IRIS
COLANGELI, SERGIO
 Distribuzione geografica
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Continente #
NA - Nord America 33.634
EU - Europa 2.403
AS - Asia 1.728
Continente sconosciuto - Info sul continente non disponibili 17
SA - Sud America 10
OC - Oceania 6
AF - Africa 4
Totale 37.802
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Nazione #
US - Stati Uniti d'America 33.620
CN - Cina 724
SG - Singapore 670
IT - Italia 457
IE - Irlanda 435
UA - Ucraina 348
RU - Federazione Russa 253
DE - Germania 246
KR - Corea 205
SE - Svezia 163
FR - Francia 115
GB - Regno Unito 106
FI - Finlandia 94
PL - Polonia 70
IN - India 46
NL - Olanda 27
CZ - Repubblica Ceca 26
ES - Italia 25
JP - Giappone 20
TR - Turchia 14
BE - Belgio 13
CA - Canada 13
EU - Europa 13
IR - Iran 7
BR - Brasile 6
CH - Svizzera 6
RO - Romania 6
VN - Vietnam 6
AU - Australia 5
HK - Hong Kong 5
IL - Israele 5
TW - Taiwan 5
A2 - ???statistics.table.value.countryCode.A2??? 3
AT - Austria 3
BG - Bulgaria 3
IQ - Iraq 3
MY - Malesia 3
NO - Norvegia 3
TH - Thailandia 3
BD - Bangladesh 2
CL - Cile 2
ID - Indonesia 2
LK - Sri Lanka 2
BH - Bahrain 1
DM - Dominica 1
EC - Ecuador 1
HR - Croazia 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LU - Lussemburgo 1
LV - Lettonia 1
MA - Marocco 1
MD - Moldavia 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PE - Perù 1
SA - Arabia Saudita 1
SD - Sudan 1
SO - Somalia 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZA - Sudafrica 1
Totale 37.802
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Città #
Wilmington 10.301
Houston 9.172
Woodbridge 7.503
Fairfield 1.024
Chandler 826
Ann Arbor 694
Singapore 608
Ashburn 467
Seattle 426
Dublin 404
Cambridge 343
Medford 289
Dearborn 262
Jacksonville 247
Beijing 234
Rome 224
Zhengzhou 205
Santa Clara 151
New York 140
Lawrence 135
Menlo Park 88
Moscow 72
San Diego 67
Kraków 64
Nanjing 46
Shanghai 42
Redwood City 29
Cedarhurst 25
Helsinki 23
Seoul 22
Kunming 21
London 21
Norwalk 21
Hangzhou 20
Hefei 20
Boardman 17
Torrejón de Ardoz 17
Milan 16
Mountain View 16
Falls Church 14
Amsterdam 13
Brussels 13
Los Angeles 13
Creede 11
Nuremberg 11
Toronto 11
Verona 11
Guangzhou 10
Jinan 10
Mülheim 10
Bologna 9
Brno 9
Chengdu 9
Engelhard 9
Monte Vista 9
Paris 9
Fuzhou 8
Glasgow 8
Hebei 8
Saint Petersburg 8
Ankara 7
Hanover 6
Lappeenranta 6
Munich 6
Nanchang 6
Osimo 6
University Park 6
Atlanta 5
Capri 5
Chicago 5
Chiswick 5
Colorado Springs 5
Cottbus 5
Indiana 5
Jiaxing 5
Kendall Park 5
Ladispoli 5
Marano Di Napoli 5
Shenzhen 5
Tsukuba 5
Turin 5
Wuhan 5
Xian 5
Berlin 4
Del Norte 4
Hounslow 4
Latina 4
Nepi 4
Passirano 4
Sabaudia 4
Sacramento 4
Salt Lake City 4
San Francisco 4
Shenyang 4
Tokyo 4
Zagarolo 4
Center 3
Chongqing 3
Council Bluffs 3
Dong Ket 3
Totale 34.702
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Nome #
Millimeter wave low noise amplifier for satellite and radio astronomy applications 455
V2O5 MISFETs on H-Terminated Diamond 448
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 438
H-Terminated Diamond MISFETs with V2O5 as Insulator 431
T/R modules front-end integration in GaN technology 430
Constant mismatch circles and application to low noise microwave amplifier design 428
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 427
High power-handling GaN switch for S-band applications 426
Development of GaN based MMIC for next generation X-Band space SAR T/R module 423
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 421
GaN-on-silicon evaluation for high-power MMIC applications 417
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 417
Black-box noise modeling of GaAs HEMTs under illumination 416
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 416
Closed-form noise parameters of a transmission line under thermal gradients 410
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 403
Robust GaN Successive-Detection Logarithmic Video-Amplifier for EW applications 401
Robust GaN MMIC chipset for T/R module front-end integration 399
Polynomial noise modeling of Silicon based GaN HEMTs 399
Characterization and modeling of low-cost, high-performance GaN/Si technology 392
Realization and measurement of an RF energy harvesting circuit working on LTE frequency bands 392
Broadband Nonreciprocal Phase Shifter Design Technique 392
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 392
Robust GaN MMIC Chipset for T/R Module Front-End Integration 388
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 385
Gate-source distance scaling effects in H-terminated diamond MESFETs 381
Fabrication and Performance of Microwave Diamond Devices for Space Applications 380
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 380
Highly reliable characterization approaches oriented to active device noise modeling 378
Evaluation of coaxial cable performance under thermal gradients 374
Design Procedure for Compact Asymmetric SPDT Switches and Full X-Band Demonstrator 373
Cold-source cryogenic characterization and modeling of a mHEMT process 370
Robust LNA in GaN Technology 365
RF Energy Harvesting for DVB-T Signals 365
An active dispersive delay line in GaN MMIC technology for X-band applications 363
Broadband resistive-inductive compensated GaN-HEMT single-FET switch 362
Design and implementation of ambient RF energy harvesting circuits 361
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 360
Novel broadband nonreciprocal 180° phase-shifter 357
“GaN-based robust low noise amplifiers 356
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 353
MMIC Millimeter-Wave Front-End Electronics 352
A Measurement-Based Approach to Model Scaling Properties of FETs 351
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 349
Distributed active balun with improved linearity performance 349
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 349
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 348
High-density Mixed Signal RF Front-End Electronics for T-R Modules 345
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 343
Design and Implementation of Ambient RF Energy Harvesting Circuits 341
High performance X-band LNAs using a 0.25 μm GaN technology 341
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 334
Highly reliable characterization approaches oriented to active device noise modeling 333
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs 333
Tunable Active Inductors for High-Frequency Applications 331
Automated Determination of Device Noise Parameters Using Multi-Frequency, Source- Pull Data 330
Design procedure for compact asymmetric SPDT switches and full X-band demonstrator 329
Towards the Realization of a Single-Chip Front-End in GaN Technology 328
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 327
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 321
BPSK modulator for 2-18 GHz Vector Modulator 318
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 317
A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA 317
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 314
Resistive bias network for optimized isolation in SPDT switches 312
EM isolation enhancement based on metamaterial concept in antenna array system to support full-duplex application 311
A GaAs MMIC active inductor for notch filtering up to K-band 310
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 308
Characterization and modelling of high-frequency active devices oriented to high-sensitivity subsystem design 307
Active and Passive Device Characterization and Modeling for low-cost and High Volume GaN-on-Si Technology 298
An active low-noise termination in GaN technology 293
Small-signal and noise performance of 0.5 μm diamond MESFETs 290
A high-performance C-band integrated front-end in AlGaN/GaN technology 283
High level of automated process for broadband and X-band MMIC's production 279
D-band LNA using a 40-nm GaAs mHEMT technology 275
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 274
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 265
A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach 259
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator 259
Investigation of microwave devices using diamond as a semiconductor material 256
An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency 255
A GaN single chip front-end for C-band synthetic aperture radars 251
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 250
Medium power X-Band LNA in 0.25 µm GaN technology 245
Algorithmic Test of the Unconditional Stability of Three-Port Networks 234
On the Optimum Noise-Gain Locus of Two-Ports 233
Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers 224
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 218
High power-handling SPDT switch in 0.25-μm GaN technology 216
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 215
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density 215
Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology 213
Hydrogen terminated diamond V2O5-based MISFETs 207
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 206
A multi-finger modeling approach to correctly predict the inherent stability of a custom active device 201
GaN-based single-chip front-ends for radar systems 199
A GaN Single-Chip Front-End for Active Electronically Scanned Arrays 199
Improved microwave attenuator topology minimizing the number of control voltages 198
MiGaNSOS: Millimetre wave Gallium Nitride Space evaluation and application to Observation Satellites 197
Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications 196
Totale 32.875
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Categoria #
all - tutte 83.716
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 83.716
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20207.704 0 0 0 0 931 1.207 1.044 1.015 1.006 960 764 777
2020/20217.066 684 854 820 916 756 894 852 677 139 208 193 73
2021/20221.518 74 162 47 77 74 106 67 67 150 130 107 457
2022/20232.028 239 215 79 218 171 465 154 154 189 17 67 60
2023/2024739 81 41 51 36 76 183 46 27 12 44 35 107
2024/20251.443 120 738 353 202 30 0 0 0 0 0 0 0
Totale 38.548