IRIS
LONGO, MASSIMO
 Distribuzione geografica
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Continente #
AS - Asia 2.426
NA - Nord America 1.776
EU - Europa 610
SA - Sud America 332
AF - Africa 41
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 1
Totale 5.195
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Nazione #
US - Stati Uniti d'America 1.713
SG - Singapore 1.532
HK - Hong Kong 331
RU - Federazione Russa 294
BR - Brasile 273
CN - Cina 162
IT - Italia 151
VN - Vietnam 136
JP - Giappone 117
IN - India 31
GB - Regno Unito 27
DE - Germania 26
MX - Messico 24
CA - Canada 23
AR - Argentina 22
FR - Francia 22
ID - Indonesia 22
ZA - Sudafrica 19
BD - Bangladesh 18
NL - Olanda 17
ES - Italia 13
FI - Finlandia 10
IQ - Iraq 10
PY - Paraguay 10
TR - Turchia 10
EC - Ecuador 9
PK - Pakistan 9
PL - Polonia 9
SE - Svezia 8
UA - Ucraina 8
AT - Austria 7
AU - Australia 7
PH - Filippine 6
UY - Uruguay 6
IR - Iran 5
MA - Marocco 5
RO - Romania 5
SA - Arabia Saudita 5
SN - Senegal 5
VE - Venezuela 5
AE - Emirati Arabi Uniti 4
IE - Irlanda 4
TT - Trinidad e Tobago 4
UZ - Uzbekistan 4
DZ - Algeria 3
IL - Israele 3
JO - Giordania 3
LT - Lituania 3
NI - Nicaragua 3
NP - Nepal 3
AZ - Azerbaigian 2
CL - Cile 2
CO - Colombia 2
DO - Repubblica Dominicana 2
KZ - Kazakistan 2
MY - Malesia 2
PE - Perù 2
PS - Palestinian Territory 2
TN - Tunisia 2
AM - Armenia 1
AO - Angola 1
AS - Samoa Americane 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BS - Bahamas 1
CH - Svizzera 1
CR - Costa Rica 1
CU - Cuba 1
DM - Dominica 1
EG - Egitto 1
ET - Etiopia 1
GY - Guiana 1
HU - Ungheria 1
JM - Giamaica 1
KE - Kenya 1
KH - Cambogia 1
KR - Corea 1
KW - Kuwait 1
LB - Libano 1
PA - Panama 1
PR - Porto Rico 1
PW - Palau 1
QA - Qatar 1
RS - Serbia 1
SI - Slovenia 1
SO - Somalia 1
TG - Togo 1
TH - Thailandia 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZW - Zimbabwe 1
Totale 5.195
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Città #
Singapore 731
Hong Kong 328
San Jose 320
Santa Clara 122
Tokyo 113
Ashburn 104
Engelhard 87
Los Angeles 85
The Dalles 76
Rome 71
Council Bluffs 67
Moscow 48
Beijing 46
Ho Chi Minh City 46
Buffalo 45
New York 35
São Paulo 35
Hanoi 33
Durham 28
Dallas 21
Denver 19
Jakarta 19
North Bergen 19
Redondo Beach 17
Chicago 16
Lauterbourg 16
Nuremberg 14
Brooklyn 13
Da Nang 11
Amsterdam 10
Belo Horizonte 10
Houston 10
Johannesburg 10
Campinas 9
London 9
Montreal 9
Orem 9
Warsaw 9
Lappeenranta 8
Rio de Janeiro 8
Stockholm 8
Viterbo 8
Atlanta 7
Chennai 7
Haiphong 7
Salt Lake City 7
Seattle 7
Sydney 7
Boston 6
Frankfurt am Main 6
Mexico City 6
Milan 6
Tampa 6
Ankara 5
Asunción 5
Brasília 5
Dakar 5
Guayaquil 5
Manila 5
Montevideo 5
Nepi 5
New Delhi 5
Salvador 5
San Francisco 5
Tehran 5
Contagem 4
Curitiba 4
Dhaka 4
Dublin 4
Istanbul 4
Joinville 4
Manaus 4
Munich 4
Poplar 4
Port Elizabeth 4
Tashkent 4
Toronto 4
Vienna 4
Amman 3
Baghdad 3
Billings 3
Bologna 3
Brantford 3
Bucharest 3
Bắc Giang 3
Casablanca 3
Charlotte 3
Goiânia 3
Hải Dương 3
Managua 3
Mauá 3
Ninh Bình 3
Pelotas 3
Phoenix 3
Querétaro 3
Santo André 3
Sorocaba 3
Taranto 3
Águas Lindas de Goiás 3
Abu Dhabi 2
Totale 2.951
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Nome #
Au-catalyzed self assembly of GeTe nanowires by MOCVD 236
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 193
Structural and electrical properties of annealed Ge2Sb2Te5 films grown on flexible polyimide 120
Interface formation during the growth of phase change material heterostructures based on Ge-Rich Ge-Sb-Te alloys 104
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 86
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics 84
Growth, electronic and electrical characterization of Ge-Rich Ge-Sb-Te alloy 81
Nanodiamonds from the inside of washing machine: upcycling of textile microfibers and wastewater bioremediation for vegetable production 80
A Novel Sb2Te3 Polymorph Stable at the Nanoscale 80
Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films 78
Deep levels controlling the electrical properties of Fe-implanted GaInPGaAs 72
Determination of the valence band offset of MOVPE-grown In0.48 Ga0.52 P/GaAs multiple quantum wells by admittance spectroscopy 69
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 69
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 66
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching 65
Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells 65
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 64
Crystal structure assessment of Ge-Sb-Te phase change nanowires 64
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films 64
Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells 64
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires 63
Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique 62
Thermal characterization of the SiO2 -Ge2Sb2Te5 interface from room temperature up to 400 °C 62
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process 61
Stranski-Krastanow self-organized growth of nano-scale ZnTe islands on (0 0 1)GaAs by metalorganic vapour phase epitaxy 60
Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation 60
Chemical vapor deposition of chalcogenide materials for phase-change memories 58
MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires 58
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM 58
Evolution of thermal conductivity of In3Sb beta Te gamma thin films up to 550 degrees C 57
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films 57
Nanowire phase change memory (PCM) technologies: properties and performance 56
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 55
Advances in nanowire PCM 55
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD 54
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 54
A cross-correlator-based timing tool for FemtoMAX 54
MOCVD growth and structural characterization of In-Sb-Te nanowires 53
Exploiting the close-to-dirac point shift of the Fermi level in the Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion 53
Effect of nitrogen doping on the thermal conductivity of GeTe thin films 52
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 52
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition 52
On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy 52
Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 52
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 52
Exploiting optical near fields for phase change memories 51
Special Issue “Thin Films and Nanostructures by MOCVD: Fabrication, Characterization and Applications - Volume II” 51
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques 51
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 50
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD 49
Electronic properties of crystalline Ge1-xSbxTey thin films 49
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films 49
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD 49
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance 48
Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD 47
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 47
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 47
Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wires 47
Stranski–Krastanow MOVPE growth of nanoscale ZnTe islands on (0 0 1)GaAs 46
Thermal properties of In-Sb-Te films and interfaces for phase change memory devices 46
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications 45
Structural and electrical analysis of in-sb-te-based PCM cells 45
Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD 45
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 45
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge?Sb?Te material system 44
Investigation of GaAs/InGaP superlattices for quantum well solar cells 44
Electrical and structural characterization of Fe implanted GaInP 44
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor 44
Thermal properties measurements of phase-change alloys within the configuration of nanostructures and devices 43
Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm 43
Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe)m(Sb2Te3)n 43
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 43
Optimization of the structural and optical properties of ZnS epilayers grown on (100) GaAs by MOVPE 42
Large-Area {MOVPE} Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111) 42
Ultraviolet optical near-fields of microspheres imprinted in phase change films 42
High resistivity in GaInP/GaAs by high temperature Fe Ion implantation 40
Evidence of Native Cs Impurities and Metal-Insulator Transition in MoS2 Natural Crystals 40
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 40
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 40
Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors 40
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires 40
Thermal resistance measurement of In3SbTe2 nanowires 40
Phase-Change Memories: Materials Science, Technological Applications and Perspectives 39
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 39
Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs 39
Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE 39
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth 38
Novel near-infrared emission from crystal defects in MoS2 multilayer flakes 38
Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation 38
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing 37
Electrically detected magnetic resonance of donors and interfacial defects in silicon nanowires 37
High-performance photothermal effect in MOCVD grown topological insulator Sb2Te3 nanograting 36
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 36
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 36
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 35
Admittance spectroscopy of GaAs/InGaP MQW structures 33
Electrical investigation of carbon intrinsically-doped GaAs layers grown by metalorganic vapour phase epitaxy from TMGa and TBAs 33
Thermal conductivity measurement of a Sb2Te3 phase change nanowire 32
From microfibers to nanodiamonds: the upcycling and reuse of washing machine wastewater 32
Structural study of (100) CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100) GaAs 32
Totale 5.516
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Categoria #
all - tutte 23.767
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.767
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202330 0 0 0 0 0 5 20 0 1 0 4 0
2023/2024569 2 0 3 0 2 11 268 222 11 5 10 35
2024/20252.214 48 541 287 106 17 107 178 57 148 102 370 253
2025/20262.703 225 226 346 237 303 107 331 399 326 194 9 0
Totale 5.516