An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a 70 nm mHEMT technology (OMMIC's D007IH), both at ambient (300 K) and cryogenic (30 K) temperatures. For the first time, to the Authors' knowledge, the feasibility of the cold-source technique for on-wafer, cryogenic noise measurements is demonstrated. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski's approach, has been extracted for the cryo-cooled devices. Comparisons between ambient and cryogenic operation are provided and discussed.
Cleriti, R., Colangeli, S., Ciccognani, W., Palomba, M., Limiti, E. (2015). Cold-source cryogenic characterization and modeling of a mHEMT process. In Proceedings of the 10th European Microwave Integrated Circuits Conference (pp.41-44). IEEE [10.1109/EuMIC.2015.7345063].
Cold-source cryogenic characterization and modeling of a mHEMT process
CLERITI, RICCARDO;COLANGELI, SERGIO;CICCOGNANI, WALTER;PALOMBA, MIRKO;LIMITI, ERNESTO
2015-01-01
Abstract
An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a 70 nm mHEMT technology (OMMIC's D007IH), both at ambient (300 K) and cryogenic (30 K) temperatures. For the first time, to the Authors' knowledge, the feasibility of the cold-source technique for on-wafer, cryogenic noise measurements is demonstrated. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski's approach, has been extracted for the cryo-cooled devices. Comparisons between ambient and cryogenic operation are provided and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
