High power microstrip GaN-HEMT switches for microwave applications

In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the XBand switch exhibits 1dB insertion loss, better than 37dB isolation and a power handling capability at 9 GHz of betterthan 39dBm at 1dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2dB, better than 25dB isolation and a power handling capability of better than 38dBm in the entire bandwidth.