A method for determining the noise parameters of high frequency field-effect transistors is presented. It has been developed by expressing the chain correlation matrix of the device as a function of its H-parameters and two frequency-dependent equivalent noise temperatures. The noise temperatures are determined utilizing the H-parameters and the 50 Omega noise figure of the device measured at a number of frequency points. The extraction of the small-signal equivalent circuit model of the device is therefore not required. A good agreement with the results of a well-established method is demonstrated in a wide range of frequencies.
Ciccognani, W., Giannini, F., Limiti, E., Nanni, A., Serino, A., Lanzieri, C., et al. (2007). Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures. In 2007 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, VOLS 1 AND 2 (pp.856-860). NEW YORK : IEEE [10.1109/IMOC.2007.4404392].
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures
CICCOGNANI, WALTER;GIANNINI, FRANCO;LIMITI, ERNESTO;SERINO, ANTONIO;
2007-01-01
Abstract
A method for determining the noise parameters of high frequency field-effect transistors is presented. It has been developed by expressing the chain correlation matrix of the device as a function of its H-parameters and two frequency-dependent equivalent noise temperatures. The noise temperatures are determined utilizing the H-parameters and the 50 Omega noise figure of the device measured at a number of frequency points. The extraction of the small-signal equivalent circuit model of the device is therefore not required. A good agreement with the results of a well-established method is demonstrated in a wide range of frequencies.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
