IRIS
COLANGELI, SERGIO
 Distribuzione geografica
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Continente #
NA - Nord America 37.692
AS - Asia 5.676
EU - Europa 3.870
SA - Sud America 714
AF - Africa 78
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 10
Totale 48.059
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Nazione #
US - Stati Uniti d'America 37.492
SG - Singapore 2.334
CN - Cina 1.444
IT - Italia 851
RU - Federazione Russa 626
BR - Brasile 605
IE - Irlanda 438
VN - Vietnam 410
HK - Hong Kong 401
UA - Ucraina 368
DE - Germania 327
FR - Francia 299
GB - Regno Unito 231
JP - Giappone 231
KR - Corea 209
SE - Svezia 184
BD - Bangladesh 174
IN - India 149
FI - Finlandia 139
PL - Polonia 113
CA - Canada 110
NL - Olanda 93
ES - Italia 63
MX - Messico 54
AR - Argentina 50
TW - Taiwan 48
TR - Turchia 43
ID - Indonesia 38
ZA - Sudafrica 34
IQ - Iraq 32
CZ - Repubblica Ceca 31
EC - Ecuador 19
AE - Emirati Arabi Uniti 17
AT - Austria 17
OM - Oman 17
PK - Pakistan 17
SA - Arabia Saudita 14
BE - Belgio 13
CH - Svizzera 13
EU - Europa 13
MA - Marocco 13
RO - Romania 13
CO - Colombia 12
UZ - Uzbekistan 12
IL - Israele 10
AU - Australia 9
IR - Iran 9
JM - Giamaica 9
JO - Giordania 9
LT - Lituania 9
NP - Nepal 9
CL - Cile 8
MY - Malesia 8
PH - Filippine 8
VE - Venezuela 8
TN - Tunisia 7
DO - Repubblica Dominicana 5
DZ - Algeria 5
EG - Egitto 5
KE - Kenya 5
LB - Libano 5
NI - Nicaragua 5
PE - Perù 5
TH - Thailandia 5
AZ - Azerbaigian 4
GR - Grecia 4
MD - Moldavia 4
MT - Malta 4
PA - Panama 4
PY - Paraguay 4
TT - Trinidad e Tobago 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AO - Angola 3
BG - Bulgaria 3
BH - Bahrain 3
BY - Bielorussia 3
CR - Costa Rica 3
HU - Ungheria 3
KG - Kirghizistan 3
KZ - Kazakistan 3
LV - Lettonia 3
NO - Norvegia 3
RS - Serbia 3
XK - ???statistics.table.value.countryCode.XK??? 3
AL - Albania 2
HN - Honduras 2
HR - Croazia 2
LK - Sri Lanka 2
MN - Mongolia 2
PS - Palestinian Territory 2
PT - Portogallo 2
SI - Slovenia 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
UY - Uruguay 2
BN - Brunei Darussalam 1
BO - Bolivia 1
BS - Bahamas 1
CD - Congo 1
CY - Cipro 1
Totale 48.048
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Città #
Wilmington 10.328
Houston 9.189
Woodbridge 7.504
Singapore 1.217
Fairfield 1.024
Chandler 826
Ashburn 817
San Jose 759
Ann Arbor 694
Beijing 552
Seattle 436
Dublin 407
Hong Kong 394
Cambridge 344
Rome 342
Los Angeles 293
Medford 290
Chicago 263
Dearborn 262
New York 257
Jacksonville 248
Zhengzhou 206
Tokyo 205
Santa Clara 181
The Dalles 180
Lawrence 135
Salt Lake City 130
Ho Chi Minh City 123
Lauterbourg 121
Moscow 121
Buffalo 103
Hanoi 103
Menlo Park 88
Council Bluffs 86
Dallas 81
Elk Grove Village 68
San Diego 67
Kraków 64
São Paulo 64
Tampa 63
Nanjing 61
Orem 57
Redondo Beach 52
Helsinki 51
London 51
Shanghai 51
Amsterdam 42
Milan 39
Montreal 37
Warsaw 37
Sterling 35
Miami 33
Munich 33
Toronto 33
Chennai 31
Denver 29
Frankfurt am Main 29
Redwood City 29
Brooklyn 28
Cedarhurst 25
Taipei 25
Hangzhou 24
Phoenix 24
Poplar 24
Atlanta 23
Naples 23
Stockholm 23
Chongqing 22
Norwalk 22
Seoul 22
Grottaferrata 21
Johannesburg 21
Kunming 21
Lancaster 21
Suzhou 21
Hefei 20
Boardman 19
Nuremberg 19
Jakarta 18
San Francisco 18
Boston 17
Manchester 17
Paris 17
Torrejón de Ardoz 17
Da Nang 16
Mountain View 16
Ankara 15
Dulles 15
Guangzhou 15
Lappeenranta 15
Mexico City 15
Monte Vista 15
Muscat 15
Alamosa 14
Belo Horizonte 14
Falls Church 14
Haiphong 14
Mumbai 14
Yunlin 14
Brussels 13
Totale 40.151
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Nome #
V2O5 MISFETs on H-Terminated Diamond 504
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 489
High power-handling GaN switch for S-band applications 489
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 489
Millimeter wave low noise amplifier for satellite and radio astronomy applications 487
T/R modules front-end integration in GaN technology 485
Development of GaN based MMIC for next generation X-Band space SAR T/R module 475
H-Terminated Diamond MISFETs with V2O5 as Insulator 475
Constant mismatch circles and application to low noise microwave amplifier design 467
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 463
Gate-source distance scaling effects in H-terminated diamond MESFETs 462
Closed-form noise parameters of a transmission line under thermal gradients 461
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 455
Polynomial noise modeling of Silicon based GaN HEMTs 451
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 451
GaN-on-silicon evaluation for high-power MMIC applications 450
Black-box noise modeling of GaAs HEMTs under illumination 448
Robust GaN Successive-Detection Logarithmic Video-Amplifier for EW applications 441
Realization and measurement of an RF energy harvesting circuit working on LTE frequency bands 439
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 439
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 436
Broadband Nonreciprocal Phase Shifter Design Technique 434
Robust GaN MMIC chipset for T/R module front-end integration 431
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 430
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 426
Characterization and modeling of low-cost, high-performance GaN/Si technology 425
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 423
Robust GaN MMIC Chipset for T/R Module Front-End Integration 420
Fabrication and Performance of Microwave Diamond Devices for Space Applications 413
An active dispersive delay line in GaN MMIC technology for X-band applications 411
Cold-source cryogenic characterization and modeling of a mHEMT process 411
Highly reliable characterization approaches oriented to active device noise modeling 409
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 409
Evaluation of coaxial cable performance under thermal gradients 408
Source/load-pull noise measurements at ka band 408
Towards the Realization of a Single-Chip Front-End in GaN Technology 407
Robust LNA in GaN Technology 403
Design and implementation of ambient RF energy harvesting circuits 402
A Measurement-Based Approach to Model Scaling Properties of FETs 402
Design Procedure for Compact Asymmetric SPDT Switches and Full X-Band Demonstrator 401
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 400
RF Energy Harvesting for DVB-T Signals 399
Broadband resistive-inductive compensated GaN-HEMT single-FET switch 398
Novel broadband nonreciprocal 180° phase-shifter 398
“GaN-based robust low noise amplifiers 397
Distributed active balun with improved linearity performance 397
High-density Mixed Signal RF Front-End Electronics for T-R Modules 389
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 389
Design and Implementation of Ambient RF Energy Harvesting Circuits 388
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 387
High performance X-band LNAs using a 0.25 μm GaN technology 387
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 387
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 386
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 386
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 384
A multi-finger modeling approach to correctly predict the inherent stability of a custom active device 383
MMIC Millimeter-Wave Front-End Electronics 382
Tunable Active Inductors for High-Frequency Applications 379
A GaAs MMIC active inductor for notch filtering up to K-band 375
BPSK modulator for 2-18 GHz Vector Modulator 374
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 374
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 370
Highly reliable characterization approaches oriented to active device noise modeling 369
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs 369
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 367
Automated Determination of Device Noise Parameters Using Multi-Frequency, Source- Pull Data 362
Design procedure for compact asymmetric SPDT switches and full X-band demonstrator 362
Partitioned Ohtomo stability test for efficient analysis of large-signal solutions 361
A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA 359
EM isolation enhancement based on metamaterial concept in antenna array system to support full-duplex application 357
Resistive bias network for optimized isolation in SPDT switches 355
Characterization and modelling of high-frequency active devices oriented to high-sensitivity subsystem design 353
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 345
A high-performance C-band integrated front-end in AlGaN/GaN technology 342
D-band LNA using a 40-nm GaAs mHEMT technology 337
An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency 337
An active low-noise termination in GaN technology 335
Active and Passive Device Characterization and Modeling for low-cost and High Volume GaN-on-Si Technology 333
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 332
Small-signal and noise performance of 0.5 μm diamond MESFETs 326
A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach 325
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator 320
Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications 316
A GaN single chip front-end for C-band synthetic aperture radars 313
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 312
High level of automated process for broadband and X-band MMIC's production 310
Medium power X-Band LNA in 0.25 µm GaN technology 310
Investigation of microwave devices using diamond as a semiconductor material 295
Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers 265
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 263
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 263
Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications 262
Improved microwave attenuator topology minimizing the number of control voltages 262
On the Optimum Noise-Gain Locus of Two-Ports 261
Algorithmic Test of the Unconditional Stability of Three-Port Networks 261
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 260
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density 260
High power-handling SPDT switch in 0.25-μm GaN technology 258
GaN-based single-chip front-ends for radar systems 255
Hydrogen terminated diamond V2O5-based MISFETs 253
Totale 38.063
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Categoria #
all - tutte 121.393
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 121.393
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.518 74 162 47 77 74 106 67 67 150 130 107 457
2022/20232.028 239 215 79 218 171 465 154 154 189 17 67 60
2023/2024739 81 41 51 36 76 183 46 27 12 44 35 107
2024/20254.620 120 738 353 202 39 239 275 162 233 357 870 1.032
2025/20267.108 502 339 740 620 785 190 787 895 786 701 367 396
2026/202748 48 0 0 0 0 0 0 0 0 0 0 0
Totale 48.881