An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31-dB isolation together with an insertion loss less than 0.5 dB both in Rx-and Tx-mode.
Polli, G., Palomba, M., Colangeli, S., Ciccognani, W., Salvucci, A., Vittori, M., et al. (2018). High power-handling SPDT switch in 0.25-μm GaN technology. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 28(9), e21413 [10.1002/mmce.21413].
High power-handling SPDT switch in 0.25-μm GaN technology
Polli G.
;Colangeli S.;Ciccognani W.;Salvucci A.;Vittori M.;Limiti E.
2018-01-01
Abstract
An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31-dB isolation together with an insertion loss less than 0.5 dB both in Rx-and Tx-mode.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
