An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a new 40 nm gate length GaAs mHEMT technology under development by OMMIC. For the first time this technology is presented. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski’s approach, has been extracted for the 2 finger family devices. In order to accomplish accurate characterizations of active devices up to very high frequencies, a coplanar TRL calibration kit was specifically designed to be realized on the same substrate as the devices.

Cleriti, R., Ciccognani, W., Colangeli, S., Limiti, E., Frijlink, P., Renvoise, M. (2016). Characterization and modelling of 40 nm mHEMT process up to 110 GHz. In Proceedings of the 11th European Microwave Integrated Circuits Conference (pp.353-356). IEEE [10.1109/EuMIC.2016.7777563].

Characterization and modelling of 40 nm mHEMT process up to 110 GHz

CLERITI, RICCARDO;CICCOGNANI, WALTER;COLANGELI, SERGIO;LIMITI, ERNESTO;
2016-01-01

Abstract

An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a new 40 nm gate length GaAs mHEMT technology under development by OMMIC. For the first time this technology is presented. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski’s approach, has been extracted for the 2 finger family devices. In order to accomplish accurate characterizations of active devices up to very high frequencies, a coplanar TRL calibration kit was specifically designed to be realized on the same substrate as the devices.
11th European Microwave Integrated Circuits Conference, EuMIC 2016
London, United Kingdom
2016
Rilevanza internazionale
contributo
2016
2016
Settore ING-INF/01 - ELETTRONICA
English
40 nm mHEMT; on-wafer measurements; scalable noise model; TRL calibration realized on GaAs substrate;
40 nm mHEMT, on-wafer measurements, scalable noise model, TRL calibration realized on GaAs substrate
Intervento a convegno
Cleriti, R., Ciccognani, W., Colangeli, S., Limiti, E., Frijlink, P., Renvoise, M. (2016). Characterization and modelling of 40 nm mHEMT process up to 110 GHz. In Proceedings of the 11th European Microwave Integrated Circuits Conference (pp.353-356). IEEE [10.1109/EuMIC.2016.7777563].
Cleriti, R; Ciccognani, W; Colangeli, S; Limiti, E; Frijlink, P; Renvoise, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/180495
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