An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31-dB isolation together with an insertion loss less than 0.5 dB both in Rx-and Tx-mode.

Polli, G., Palomba, M., Colangeli, S., Ciccognani, W., Salvucci, A., Vittori, M., et al. (2018). High power-handling SPDT switch in 0.25-μm GaN technology. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 28(9), e21413 [10.1002/mmce.21413].

High power-handling SPDT switch in 0.25-μm GaN technology

Polli G.
;
Colangeli S.;Ciccognani W.;Salvucci A.;Vittori M.;Limiti E.
2018-01-01

Abstract

An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31-dB isolation together with an insertion loss less than 0.5 dB both in Rx-and Tx-mode.
2018
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
AESA; GaN; High power-handling; S-band; Switch; TRM
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1099-047X
Polli, G., Palomba, M., Colangeli, S., Ciccognani, W., Salvucci, A., Vittori, M., et al. (2018). High power-handling SPDT switch in 0.25-μm GaN technology. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 28(9), e21413 [10.1002/mmce.21413].
Polli, G; Palomba, M; Colangeli, S; Ciccognani, W; Salvucci, A; Vittori, M; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/216986
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