In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-of-the-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers and T/R switches on the same GaN monolithic process will bring to the next generation of fully-integrated T/R module front-end MMICs. © 2014 IAMOT.
Limiti, E., Colangeli, S., Bentini, A., Ciccognani, W. (2014). Robust GaN MMIC Chipset for T/R Module Front-End Integration. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 9(1), 6-12.
Robust GaN MMIC Chipset for T/R Module Front-End Integration
LIMITI, ERNESTO;COLANGELI, SERGIO;CICCOGNANI, WALTER
2014-01-01
Abstract
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-of-the-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers and T/R switches on the same GaN monolithic process will bring to the next generation of fully-integrated T/R module front-end MMICs. © 2014 IAMOT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
