IRIS
COLANGELI, SERGIO
 Distribuzione geografica
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Continente #
NA - Nord America 37.284
AS - Asia 5.484
EU - Europa 3.751
SA - Sud America 709
AF - Africa 78
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 10
Totale 47.335
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Nazione #
US - Stati Uniti d'America 37.106
SG - Singapore 2.326
CN - Cina 1.421
IT - Italia 748
RU - Federazione Russa 625
BR - Brasile 601
IE - Irlanda 438
VN - Vietnam 403
HK - Hong Kong 400
UA - Ucraina 367
DE - Germania 327
FR - Francia 296
GB - Regno Unito 230
JP - Giappone 225
KR - Corea 208
SE - Svezia 184
IN - India 148
FI - Finlandia 139
PL - Polonia 112
CA - Canada 95
NL - Olanda 88
ES - Italia 62
MX - Messico 54
AR - Argentina 50
TW - Taiwan 47
BD - Bangladesh 42
TR - Turchia 41
ID - Indonesia 35
ZA - Sudafrica 34
IQ - Iraq 32
CZ - Repubblica Ceca 31
EC - Ecuador 19
AT - Austria 17
OM - Oman 17
PK - Pakistan 16
AE - Emirati Arabi Uniti 15
BE - Belgio 13
CH - Svizzera 13
EU - Europa 13
MA - Marocco 13
RO - Romania 13
SA - Arabia Saudita 13
CO - Colombia 12
UZ - Uzbekistan 12
IL - Israele 10
AU - Australia 9
IR - Iran 9
JO - Giordania 9
LT - Lituania 9
NP - Nepal 9
VE - Venezuela 8
CL - Cile 7
MY - Malesia 7
PH - Filippine 7
TN - Tunisia 7
DO - Repubblica Dominicana 5
DZ - Algeria 5
EG - Egitto 5
KE - Kenya 5
LB - Libano 5
PE - Perù 5
AZ - Azerbaigian 4
JM - Giamaica 4
MT - Malta 4
NI - Nicaragua 4
PA - Panama 4
PY - Paraguay 4
TH - Thailandia 4
TT - Trinidad e Tobago 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AO - Angola 3
BG - Bulgaria 3
BH - Bahrain 3
BY - Bielorussia 3
CR - Costa Rica 3
GR - Grecia 3
HU - Ungheria 3
KG - Kirghizistan 3
KZ - Kazakistan 3
LV - Lettonia 3
MD - Moldavia 3
NO - Norvegia 3
RS - Serbia 3
XK - ???statistics.table.value.countryCode.XK??? 3
AL - Albania 2
HN - Honduras 2
HR - Croazia 2
LK - Sri Lanka 2
MN - Mongolia 2
PS - Palestinian Territory 2
SI - Slovenia 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
UY - Uruguay 2
BN - Brunei Darussalam 1
BO - Bolivia 1
BS - Bahamas 1
CD - Congo 1
CY - Cipro 1
DK - Danimarca 1
Totale 47.325
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Città #
Wilmington 10.328
Houston 9.189
Woodbridge 7.503
Singapore 1.213
Fairfield 1.024
Chandler 826
Ashburn 786
Ann Arbor 694
San Jose 605
Beijing 551
Seattle 433
Dublin 407
Hong Kong 393
Cambridge 344
Rome 332
Medford 290
Los Angeles 272
Dearborn 262
Chicago 259
Jacksonville 248
New York 238
Zhengzhou 206
Tokyo 205
The Dalles 180
Santa Clara 175
Lawrence 135
Salt Lake City 130
Ho Chi Minh City 122
Lauterbourg 121
Moscow 121
Hanoi 102
Buffalo 96
Menlo Park 88
Dallas 77
Council Bluffs 72
Elk Grove Village 68
San Diego 67
Kraków 64
São Paulo 64
Tampa 62
Nanjing 61
Orem 57
Redondo Beach 52
Helsinki 51
London 50
Shanghai 50
Amsterdam 42
Warsaw 37
Montreal 35
Sterling 35
Munich 33
Chennai 31
Miami 31
Frankfurt am Main 29
Redwood City 29
Toronto 28
Brooklyn 27
Denver 26
Milan 26
Cedarhurst 25
Taipei 25
Hangzhou 24
Poplar 24
Atlanta 23
Phoenix 23
Stockholm 23
Chongqing 22
Seoul 22
Grottaferrata 21
Johannesburg 21
Kunming 21
Lancaster 21
Norwalk 21
Hefei 20
Suzhou 20
Boardman 19
Nuremberg 19
Jakarta 18
Manchester 17
Torrejón de Ardoz 17
Boston 16
Da Nang 16
Mountain View 16
Paris 16
San Francisco 16
Dulles 15
Guangzhou 15
Lappeenranta 15
Mexico City 15
Muscat 15
Alamosa 14
Ankara 14
Belo Horizonte 14
Falls Church 14
Haiphong 14
Mumbai 14
Naples 14
Yunlin 14
Brussels 13
North Bergen 13
Totale 39.821
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Nome #
V2O5 MISFETs on H-Terminated Diamond 500
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 489
High power-handling GaN switch for S-band applications 488
Millimeter wave low noise amplifier for satellite and radio astronomy applications 487
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 487
T/R modules front-end integration in GaN technology 479
H-Terminated Diamond MISFETs with V2O5 as Insulator 473
Development of GaN based MMIC for next generation X-Band space SAR T/R module 467
Constant mismatch circles and application to low noise microwave amplifier design 464
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 460
Closed-form noise parameters of a transmission line under thermal gradients 457
Gate-source distance scaling effects in H-terminated diamond MESFETs 456
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 452
Polynomial noise modeling of Silicon based GaN HEMTs 450
GaN-on-silicon evaluation for high-power MMIC applications 449
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 449
Black-box noise modeling of GaAs HEMTs under illumination 447
Realization and measurement of an RF energy harvesting circuit working on LTE frequency bands 439
Robust GaN Successive-Detection Logarithmic Video-Amplifier for EW applications 438
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 438
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 434
Robust GaN MMIC chipset for T/R module front-end integration 430
Broadband Nonreciprocal Phase Shifter Design Technique 429
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 427
Characterization and modeling of low-cost, high-performance GaN/Si technology 424
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 422
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 421
Robust GaN MMIC Chipset for T/R Module Front-End Integration 419
Fabrication and Performance of Microwave Diamond Devices for Space Applications 411
An active dispersive delay line in GaN MMIC technology for X-band applications 410
Cold-source cryogenic characterization and modeling of a mHEMT process 409
Highly reliable characterization approaches oriented to active device noise modeling 408
Evaluation of coaxial cable performance under thermal gradients 407
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 405
Towards the Realization of a Single-Chip Front-End in GaN Technology 404
Design and implementation of ambient RF energy harvesting circuits 401
Robust LNA in GaN Technology 401
A Measurement-Based Approach to Model Scaling Properties of FETs 401
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 399
RF Energy Harvesting for DVB-T Signals 399
Design Procedure for Compact Asymmetric SPDT Switches and Full X-Band Demonstrator 398
Broadband resistive-inductive compensated GaN-HEMT single-FET switch 397
“GaN-based robust low noise amplifiers 397
Novel broadband nonreciprocal 180° phase-shifter 397
Distributed active balun with improved linearity performance 394
Source/load-pull noise measurements at ka band 392
High-density Mixed Signal RF Front-End Electronics for T-R Modules 388
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 387
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 386
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 385
High performance X-band LNAs using a 0.25 μm GaN technology 385
Design and Implementation of Ambient RF Energy Harvesting Circuits 384
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 384
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 383
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 382
MMIC Millimeter-Wave Front-End Electronics 379
A multi-finger modeling approach to correctly predict the inherent stability of a custom active device 379
Tunable Active Inductors for High-Frequency Applications 378
A GaAs MMIC active inductor for notch filtering up to K-band 373
BPSK modulator for 2-18 GHz Vector Modulator 373
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 371
Highly reliable characterization approaches oriented to active device noise modeling 368
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs 368
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 366
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 363
Automated Determination of Device Noise Parameters Using Multi-Frequency, Source- Pull Data 360
Design procedure for compact asymmetric SPDT switches and full X-band demonstrator 360
Partitioned Ohtomo stability test for efficient analysis of large-signal solutions 357
A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA 357
EM isolation enhancement based on metamaterial concept in antenna array system to support full-duplex application 356
Resistive bias network for optimized isolation in SPDT switches 352
Characterization and modelling of high-frequency active devices oriented to high-sensitivity subsystem design 348
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 344
A high-performance C-band integrated front-end in AlGaN/GaN technology 340
D-band LNA using a 40-nm GaAs mHEMT technology 334
An active low-noise termination in GaN technology 334
An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency 333
Active and Passive Device Characterization and Modeling for low-cost and High Volume GaN-on-Si Technology 332
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 327
Small-signal and noise performance of 0.5 μm diamond MESFETs 323
A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach 323
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator 318
A GaN single chip front-end for C-band synthetic aperture radars 311
High level of automated process for broadband and X-band MMIC's production 308
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 307
Medium power X-Band LNA in 0.25 µm GaN technology 306
Investigation of microwave devices using diamond as a semiconductor material 294
Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications 289
Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers 261
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 261
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 261
On the Optimum Noise-Gain Locus of Two-Ports 260
Algorithmic Test of the Unconditional Stability of Three-Port Networks 260
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density 259
Improved microwave attenuator topology minimizing the number of control voltages 259
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 257
High power-handling SPDT switch in 0.25-μm GaN technology 256
Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications 255
GaN-based single-chip front-ends for radar systems 253
Hydrogen terminated diamond V2O5-based MISFETs 252
Totale 37.794
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Categoria #
all - tutte 116.858
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 116.858
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021266 0 0 0 0 0 0 0 0 0 0 193 73
2021/20221.518 74 162 47 77 74 106 67 67 150 130 107 457
2022/20232.028 239 215 79 218 171 465 154 154 189 17 67 60
2023/2024739 81 41 51 36 76 183 46 27 12 44 35 107
2024/20254.620 120 738 353 202 39 239 275 162 233 357 870 1.032
2025/20266.426 502 339 740 620 785 190 787 895 786 701 81 0
Totale 48.151