This paper deals with the development of GaN-based solution for X Band T/R Module of future SAR generations. In Particular HPA and LNA MMIC solutions have been investigated and produced using a 0.25 um GaN HEMT process provided by SELEX-SI featured by a 4W/mm power density. Obtained results demonstrate promising performance both in Output Power and Noise characteristics and open the wider perspectives of medium-term GaN adoption in next generation SAR systems. The present work has been carried out in the frame of a general research and development activity sponsored by Italian Space Agency on the implementation of new technologies for next generation Spaceborn SAR.
Barigelli, A., Ciccognani, W., Colangeli, S., Colantonio, P., Feudale, M., Giannini, F., et al. (2012). Development of GaN based MMIC for next generation X-Band space SAR T/R module. In Microwave Integrated Circuits Conference (EuMIC), 2012 7th European (pp.369-372).
Development of GaN based MMIC for next generation X-Band space SAR T/R module
CICCOGNANI, WALTER;COLANGELI, SERGIO;COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;LIMITI, ERNESTO;
2012-10-01
Abstract
This paper deals with the development of GaN-based solution for X Band T/R Module of future SAR generations. In Particular HPA and LNA MMIC solutions have been investigated and produced using a 0.25 um GaN HEMT process provided by SELEX-SI featured by a 4W/mm power density. Obtained results demonstrate promising performance both in Output Power and Noise characteristics and open the wider perspectives of medium-term GaN adoption in next generation SAR systems. The present work has been carried out in the frame of a general research and development activity sponsored by Italian Space Agency on the implementation of new technologies for next generation Spaceborn SAR.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
