IRIS
COLANGELI, SERGIO
 Distribuzione geografica
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Continente #
NA - Nord America 36.126
AS - Asia 4.281
EU - Europa 2.907
SA - Sud America 649
AF - Africa 59
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 7
Totale 44.047
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Nazione #
US - Stati Uniti d'America 35.990
SG - Singapore 1.972
CN - Cina 1.155
IT - Italia 577
BR - Brasile 559
IE - Irlanda 435
HK - Hong Kong 372
UA - Ucraina 359
DE - Germania 303
RU - Federazione Russa 279
KR - Corea 208
GB - Regno Unito 192
SE - Svezia 182
VN - Vietnam 155
FR - Francia 137
FI - Finlandia 114
IN - India 114
PL - Polonia 109
CA - Canada 75
NL - Olanda 70
JP - Giappone 66
ES - Italia 50
MX - Messico 43
AR - Argentina 42
TW - Taiwan 36
TR - Turchia 34
BD - Bangladesh 31
CZ - Repubblica Ceca 28
ZA - Sudafrica 28
ID - Indonesia 27
IQ - Iraq 18
EC - Ecuador 16
AT - Austria 15
BE - Belgio 13
EU - Europa 13
MA - Marocco 13
CO - Colombia 12
AE - Emirati Arabi Uniti 11
CH - Svizzera 10
IL - Israele 10
IR - Iran 9
SA - Arabia Saudita 9
LT - Lituania 8
PK - Pakistan 8
RO - Romania 8
AU - Australia 6
CL - Cile 6
UZ - Uzbekistan 6
MY - Malesia 5
DO - Repubblica Dominicana 4
JO - Giordania 4
KE - Kenya 4
PA - Panama 4
PE - Perù 4
PY - Paraguay 4
TH - Thailandia 4
TN - Tunisia 4
TT - Trinidad e Tobago 4
VE - Venezuela 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AO - Angola 3
BG - Bulgaria 3
BH - Bahrain 3
KG - Kirghizistan 3
KZ - Kazakistan 3
NO - Norvegia 3
OM - Oman 3
RS - Serbia 3
AL - Albania 2
AZ - Azerbaigian 2
EG - Egitto 2
JM - Giamaica 2
LB - Libano 2
LK - Sri Lanka 2
MN - Mongolia 2
PH - Filippine 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
BN - Brunei Darussalam 1
BY - Bielorussia 1
DM - Dominica 1
DZ - Algeria 1
HN - Honduras 1
HR - Croazia 1
HU - Ungheria 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
NI - Nicaragua 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SO - Somalia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TG - Togo 1
Totale 44.047
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Città #
Wilmington 10.327
Houston 9.187
Woodbridge 7.503
Fairfield 1.024
Singapore 917
Chandler 826
Ann Arbor 694
Ashburn 674
Beijing 536
Seattle 431
Dublin 404
Hong Kong 367
Cambridge 344
Rome 292
Medford 289
Dearborn 262
Los Angeles 259
Chicago 256
Jacksonville 247
New York 207
Zhengzhou 206
Santa Clara 171
Lawrence 135
The Dalles 132
Salt Lake City 128
Menlo Park 88
Buffalo 85
Moscow 75
Dallas 74
Elk Grove Village 68
San Diego 67
Kraków 64
Tampa 62
São Paulo 55
Ho Chi Minh City 54
Redondo Beach 52
Shanghai 47
Tokyo 47
Nanjing 46
Council Bluffs 44
London 43
Amsterdam 35
Sterling 35
Warsaw 35
Munich 31
Miami 30
Hanoi 29
Redwood City 29
Helsinki 27
Toronto 27
Cedarhurst 25
Denver 25
Poplar 24
Milan 23
Montreal 23
Brooklyn 22
Hangzhou 22
Phoenix 22
Seoul 22
Stockholm 22
Chennai 21
Kunming 21
Lancaster 21
Norwalk 21
Hefei 20
Atlanta 19
Nuremberg 19
Boardman 18
Jakarta 17
Torrejón de Ardoz 17
Boston 16
Johannesburg 16
Mountain View 16
Orem 16
San Francisco 16
Taipei 16
Dulles 15
Guangzhou 15
Alamosa 14
Ankara 14
Falls Church 14
Lappeenranta 14
Yunlin 14
Belo Horizonte 13
Brussels 13
Mexico City 13
Creede 11
Mumbai 11
Pittsburgh 11
Rio de Janeiro 11
Verona 11
Brasília 10
Detroit 10
Frankfurt am Main 10
Jinan 10
Las Vegas 10
Mülheim 10
Bologna 9
Brno 9
Chengdu 9
Totale 37.868
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Nome #
V2O5 MISFETs on H-Terminated Diamond 481
Millimeter wave low noise amplifier for satellite and radio astronomy applications 478
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 469
High power-handling GaN switch for S-band applications 465
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 458
T/R modules front-end integration in GaN technology 454
H-Terminated Diamond MISFETs with V2O5 as Insulator 454
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 449
Development of GaN based MMIC for next generation X-Band space SAR T/R module 448
Constant mismatch circles and application to low noise microwave amplifier design 448
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 440
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 440
Closed-form noise parameters of a transmission line under thermal gradients 440
GaN-on-silicon evaluation for high-power MMIC applications 439
Black-box noise modeling of GaAs HEMTs under illumination 433
Polynomial noise modeling of Silicon based GaN HEMTs 432
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 428
Robust GaN Successive-Detection Logarithmic Video-Amplifier for EW applications 425
Gate-source distance scaling effects in H-terminated diamond MESFETs 423
Realization and measurement of an RF energy harvesting circuit working on LTE frequency bands 422
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 422
Robust GaN MMIC chipset for T/R module front-end integration 420
Broadband Nonreciprocal Phase Shifter Design Technique 418
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 413
Characterization and modeling of low-cost, high-performance GaN/Si technology 413
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 413
Robust GaN MMIC Chipset for T/R Module Front-End Integration 410
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 404
Fabrication and Performance of Microwave Diamond Devices for Space Applications 402
Highly reliable characterization approaches oriented to active device noise modeling 395
Evaluation of coaxial cable performance under thermal gradients 395
Cold-source cryogenic characterization and modeling of a mHEMT process 393
Design Procedure for Compact Asymmetric SPDT Switches and Full X-Band Demonstrator 390
Robust LNA in GaN Technology 387
Novel broadband nonreciprocal 180° phase-shifter 386
An active dispersive delay line in GaN MMIC technology for X-band applications 386
A Measurement-Based Approach to Model Scaling Properties of FETs 384
Broadband resistive-inductive compensated GaN-HEMT single-FET switch 383
RF Energy Harvesting for DVB-T Signals 383
Design and implementation of ambient RF energy harvesting circuits 382
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 381
“GaN-based robust low noise amplifiers 381
High-density Mixed Signal RF Front-End Electronics for T-R Modules 379
Distributed active balun with improved linearity performance 379
Towards the Realization of a Single-Chip Front-End in GaN Technology 375
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 372
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 372
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 371
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 369
MMIC Millimeter-Wave Front-End Electronics 369
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 368
A multi-finger modeling approach to correctly predict the inherent stability of a custom active device 368
Source/load-pull noise measurements at ka band 368
High performance X-band LNAs using a 0.25 μm GaN technology 367
Design and Implementation of Ambient RF Energy Harvesting Circuits 366
Tunable Active Inductors for High-Frequency Applications 362
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 361
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs 356
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 356
Highly reliable characterization approaches oriented to active device noise modeling 355
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 354
A GaAs MMIC active inductor for notch filtering up to K-band 352
Automated Determination of Device Noise Parameters Using Multi-Frequency, Source- Pull Data 348
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 347
Design procedure for compact asymmetric SPDT switches and full X-band demonstrator 346
BPSK modulator for 2-18 GHz Vector Modulator 346
Partitioned Ohtomo stability test for efficient analysis of large-signal solutions 344
EM isolation enhancement based on metamaterial concept in antenna array system to support full-duplex application 341
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 341
A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA 339
Characterization and modelling of high-frequency active devices oriented to high-sensitivity subsystem design 338
Resistive bias network for optimized isolation in SPDT switches 338
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 330
Active and Passive Device Characterization and Modeling for low-cost and High Volume GaN-on-Si Technology 320
A high-performance C-band integrated front-end in AlGaN/GaN technology 315
Small-signal and noise performance of 0.5 μm diamond MESFETs 314
An active low-noise termination in GaN technology 314
An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency 312
D-band LNA using a 40-nm GaAs mHEMT technology 306
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 303
A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach 300
High level of automated process for broadband and X-band MMIC's production 299
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator 297
A GaN single chip front-end for C-band synthetic aperture radars 288
Medium power X-Band LNA in 0.25 µm GaN technology 288
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 281
Investigation of microwave devices using diamond as a semiconductor material 277
Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications 261
Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers 254
On the Optimum Noise-Gain Locus of Two-Ports 252
Algorithmic Test of the Unconditional Stability of Three-Port Networks 248
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 242
Improved microwave attenuator topology minimizing the number of control voltages 241
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 240
High power-handling SPDT switch in 0.25-μm GaN technology 240
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 238
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density 238
Hydrogen terminated diamond V2O5-based MISFETs 234
Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology 233
GaN-based single-chip front-ends for radar systems 232
Totale 36.111
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Categoria #
all - tutte 109.481
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 109.481
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.036 0 0 0 0 0 894 852 677 139 208 193 73
2021/20221.518 74 162 47 77 74 106 67 67 150 130 107 457
2022/20232.028 239 215 79 218 171 465 154 154 189 17 67 60
2023/2024739 81 41 51 36 76 183 46 27 12 44 35 107
2024/20254.620 120 738 353 202 39 239 275 162 233 357 870 1.032
2025/20263.138 502 339 740 620 785 152 0 0 0 0 0 0
Totale 44.863