We report for the first time on the dc and RF performance of novel MISFETs fabricated on hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V2O5) as insulating material. The active devices were characterized in terms of static I-V characteristics and static transconductance as well as of S-parameters for the calculation of the maximum cutoff frequency and the maximum oscillation frequency. Time stability of the drain current was evaluated overnight observing a maximum fluctuation of 7%. Investigations on temperature dependence of diamond-based MISFET were also performed up to 130 degrees C. The experimental results were compared with the better established diamond MESFET technology. Finally, the surface transfer doping of H-terminated diamond by very thin V2O5 insulator was also investigated in terms of conductivity, stability in air, and resistance to high temperatures.

Verona, C., Ciccognani, W., Colangeli, S., Limiti, E., Marinelli, M., VERONA RINATI, G., et al. (2016). V2O5 MISFETs on H-Terminated Diamond. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(12), 4647-4653 [10.1109/TED.2016.2617362].

V2O5 MISFETs on H-Terminated Diamond

VERONA, CLAUDIO;CICCOGNANI, WALTER;COLANGELI, SERGIO;LIMITI, ERNESTO;MARINELLI, MARCO;VERONA RINATI, GIANLUCA;CANNATA', DOMENICO;BENETTI, MASSIMILIANO;DI PIETRANTONIO, FABIO
2016

Abstract

We report for the first time on the dc and RF performance of novel MISFETs fabricated on hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V2O5) as insulating material. The active devices were characterized in terms of static I-V characteristics and static transconductance as well as of S-parameters for the calculation of the maximum cutoff frequency and the maximum oscillation frequency. Time stability of the drain current was evaluated overnight observing a maximum fluctuation of 7%. Investigations on temperature dependence of diamond-based MISFET were also performed up to 130 degrees C. The experimental results were compared with the better established diamond MESFET technology. Finally, the surface transfer doping of H-terminated diamond by very thin V2O5 insulator was also investigated in terms of conductivity, stability in air, and resistance to high temperatures.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - Fisica Sperimentale
English
Hydrogenated diamond; MISFET; surface transfer doping; temperature; vanadium pentoxide
Verona, C., Ciccognani, W., Colangeli, S., Limiti, E., Marinelli, M., VERONA RINATI, G., et al. (2016). V2O5 MISFETs on H-Terminated Diamond. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(12), 4647-4653 [10.1109/TED.2016.2617362].
Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; VERONA RINATI, G; Cannata', D; Benetti, M; DI PIETRANTONIO, F
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/173202
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 27
  • ???jsp.display-item.citation.isi??? 27
social impact