In this contribution, several Multi-Functional Chips featuring different functionalities and integration levels are presented. A X-Band Core-Chip integrating a 6-bit attenuator, a 6-bit phase shifter, a T/R switch and a digital serial-to-parallel converter has been fabricated with 0.18 μm OMMIC ED02AH process. The MMIC exhibits 6 dB and 8 dB average insertion gain for transmit and receive mode respectively, full 360° phase coverage with 5.6° phase steps and 31.5 dB attenuation dynamic range with 0.5 dB amplitude resolution in less than 16 mm2. Two C-Band Multi-Functional Chips, one consisting of a bi-directional 6-bit phase shifter with on-board digital controls and the other integrating a 6-bit phase shifter, a buffer amplifier and a 5-bit attenuator have been fabricated with the 0.4 μm E/D GaAs process developed by SELEX Sistemi Integrati. The former exhibits full 360 degree phase coverage with 5.6° phase resolution in less than 18 mm2. The latter is an unidirectional MMIC featuring 8 dB average gain, full 360 degree phase coverage with 5.6° phase steps and 31 dB attenuation range with 1 dB amplitude resolution in less than 26 mm2.
Bentini, A., Ciccognani, W., Colangeli, S., Palomba, M., Palombini, D., Limiti, E. (2012). High-density Mixed Signal RF Front-End Electronics for T-R Modules. In Satellite Telecommunications (ESTEL), 2012 IEEE First AESS European Conference on. IEEE [10.1109/ESTEL.2012.6400127].
High-density Mixed Signal RF Front-End Electronics for T-R Modules
CICCOGNANI, WALTER;COLANGELI, SERGIO;LIMITI, ERNESTO
2012-01-01
Abstract
In this contribution, several Multi-Functional Chips featuring different functionalities and integration levels are presented. A X-Band Core-Chip integrating a 6-bit attenuator, a 6-bit phase shifter, a T/R switch and a digital serial-to-parallel converter has been fabricated with 0.18 μm OMMIC ED02AH process. The MMIC exhibits 6 dB and 8 dB average insertion gain for transmit and receive mode respectively, full 360° phase coverage with 5.6° phase steps and 31.5 dB attenuation dynamic range with 0.5 dB amplitude resolution in less than 16 mm2. Two C-Band Multi-Functional Chips, one consisting of a bi-directional 6-bit phase shifter with on-board digital controls and the other integrating a 6-bit phase shifter, a buffer amplifier and a 5-bit attenuator have been fabricated with the 0.4 μm E/D GaAs process developed by SELEX Sistemi Integrati. The former exhibits full 360 degree phase coverage with 5.6° phase resolution in less than 18 mm2. The latter is an unidirectional MMIC featuring 8 dB average gain, full 360 degree phase coverage with 5.6° phase steps and 31 dB attenuation range with 1 dB amplitude resolution in less than 26 mm2.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
