The present contribution summarizes the activities performed towards the realization of a Single-Chip Front-End (SCFE) operating in C Band, integrating the High Power, Low Noise amplification and switching functionalities to be provided in modern T/R modules’ Front-Ends for space SAR applications. The technologies adopted in this project are provided by United Monolithic Semiconductors (UMS) and Selex Electronic Systems (SLX), the GH25-10 0.25 μm gate length and the GaN technology featured by 0.5 μm gate length for UMS and SLX respectively. At the completion of the design phase two SCFEs have been designed in the two technologies, each in two slightly different versions, featured by state-of-the-art performance. In particular, in Tx-mode, both are featured by approximately 40 W power output, with 36 dB large-signal gain and 38 % / 27 % PAE for UMS and SLX versions respectively, while in Rx-mode 2.5 dB noise figure resulted, with robust operation. The two dies are featured by 6.9 x 5.4 mm2 and 7.28 x 5.40 mm2 for UMS and SLX versions respectively.

Limiti, E., Ciccognani, W., Cipriani, E., Colangeli, S., Colantonio, P., Feudale, M., et al. (2014). Towards the Realization of a Single-Chip Front-End in GaN Technology. In Proceedings of the Micro- and millimeter wave technology and techniques workshop.

Towards the Realization of a Single-Chip Front-End in GaN Technology

LIMITI, ERNESTO;CICCOGNANI, WALTER;COLANGELI, SERGIO;COLANTONIO, PAOLO;PALOMBA, MIRKO;
2014-01-01

Abstract

The present contribution summarizes the activities performed towards the realization of a Single-Chip Front-End (SCFE) operating in C Band, integrating the High Power, Low Noise amplification and switching functionalities to be provided in modern T/R modules’ Front-Ends for space SAR applications. The technologies adopted in this project are provided by United Monolithic Semiconductors (UMS) and Selex Electronic Systems (SLX), the GH25-10 0.25 μm gate length and the GaN technology featured by 0.5 μm gate length for UMS and SLX respectively. At the completion of the design phase two SCFEs have been designed in the two technologies, each in two slightly different versions, featured by state-of-the-art performance. In particular, in Tx-mode, both are featured by approximately 40 W power output, with 36 dB large-signal gain and 38 % / 27 % PAE for UMS and SLX versions respectively, while in Rx-mode 2.5 dB noise figure resulted, with robust operation. The two dies are featured by 6.9 x 5.4 mm2 and 7.28 x 5.40 mm2 for UMS and SLX versions respectively.
Micro- and millimeter wave technology and techniques workshop
Noordwijk, The Netherlands
2014
ESA-ESTEC
Rilevanza internazionale
contributo
2014
2014
Settore ING-INF/01 - ELETTRONICA
English
high power; low noise amplification and switching
Intervento a convegno
Limiti, E., Ciccognani, W., Cipriani, E., Colangeli, S., Colantonio, P., Feudale, M., et al. (2014). Towards the Realization of a Single-Chip Front-End in GaN Technology. In Proceedings of the Micro- and millimeter wave technology and techniques workshop.
Limiti, E; Ciccognani, W; Cipriani, E; Colangeli, S; Colantonio, P; Feudale, M; Florian, C; Palomba, M; Pirola, M; Ayllon, N
File in questo prodotto:
File Dimensione Formato  
Towards the realization of a Single-Chip Front-End in GaN Technology.pdf

solo utenti autorizzati

Licenza: Copyright dell'editore
Dimensione 645.98 kB
Formato Adobe PDF
645.98 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/180772
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact