IRIS
COLANGELI, SERGIO
 Distribuzione geografica
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Continente #
NA - Nord America 33.087
EU - Europa 2.080
AS - Asia 1.038
Continente sconosciuto - Info sul continente non disponibili 17
SA - Sud America 9
AF - Africa 4
OC - Oceania 3
Totale 36.238
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Nazione #
US - Stati Uniti d'America 33.074
CN - Cina 709
IE - Irlanda 435
IT - Italia 423
UA - Ucraina 347
DE - Germania 229
KR - Corea 205
SE - Svezia 163
FR - Francia 114
GB - Regno Unito 103
FI - Finlandia 86
PL - Polonia 70
IN - India 43
RU - Federazione Russa 24
ES - Italia 20
JP - Giappone 20
NL - Olanda 17
CZ - Repubblica Ceca 16
TR - Turchia 14
BE - Belgio 13
EU - Europa 13
CA - Canada 12
IR - Iran 7
RO - Romania 6
BR - Brasile 5
CH - Svizzera 5
IL - Israele 5
VN - Vietnam 5
TW - Taiwan 4
A2 - ???statistics.table.value.countryCode.A2??? 3
IQ - Iraq 3
MY - Malesia 3
NO - Norvegia 3
SG - Singapore 3
TH - Thailandia 3
AU - Australia 2
BD - Bangladesh 2
BG - Bulgaria 2
CL - Cile 2
HK - Hong Kong 2
ID - Indonesia 2
LK - Sri Lanka 2
AT - Austria 1
BH - Bahrain 1
DM - Dominica 1
EC - Ecuador 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LU - Lussemburgo 1
LV - Lettonia 1
MA - Marocco 1
MD - Moldavia 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PE - Perù 1
SA - Arabia Saudita 1
SD - Sudan 1
SO - Somalia 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZA - Sudafrica 1
Totale 36.238
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Città #
Wilmington 10.301
Houston 9.172
Woodbridge 7.503
Fairfield 1.024
Chandler 826
Ann Arbor 694
Ashburn 453
Seattle 426
Dublin 404
Cambridge 343
Medford 289
Dearborn 262
Jacksonville 247
Beijing 234
Rome 213
Zhengzhou 205
New York 140
Lawrence 135
Menlo Park 88
San Diego 67
Kraków 64
Nanjing 46
Shanghai 42
Redwood City 29
Cedarhurst 25
Seoul 22
Kunming 21
London 21
Norwalk 21
Hangzhou 20
Hefei 20
Helsinki 17
Torrejón de Ardoz 17
Mountain View 16
Boardman 15
Falls Church 14
Milan 14
Brussels 13
Creede 11
Verona 11
Guangzhou 10
Jinan 10
Mülheim 10
Toronto 10
Bologna 9
Chengdu 9
Engelhard 9
Monte Vista 9
Paris 9
Fuzhou 8
Glasgow 8
Hebei 8
Saint Petersburg 8
Ankara 7
Amsterdam 6
Hanover 6
Nanchang 6
Osimo 6
University Park 6
Atlanta 5
Capri 5
Chicago 5
Chiswick 5
Colorado Springs 5
Cottbus 5
Indiana 5
Kendall Park 5
Ladispoli 5
Los Angeles 5
Marano Di Napoli 5
Moscow 5
Santa Clara 5
Shenzhen 5
Tsukuba 5
Turin 5
Wuhan 5
Xian 5
Berlin 4
Hounslow 4
Lappeenranta 4
Latina 4
Nepi 4
Sabaudia 4
Sacramento 4
Shenyang 4
Tokyo 4
Zagarolo 4
Center 3
Chongqing 3
Dong Ket 3
Gangnam-gu 3
Gothenburg 3
Guidonia 3
Kilburn 3
Kuala Lumpur 3
Manitou Springs 3
Nuremberg 3
Phoenix 3
San Francisco 3
St. George 3
Totale 33.808
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Nome #
V2O5 MISFETs on H-Terminated Diamond 440
Millimeter wave low noise amplifier for satellite and radio astronomy applications 439
T/R modules front-end integration in GaN technology 425
H-Terminated Diamond MISFETs with V2O5 as Insulator 423
High power-handling GaN switch for S-band applications 422
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 419
Constant mismatch circles and application to low noise microwave amplifier design 413
Black-box noise modeling of GaAs HEMTs under illumination 412
GaN-on-silicon evaluation for high-power MMIC applications 409
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 408
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 407
Closed-form noise parameters of a transmission line under thermal gradients 403
Development of GaN based MMIC for next generation X-Band space SAR T/R module 402
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 398
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 398
Robust GaN Successive-Detection Logarithmic Video-Amplifier for EW applications 396
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 395
Robust GaN MMIC chipset for T/R module front-end integration 390
Realization and measurement of an RF energy harvesting circuit working on LTE frequency bands 388
Broadband Nonreciprocal Phase Shifter Design Technique 387
Characterization and modeling of low-cost, high-performance GaN/Si technology 386
Polynomial noise modeling of Silicon based GaN HEMTs 384
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 384
Robust GaN MMIC Chipset for T/R Module Front-End Integration 378
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 377
Gate-source distance scaling effects in H-terminated diamond MESFETs 376
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 370
Design Procedure for Compact Asymmetric SPDT Switches and Full X-Band Demonstrator 369
Highly reliable characterization approaches oriented to active device noise modeling 368
Evaluation of coaxial cable performance under thermal gradients 364
RF Energy Harvesting for DVB-T Signals 360
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 355
Fabrication and Performance of Microwave Diamond Devices for Space Applications 355
Design and implementation of ambient RF energy harvesting circuits 354
An active dispersive delay line in GaN MMIC technology for X-band applications 352
Cold-source cryogenic characterization and modeling of a mHEMT process 352
Broadband resistive-inductive compensated GaN-HEMT single-FET switch 348
“GaN-based robust low noise amplifiers 347
Robust LNA in GaN Technology 347
MMIC Millimeter-Wave Front-End Electronics 346
A Measurement-Based Approach to Model Scaling Properties of FETs 346
Novel broadband nonreciprocal 180° phase-shifter 345
Distributed active balun with improved linearity performance 345
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 344
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 343
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 341
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 340
High-density Mixed Signal RF Front-End Electronics for T-R Modules 338
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 338
High performance X-band LNAs using a 0.25 μm GaN technology 333
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs 325
Tunable Active Inductors for High-Frequency Applications 324
Design and Implementation of Ambient RF Energy Harvesting Circuits 323
Highly reliable characterization approaches oriented to active device noise modeling 319
Towards the Realization of a Single-Chip Front-End in GaN Technology 319
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 319
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 318
Automated Determination of Device Noise Parameters Using Multi-Frequency, Source- Pull Data 317
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 313
A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA 313
Design procedure for compact asymmetric SPDT switches and full X-band demonstrator 311
BPSK modulator for 2-18 GHz Vector Modulator 308
EM isolation enhancement based on metamaterial concept in antenna array system to support full-duplex application 308
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 307
Resistive bias network for optimized isolation in SPDT switches 306
Characterization and modelling of high-frequency active devices oriented to high-sensitivity subsystem design 302
A GaAs MMIC active inductor for notch filtering up to K-band 300
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 299
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 294
Active and Passive Device Characterization and Modeling for low-cost and High Volume GaN-on-Si Technology 289
An active low-noise termination in GaN technology 289
High level of automated process for broadband and X-band MMIC's production 270
Small-signal and noise performance of 0.5 μm diamond MESFETs 269
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 266
A high-performance C-band integrated front-end in AlGaN/GaN technology 265
D-band LNA using a 40-nm GaAs mHEMT technology 258
A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach 253
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator 247
Investigation of microwave devices using diamond as a semiconductor material 245
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 243
A GaN single chip front-end for C-band synthetic aperture radars 237
An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency 236
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 233
Medium power X-Band LNA in 0.25 µm GaN technology 230
Algorithmic Test of the Unconditional Stability of Three-Port Networks 228
On the Optimum Noise-Gain Locus of Two-Ports 226
Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers 218
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 214
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 208
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density 207
High power-handling SPDT switch in 0.25-μm GaN technology 205
Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology 204
Hydrogen terminated diamond V2O5-based MISFETs 201
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 195
MiGaNSOS: Millimetre wave Gallium Nitride Space evaluation and application to Observation Satellites 192
A GaN Single-Chip Front-End for Active Electronically Scanned Arrays 192
Improved microwave attenuator topology minimizing the number of control voltages 192
A multi-finger modeling approach to correctly predict the inherent stability of a custom active device 191
GaN-based single-chip front-ends for radar systems 190
Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications 190
Totale 31.867
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Categoria #
all - tutte 71.166
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 71.166
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.989 0 0 0 0 0 0 0 0 0 0 851 1.138
2019/202011.522 938 991 800 1.089 931 1.207 1.044 1.015 1.006 960 764 777
2020/20217.066 684 854 820 916 756 894 852 677 139 208 193 73
2021/20221.518 74 162 47 77 74 106 67 67 150 130 107 457
2022/20232.028 239 215 79 218 171 465 154 154 189 17 67 60
2023/2024597 81 41 51 36 76 183 46 27 12 44 0 0
Totale 36.963