In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate--drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.

Verona, C., Ciccognani, W., Colangeli, S., DI PIETRANTONIO, F., Giovine, E., Limiti, E., et al. (2015). Gate-source distance scaling effects in H-terminated diamond MESFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1150-1156 [10.1109/TED.2015.2398891].

Gate-source distance scaling effects in H-terminated diamond MESFETs

VERONA, CLAUDIO;CICCOGNANI, WALTER;COLANGELI, SERGIO;DI PIETRANTONIO, FABIO;LIMITI, ERNESTO;MARINELLI, MARCO;VERONA RINATI, GIANLUCA
2015

Abstract

In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate--drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
English
Con Impact Factor ISI
Diamond films; Heterojunction bipolar transistors; MESFET devices; Single crystals; Threshold voltage Device performance; Gate-source spacing; Knee voltage; Layout optimization; Scaling effects; Single crystal diamond; Source and drains; Threshold voltage variation
Verona, C., Ciccognani, W., Colangeli, S., DI PIETRANTONIO, F., Giovine, E., Limiti, E., et al. (2015). Gate-source distance scaling effects in H-terminated diamond MESFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1150-1156 [10.1109/TED.2015.2398891].
Verona, C; Ciccognani, W; Colangeli, S; DI PIETRANTONIO, F; Giovine, E; Limiti, E; Marinelli, M; VERONA RINATI, G
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
IEEE Trans Gate-Source Distance 2015.pdf

accesso aperto

Licenza: Copyright dell'editore
Dimensione 1.33 MB
Formato Adobe PDF
1.33 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/110770
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 26
  • ???jsp.display-item.citation.isi??? 26
social impact