IRIS
COLANGELI, SERGIO
 Distribuzione geografica
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Continente #
NA - Nord America 40.103
AS - Asia 5.829
EU - Europa 4.132
Continente sconosciuto - Info sul continente non disponibili 863
SA - Sud America 761
AF - Africa 85
OC - Oceania 10
Totale 51.783
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Nazione #
US - Stati Uniti d'America 39.711
SG - Singapore 2.340
CN - Cina 1.458
IT - Italia 1.001
RU - Federazione Russa 630
BR - Brasile 624
IE - Irlanda 439
VN - Vietnam 413
HK - Hong Kong 404
UA - Ucraina 368
DE - Germania 336
FR - Francia 304
GB - Regno Unito 249
BD - Bangladesh 244
JP - Giappone 243
SE - Svezia 231
KR - Corea 210
CA - Canada 180
IN - India 157
FI - Finlandia 139
PL - Polonia 113
NL - Olanda 101
ES - Italia 72
MX - Messico 56
AR - Argentina 55
TW - Taiwan 55
TR - Turchia 44
ID - Indonesia 42
ZA - Sudafrica 35
IQ - Iraq 33
CZ - Repubblica Ceca 31
CO - Colombia 28
CR - Costa Rica 25
JM - Giamaica 23
EC - Ecuador 21
TT - Trinidad e Tobago 21
NI - Nicaragua 20
PK - Pakistan 19
AE - Emirati Arabi Uniti 17
AT - Austria 17
OM - Oman 17
PR - Porto Rico 16
SA - Arabia Saudita 16
CH - Svizzera 15
BE - Belgio 14
EU - Europa 13
MA - Marocco 13
RO - Romania 13
IL - Israele 12
MY - Malesia 12
UZ - Uzbekistan 12
VE - Venezuela 12
CW - ???statistics.table.value.countryCode.CW??? 11
LT - Lituania 11
GT - Guatemala 10
PH - Filippine 10
SV - El Salvador 10
AU - Australia 9
CL - Cile 9
IR - Iran 9
JO - Giordania 9
NP - Nepal 9
HN - Honduras 8
CY - Cipro 7
GP - Guadalupe 7
TH - Thailandia 7
TN - Tunisia 7
KE - Kenya 6
DO - Repubblica Dominicana 5
DZ - Algeria 5
EG - Egitto 5
KZ - Kazakistan 5
LB - Libano 5
PA - Panama 5
PE - Perù 5
AZ - Azerbaigian 4
GR - Grecia 4
MD - Moldavia 4
MT - Malta 4
PY - Paraguay 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AO - Angola 3
BG - Bulgaria 3
BH - Bahrain 3
BY - Bielorussia 3
DK - Danimarca 3
EE - Estonia 3
HU - Ungheria 3
KG - Kirghizistan 3
LV - Lettonia 3
NO - Norvegia 3
RS - Serbia 3
XK - ???statistics.table.value.countryCode.XK??? 3
AL - Albania 2
BB - Barbados 2
BS - Bahamas 2
HR - Croazia 2
LK - Sri Lanka 2
LY - Libia 2
MN - Mongolia 2
Totale 50.921
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Città #
Wilmington 10.328
Houston 9.191
Woodbridge 7.504
Singapore 1.219
Ashburn 1.154
Fairfield 1.024
San Jose 933
Chandler 826
Ann Arbor 695
Beijing 560
Seattle 438
Dublin 407
Hong Kong 396
Rome 366
Cambridge 346
Los Angeles 319
Medford 291
Chicago 276
New York 273
Dearborn 262
Council Bluffs 257
Jacksonville 251
Tokyo 211
Santa Clara 210
Zhengzhou 206
The Dalles 183
Salt Lake City 140
Lawrence 135
Ho Chi Minh City 124
Lauterbourg 121
Moscow 121
Buffalo 110
Hanoi 104
Dallas 95
Menlo Park 88
Denver 73
São Paulo 72
San Diego 70
Elk Grove Village 68
Tampa 66
Kraków 64
Nanjing 61
Milan 57
Orem 57
Redondo Beach 53
London 52
Shanghai 52
Helsinki 51
Toronto 49
Montreal 48
Amsterdam 44
Miami 41
Phoenix 38
Warsaw 37
Brooklyn 35
Chennai 35
Munich 35
Sterling 35
Atlanta 34
Naples 34
North Bergen 33
Frankfurt am Main 29
Redwood City 29
Taipei 26
Cedarhurst 25
San Francisco 25
Hangzhou 24
Poplar 24
Stockholm 23
Chongqing 22
Johannesburg 22
Norwalk 22
Seoul 22
Grottaferrata 21
Kunming 21
Lancaster 21
San José 21
Suzhou 21
Boardman 20
Boston 20
Hefei 20
Nuremberg 19
Jakarta 18
Managua 18
Manchester 18
Paris 18
Washington 18
Las Vegas 17
Newark 17
Torrejón de Ardoz 17
Da Nang 16
Mountain View 16
Ankara 15
Brasília 15
Dulles 15
Guangzhou 15
Haiphong 15
Lappeenranta 15
Mexico City 15
Monte Vista 15
Totale 41.228
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Nome #
V2O5 MISFETs on H-Terminated Diamond 518
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 506
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 504
T/R modules front-end integration in GaN technology 500
High power-handling GaN switch for S-band applications 500
Millimeter wave low noise amplifier for satellite and radio astronomy applications 499
H-Terminated Diamond MISFETs with V2O5 as Insulator 493
Development of GaN based MMIC for next generation X-Band space SAR T/R module 491
Gate-source distance scaling effects in H-terminated diamond MESFETs 487
Constant mismatch circles and application to low noise microwave amplifier design 483
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 482
Closed-form noise parameters of a transmission line under thermal gradients 475
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 469
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 464
GaN-on-silicon evaluation for high-power MMIC applications 463
Black-box noise modeling of GaAs HEMTs under illumination 463
Polynomial noise modeling of Silicon based GaN HEMTs 462
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 457
Robust GaN Successive-Detection Logarithmic Video-Amplifier for EW applications 453
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 453
Realization and measurement of an RF energy harvesting circuit working on LTE frequency bands 450
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 448
Broadband Nonreciprocal Phase Shifter Design Technique 446
Robust GaN MMIC chipset for T/R module front-end integration 444
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 440
Characterization and modeling of low-cost, high-performance GaN/Si technology 437
RF Energy Harvesting for DVB-T Signals 436
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 435
Robust GaN MMIC Chipset for T/R Module Front-End Integration 434
Tunable Active Inductors for High-Frequency Applications 432
An active dispersive delay line in GaN MMIC technology for X-band applications 426
Towards the Realization of a Single-Chip Front-End in GaN Technology 426
Source/load-pull noise measurements at ka band 425
Fabrication and Performance of Microwave Diamond Devices for Space Applications 423
Cold-source cryogenic characterization and modeling of a mHEMT process 423
Highly reliable characterization approaches oriented to active device noise modeling 421
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 421
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 419
Distributed active balun with improved linearity performance 418
Evaluation of coaxial cable performance under thermal gradients 417
A Measurement-Based Approach to Model Scaling Properties of FETs 416
Design and implementation of ambient RF energy harvesting circuits 414
Design Procedure for Compact Asymmetric SPDT Switches and Full X-Band Demonstrator 413
“GaN-based robust low noise amplifiers 411
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 411
Novel broadband nonreciprocal 180° phase-shifter 409
High-density Mixed Signal RF Front-End Electronics for T-R Modules 407
Robust LNA in GaN Technology 407
Broadband resistive-inductive compensated GaN-HEMT single-FET switch 406
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 406
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 404
Design and Implementation of Ambient RF Energy Harvesting Circuits 404
MMIC Millimeter-Wave Front-End Electronics 402
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 402
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 401
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 397
High performance X-band LNAs using a 0.25 μm GaN technology 395
Deterministic design of simultaneously matched, two-stage low-noise amplifiers 394
A multi-finger modeling approach to correctly predict the inherent stability of a custom active device 393
Highly reliable characterization approaches oriented to active device noise modeling 391
BPSK modulator for 2-18 GHz Vector Modulator 391
Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process 389
A GaAs MMIC active inductor for notch filtering up to K-band 386
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs 380
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 379
Automated Determination of Device Noise Parameters Using Multi-Frequency, Source- Pull Data 377
Resistive bias network for optimized isolation in SPDT switches 375
Design procedure for compact asymmetric SPDT switches and full X-band demonstrator 374
Partitioned Ohtomo stability test for efficient analysis of large-signal solutions 370
A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA 368
EM isolation enhancement based on metamaterial concept in antenna array system to support full-duplex application 365
Characterization and modelling of high-frequency active devices oriented to high-sensitivity subsystem design 364
Advanced characterization approaches oriented to microwave cryogenic and noise source-pull measurements 357
An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency 355
A high-performance C-band integrated front-end in AlGaN/GaN technology 353
An active low-noise termination in GaN technology 350
D-band LNA using a 40-nm GaAs mHEMT technology 349
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 349
Active and Passive Device Characterization and Modeling for low-cost and High Volume GaN-on-Si Technology 348
A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach 341
Medium power X-Band LNA in 0.25 µm GaN technology 338
Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator 338
Small-signal and noise performance of 0.5 μm diamond MESFETs 337
Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications 328
A GaN single chip front-end for C-band synthetic aperture radars 322
High level of automated process for broadband and X-band MMIC's production 321
Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology 321
Investigation of microwave devices using diamond as a semiconductor material 306
Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers 285
Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications 276
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 275
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications 275
Algorithmic Test of the Unconditional Stability of Three-Port Networks 275
Improved microwave attenuator topology minimizing the number of control voltages 274
Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density 271
On the Optimum Noise-Gain Locus of Two-Ports 271
Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology 270
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 270
High power-handling SPDT switch in 0.25-μm GaN technology 269
GaN-based single-chip front-ends for radar systems 268
Totale 39.536
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Categoria #
all - tutte 131.479
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 131.479
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.235 0 0 0 77 74 106 67 67 150 130 107 457
2022/20232.028 239 215 79 218 171 465 154 154 189 17 67 60
2023/2024739 81 41 51 36 76 183 46 27 12 44 35 107
2024/20254.620 120 738 353 202 39 239 275 162 233 357 870 1.032
2025/20267.108 502 339 740 620 785 190 787 895 786 701 367 396
2026/20272.950 410 445 1.331 764 0 0 0 0 0 0 0 0
Totale 51.783