Gallium Nitride 's superior physical properties, in comparison with other semiconductors, make GaN HEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and efficiency, high-verification of different families of high efficiency high power devices manufactured at SELEX Sistemi Integrati are reported Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.
Ciccognani, W., Giannini, F., Limiti, E., Longhi, P., Nanni, A., Serino, A., et al. (2008). GaN device technology: Manufacturing, characterization, modelling and verification. In Proceedings of the 14th Conference on Microwave Techniques, COMITE 2008 (pp.15-20). PRAHA 6 : CZECHSLOVAKIA SECTION IEEE [10.1109/COMITE.2008.4569884].
GaN device technology: Manufacturing, characterization, modelling and verification
CICCOGNANI, WALTER;GIANNINI, FRANCO;LIMITI, ERNESTO;Longhi, PE;SERINO, ANTONIO;
2008-01-01
Abstract
Gallium Nitride 's superior physical properties, in comparison with other semiconductors, make GaN HEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and efficiency, high-verification of different families of high efficiency high power devices manufactured at SELEX Sistemi Integrati are reported Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
