Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f t=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. ©2009 IEEE.
Calvani, P., Sinisi, F., Rossi, M., Conte, G., Giovine, E., Ciccognani, W., et al. (2009). MESFETs on H-terminated polycrystalline diamond. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp.257-260). IEEE [10.1109/ULIS.2009.4897585].
MESFETs on H-terminated polycrystalline diamond
CICCOGNANI, WALTER;LIMITI, ERNESTO
2009-03-01
Abstract
Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f t=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. ©2009 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
