In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NF min=0.87dB, G ASS=10.5dB @ 10GHz) have been measured with an L G=250nm device without FP, while with the additional FP protection a minimum NF min=1.5dB and G ASS=13.5dB have been reached. © 2011 EUROPEAN MICROWAVE ASSOC.
Peroni, M., Nanni, A., Romanin, P., Dominijanni, D., Notargiacomo, A., Giovine, E., et al. (2011). Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology. In European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 (pp.344-347). IEEE.
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology
NANNI, ANTONIO;CICCOGNANI, WALTER;COLANGELI, SERGIO
2011-01-01
Abstract
In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NF min=0.87dB, G ASS=10.5dB @ 10GHz) have been measured with an L G=250nm device without FP, while with the additional FP protection a minimum NF min=1.5dB and G ASS=13.5dB have been reached. © 2011 EUROPEAN MICROWAVE ASSOC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
