In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate--drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.
Verona, C., Ciccognani, W., Colangeli, S., DI PIETRANTONIO, F., Giovine, E., Limiti, E., et al. (2015). Gate-source distance scaling effects in H-terminated diamond MESFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1150-1156 [10.1109/TED.2015.2398891].
Gate-source distance scaling effects in H-terminated diamond MESFETs
VERONA, CLAUDIO;CICCOGNANI, WALTER;COLANGELI, SERGIO;DI PIETRANTONIO, FABIO;LIMITI, ERNESTO;MARINELLI, MARCO;VERONA RINATI, GIANLUCA
2015-01-01
Abstract
In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate--drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.File | Dimensione | Formato | |
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