Classical Series-Shunt and T-shape SPDTs provide an isolation degrading in frequency which, to be adequately counteracted, may require high-value (and, therefore, large-size) resonating inductors. In this contribution, a resistive bias network is added to a T-shape SPDT instead of introducing inductors. A derived analytical description evidences that the maximum isolation can be shifted in frequency by selecting the proper resistive values. Such an architecture offers high isolation values and, at the same time, considerable area savings as compared to the inductor-based approach. A test circuit operating in S-Band was designed and a 72 dB isolation was achieved, as well as a return loss of about 20 dB.
Polli, G., Palomba, M., Colangeli, S., Salvucci, A., Limiti, E. (2016). Resistive bias network for optimized isolation in SPDT switches. In Proceedings of the 21th International Conference on Microwave, Radar and Wireless Communications (pp.1-4). IEEE [10.1109/MIKON.2016.7491949].
Resistive bias network for optimized isolation in SPDT switches
POLLI, GIORGIO;PALOMBA, MIRKO;COLANGELI, SERGIO;SALVUCCI, ALESSANDRO;LIMITI, ERNESTO
2016-01-01
Abstract
Classical Series-Shunt and T-shape SPDTs provide an isolation degrading in frequency which, to be adequately counteracted, may require high-value (and, therefore, large-size) resonating inductors. In this contribution, a resistive bias network is added to a T-shape SPDT instead of introducing inductors. A derived analytical description evidences that the maximum isolation can be shifted in frequency by selecting the proper resistive values. Such an architecture offers high isolation values and, at the same time, considerable area savings as compared to the inductor-based approach. A test circuit operating in S-Band was designed and a 72 dB isolation was achieved, as well as a return loss of about 20 dB.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.