An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a new 40 nm gate length GaAs mHEMT technology under development by OMMIC. For the first time this technology is presented. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski’s approach, has been extracted for the 2 finger family devices. In order to accomplish accurate characterizations of active devices up to very high frequencies, a coplanar TRL calibration kit was specifically designed to be realized on the same substrate as the devices.
Cleriti, R., Ciccognani, W., Colangeli, S., Limiti, E., Frijlink, P., Renvoise, M. (2016). Characterization and modelling of 40 nm mHEMT process up to 110 GHz. In Proceedings of the 11th European Microwave Integrated Circuits Conference (pp.353-356). IEEE [10.1109/EuMIC.2016.7777563].
Characterization and modelling of 40 nm mHEMT process up to 110 GHz
CLERITI, RICCARDO;CICCOGNANI, WALTER;COLANGELI, SERGIO;LIMITI, ERNESTO;
2016-01-01
Abstract
An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a new 40 nm gate length GaAs mHEMT technology under development by OMMIC. For the first time this technology is presented. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski’s approach, has been extracted for the 2 finger family devices. In order to accomplish accurate characterizations of active devices up to very high frequencies, a coplanar TRL calibration kit was specifically designed to be realized on the same substrate as the devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
