A low noise amplifier operating in the 8.5÷11.5 GHz (X Band) was designed and realized. The LNA uses the AlGaN/GaN HEMT technology provided by the Leonardo foundry. The low noise amplifier is composed by a cascaded of three single-ended stages. The realized MMIC amplifier has the following measured performance: 24.7dB small-signal gain with a ±1 dB ripple; a noise figure ranging from 1.6 dB to 1.8 dB in the upper half of the X Band, and reaching 2.1 dB full band; a 1-dB output compression point of 26.7 dBm was obtained. Chip size is 3.0x1.5 mm2. The design approach implemented is focused on maximizing overall gain and noise performance, as well as obtaining a good level of output power.

Vittori, M., Colangeli, S., Ciccognani, W., Cleriti, R., Limiti, E. (2017). Medium power X-Band LNA in 0.25 µm GaN technology. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 12(4), 275-280.

Medium power X-Band LNA in 0.25 µm GaN technology

Marco Vittori
;
Sergio Colangeli;Walter Ciccognani;Riccardo Cleriti;Ernesto Limiti
2017-01-01

Abstract

A low noise amplifier operating in the 8.5÷11.5 GHz (X Band) was designed and realized. The LNA uses the AlGaN/GaN HEMT technology provided by the Leonardo foundry. The low noise amplifier is composed by a cascaded of three single-ended stages. The realized MMIC amplifier has the following measured performance: 24.7dB small-signal gain with a ±1 dB ripple; a noise figure ranging from 1.6 dB to 1.8 dB in the upper half of the X Band, and reaching 2.1 dB full band; a 1-dB output compression point of 26.7 dBm was obtained. Chip size is 3.0x1.5 mm2. The design approach implemented is focused on maximizing overall gain and noise performance, as well as obtaining a good level of output power.
2017
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
Low Noise Amplifier, X-Band, load pull, MMIC
http://www.ijmot.com/VOL12NO4.ASPX
Vittori, M., Colangeli, S., Ciccognani, W., Cleriti, R., Limiti, E. (2017). Medium power X-Band LNA in 0.25 µm GaN technology. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 12(4), 275-280.
Vittori, M; Colangeli, S; Ciccognani, W; Cleriti, R; Limiti, E
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/199897
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? ND
social impact