We report for the first time on the dc and RF performance of novel MISFETs fabricated on hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V2O5) as insulating material. The active devices were characterized in terms of static I-V characteristics and static transconductance as well as of S-parameters for the calculation of the maximum cutoff frequency and the maximum oscillation frequency. Time stability of the drain current was evaluated overnight observing a maximum fluctuation of 7%. Investigations on temperature dependence of diamond-based MISFET were also performed up to 130 degrees C. The experimental results were compared with the better established diamond MESFET technology. Finally, the surface transfer doping of H-terminated diamond by very thin V2O5 insulator was also investigated in terms of conductivity, stability in air, and resistance to high temperatures.
Verona, C., Ciccognani, W., Colangeli, S., Limiti, E., Marinelli, M., Verona-Rinati, G., et al. (2016). V2O5 MISFETs on H-Terminated Diamond. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(12), 4647-4653.
|Tipologia:||Articolo su rivista|
|Citazione:||Verona, C., Ciccognani, W., Colangeli, S., Limiti, E., Marinelli, M., Verona-Rinati, G., et al. (2016). V2O5 MISFETs on H-Terminated Diamond. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(12), 4647-4653.|
|Settore Scientifico Disciplinare:||Settore FIS/01 - Fisica Sperimentale|
|Revisione (peer review):||Esperti anonimi|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/TED.2016.2617362|
|Stato di pubblicazione:||Pubblicato|
|Data di pubblicazione:||2016|
|Titolo:||V2O5 MISFETs on H-Terminated Diamond|
|Autori:||Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; Verona-Rinati, G; Cannata, D; Benetti, M; Di Pietrantonio, F|
|Appare nelle tipologie:||01 - Articolo su rivista|