We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5x1013 cm2, and a lower sheet resistance, down to 2.6 kX/sq, in comparison to the atmosphere-induced values of about 1x1013 cm2 and 10 kX/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.

Verona, C., Ciccognani, W., Colangeli, S., Limiti, E., Marinelli, M., & Verona Rinati, G. (2016). Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators. JOURNAL OF APPLIED PHYSICS, 120(2) [10.1063/1.4955469].

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

VERONA, CLAUDIO;CICCOGNANI, WALTER;COLANGELI, SERGIO;LIMITI, ERNESTO;MARINELLI, MARCO;VERONA RINATI, GIANLUCA
2016-07

Abstract

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5x1013 cm2, and a lower sheet resistance, down to 2.6 kX/sq, in comparison to the atmosphere-induced values of about 1x1013 cm2 and 10 kX/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
eng
Con Impact Factor ISI
Suface transfer doping; HYdrogen termination; Diamond Devices; DC and RF performance; High Electron Affinity; Insulators
Articolo n. 025104
Verona, C., Ciccognani, W., Colangeli, S., Limiti, E., Marinelli, M., & Verona Rinati, G. (2016). Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators. JOURNAL OF APPLIED PHYSICS, 120(2) [10.1063/1.4955469].
Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; VERONA RINATI, G
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/160108
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