The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
Ciccognani, W., De Dominicis, M., Ferrari, M., Limiti, E., Peroni, M., Romanini, P. (2008). High-power monolithic AlGaN/GaN HEMT switch for X-band applications. ELECTRONICS LETTERS, 44(15), 911-913 [10.1049/el:20081170].
High-power monolithic AlGaN/GaN HEMT switch for X-band applications
CICCOGNANI, WALTER;LIMITI, ERNESTO;
2008-07-01
Abstract
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.File in questo prodotto:
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