In this work we report on the performance of a MISFET device realized by exploiting the peculiarities of Vanadium Pentoxide (V2O5) as insulating material between the gate metal and the hydrogenated single crystal diamond surface. As opposed to the typical oxide materials (such as Al2O3), the high electron affinity of the proposed oxide allows for the p-type charge transfer doping of the underlying diamond substrate. The comparison of the hydrogenated diamond surface with and without the V2O5 are reported jointly with the electrical performance of the optimized MISFETs and a preliminary small-signal equivalent circuit.
Colangeli, S., Verona, C., Ciccognani, W., Marinelli, M., Rinati, G., Limiti, E., et al. (2016). H-Terminated Diamond MISFETs with V2O5 as Insulator. In Proceedings of the 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (pp.1-4). IEEE [10.1109/CSICS.2016.7751046].
H-Terminated Diamond MISFETs with V2O5 as Insulator
COLANGELI, SERGIO;VERONA, CLAUDIO;CICCOGNANI, WALTER;MARINELLI, MARCO;Rinati, Gv;LIMITI, ERNESTO;
2016-01-01
Abstract
In this work we report on the performance of a MISFET device realized by exploiting the peculiarities of Vanadium Pentoxide (V2O5) as insulating material between the gate metal and the hydrogenated single crystal diamond surface. As opposed to the typical oxide materials (such as Al2O3), the high electron affinity of the proposed oxide allows for the p-type charge transfer doping of the underlying diamond substrate. The comparison of the hydrogenated diamond surface with and without the V2O5 are reported jointly with the electrical performance of the optimized MISFETs and a preliminary small-signal equivalent circuit.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
