In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three LNAs based on the 0.25-μm GaN HEMT process, marginally described in previous publications, is then presented. In particular, two robust and broadband 2-18-GHz monolithic microwave integrated circuit (MMIC) LNAs are designed, fabricated, and tested, exhibiting robustness to over 40-dBm input power levels; an X-band MMIC LNA, suitable for synthetic aperture radar systems, is also designed and realized, for which measurement results show a noise figure ~2.2 dB with an associated gain >25 dB and robustness up to 41-dBm input power level.

Colangeli, S., Bentini, A., Ciccognani, W., Limiti, E., Nanni, A. (2013). “GaN-based robust low noise amplifiers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(10), 3238-3248 [10.1109/TED.2013.2265718].

“GaN-based robust low noise amplifiers

COLANGELI, SERGIO;CICCOGNANI, WALTER;LIMITI, ERNESTO;
2013-01-01

Abstract

In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three LNAs based on the 0.25-μm GaN HEMT process, marginally described in previous publications, is then presented. In particular, two robust and broadband 2-18-GHz monolithic microwave integrated circuit (MMIC) LNAs are designed, fabricated, and tested, exhibiting robustness to over 40-dBm input power levels; an X-band MMIC LNA, suitable for synthetic aperture radar systems, is also designed and realized, for which measurement results show a noise figure ~2.2 dB with an associated gain >25 dB and robustness up to 41-dBm input power level.
2013
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
Colangeli, S., Bentini, A., Ciccognani, W., Limiti, E., Nanni, A. (2013). “GaN-based robust low noise amplifiers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(10), 3238-3248 [10.1109/TED.2013.2265718].
Colangeli, S; Bentini, A; Ciccognani, W; Limiti, E; Nanni, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/89797
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