IRIS
LONGO, MASSIMO
 Distribuzione geografica
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Continente #
AS - Asia 2.510
NA - Nord America 2.156
EU - Europa 651
SA - Sud America 334
Continente sconosciuto - Info sul continente non disponibili 325
AF - Africa 41
OC - Oceania 9
Totale 6.026
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Nazione #
US - Stati Uniti d'America 2.074
SG - Singapore 1.537
HK - Hong Kong 333
RU - Federazione Russa 294
BR - Brasile 273
IT - Italia 190
CN - Cina 178
VN - Vietnam 139
JP - Giappone 117
BD - Bangladesh 71
CA - Canada 34
IN - India 31
GB - Regno Unito 27
DE - Germania 26
MX - Messico 24
ID - Indonesia 23
AR - Argentina 22
FR - Francia 22
ZA - Sudafrica 19
NL - Olanda 17
ES - Italia 13
PY - Paraguay 11
FI - Finlandia 10
IQ - Iraq 10
TR - Turchia 10
EC - Ecuador 9
PK - Pakistan 9
PL - Polonia 9
SE - Svezia 8
UA - Ucraina 8
AT - Austria 7
AU - Australia 7
PH - Filippine 6
UY - Uruguay 6
IR - Iran 5
JM - Giamaica 5
MA - Marocco 5
NP - Nepal 5
RO - Romania 5
SA - Arabia Saudita 5
SN - Senegal 5
VE - Venezuela 5
AE - Emirati Arabi Uniti 4
IE - Irlanda 4
TT - Trinidad e Tobago 4
UZ - Uzbekistan 4
CO - Colombia 3
CR - Costa Rica 3
DZ - Algeria 3
IL - Israele 3
JO - Giordania 3
LT - Lituania 3
MY - Malesia 3
NI - Nicaragua 3
AZ - Azerbaigian 2
CL - Cile 2
DO - Repubblica Dominicana 2
KZ - Kazakistan 2
PE - Perù 2
PS - Palestinian Territory 2
TH - Thailandia 2
TN - Tunisia 2
AM - Armenia 1
AO - Angola 1
AS - Samoa Americane 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BS - Bahamas 1
BZ - Belize 1
CH - Svizzera 1
CU - Cuba 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EG - Egitto 1
ET - Etiopia 1
GY - Guiana 1
HR - Croazia 1
HT - Haiti 1
HU - Ungheria 1
KE - Kenya 1
KH - Cambogia 1
KR - Corea 1
KW - Kuwait 1
LB - Libano 1
PA - Panama 1
PR - Porto Rico 1
PW - Palau 1
QA - Qatar 1
RS - Serbia 1
SI - Slovenia 1
SO - Somalia 1
TG - Togo 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZW - Zimbabwe 1
Totale 5.702
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Città #
Singapore 732
San Jose 434
Hong Kong 330
Council Bluffs 138
Ashburn 127
Santa Clara 127
Tokyo 113
Los Angeles 92
Engelhard 87
Rome 83
The Dalles 76
Ho Chi Minh City 48
Moscow 48
Beijing 46
Buffalo 46
New York 44
São Paulo 35
Hanoi 34
Durham 29
Dallas 26
Denver 20
Jakarta 19
North Bergen 19
Chicago 18
Redondo Beach 17
Lauterbourg 16
Brooklyn 14
Nuremberg 14
Da Nang 11
Amsterdam 10
Belo Horizonte 10
Houston 10
Johannesburg 10
Montreal 10
Campinas 9
London 9
Milan 9
Orem 9
Warsaw 9
Lappeenranta 8
Phoenix 8
Rio de Janeiro 8
Stockholm 8
Viterbo 8
Atlanta 7
Chennai 7
Haiphong 7
Salt Lake City 7
Seattle 7
Sydney 7
Tampa 7
Asunción 6
Boston 6
Frankfurt am Main 6
Mexico City 6
Toronto 6
Ankara 5
Brasília 5
Dakar 5
Guayaquil 5
Manila 5
Montevideo 5
Nepi 5
New Delhi 5
Salvador 5
San Francisco 5
Tehran 5
Contagem 4
Curitiba 4
Dhaka 4
Dublin 4
Istanbul 4
Joinville 4
Manaus 4
Mount Pleasant 4
Munich 4
Naples 4
Poplar 4
Port Elizabeth 4
Tashkent 4
Vienna 4
Amman 3
Baghdad 3
Bari 3
Billings 3
Bologna 3
Brantford 3
Bucharest 3
Bắc Giang 3
Casablanca 3
Charlotte 3
Goiânia 3
Hải Dương 3
Indpls 3
Kingston 3
Las Vegas 3
Managua 3
Mauá 3
Milwaukee 3
Newark 3
Totale 3.225
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Nome #
Au-catalyzed self assembly of GeTe nanowires by MOCVD 241
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 195
Interface formation during the growth of phase change material heterostructures based on Ge-Rich Ge-Sb-Te alloys 130
Structural and electrical properties of annealed Ge2Sb2Te5 films grown on flexible polyimide 128
Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films 107
Ge enrichment of Ge–Sb–Te alloys as keystone of flexible edge electronics 95
Nanodiamonds from the inside of washing machine: upcycling of textile microfibers and wastewater bioremediation for vegetable production 94
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 90
Chemical vapor deposition of chalcogenide materials for phase-change memories 88
Growth, electronic and electrical characterization of Ge-Rich Ge-Sb-Te alloy 83
A Novel Sb2Te3 Polymorph Stable at the Nanoscale 82
Deep levels controlling the electrical properties of Fe-implanted GaInPGaAs 76
A cross-correlator-based timing tool for FemtoMAX 74
Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells 72
Determination of the valence band offset of MOVPE-grown In0.48 Ga0.52 P/GaAs multiple quantum wells by admittance spectroscopy 71
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 71
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 71
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 71
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films 69
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process 67
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching 67
Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells 67
Thermal characterization of the SiO2 -Ge2Sb2Te5 interface from room temperature up to 400 °C 66
Crystal structure assessment of Ge-Sb-Te phase change nanowires 66
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires 66
Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique 65
Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation 64
Nanowire phase change memory (PCM) technologies: properties and performance 64
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films 63
MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires 62
Stranski-Krastanow self-organized growth of nano-scale ZnTe islands on (0 0 1)GaAs by metalorganic vapour phase epitaxy 62
Advances in nanowire PCM 62
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM 61
MOCVD growth and structural characterization of In-Sb-Te nanowires 60
Evolution of thermal conductivity of In3Sb beta Te gamma thin films up to 550 degrees C 60
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 60
Effect of nitrogen doping on the thermal conductivity of GeTe thin films 59
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD 59
On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy 59
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 59
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques 59
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 57
Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 56
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD 56
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 55
Special Issue “Thin Films and Nanostructures by MOCVD: Fabrication, Characterization and Applications - Volume II” 55
Exploiting the close-to-dirac point shift of the Fermi level in the Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion 55
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 54
Exploiting optical near fields for phase change memories 54
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition 54
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance 54
Electronic properties of crystalline Ge1-xSbxTey thin films 53
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films 53
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD 52
Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wires 52
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 52
Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD 50
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 50
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 50
Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe)m(Sb2Te3)n 50
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth 49
Structural and electrical analysis of in-sb-te-based PCM cells 49
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications 48
Stranski–Krastanow MOVPE growth of nanoscale ZnTe islands on (0 0 1)GaAs 48
Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD 48
Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm 48
Optimization of the structural and optical properties of ZnS epilayers grown on (100) GaAs by MOVPE 47
Large-Area {MOVPE} Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111) 47
Ultraviolet optical near-fields of microspheres imprinted in phase change films 47
Thermal properties of In-Sb-Te films and interfaces for phase change memory devices 47
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor 47
Electrical and structural characterization of Fe implanted GaInP 46
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge?Sb?Te material system 45
Investigation of GaAs/InGaP superlattices for quantum well solar cells 45
Thermal properties measurements of phase-change alloys within the configuration of nanostructures and devices 45
From microfibers to nanodiamonds: the upcycling and reuse of washing machine wastewater 44
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 44
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing 44
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 44
Thermal resistance measurement of In3SbTe2 nanowires 44
High resistivity in GaInP/GaAs by high temperature Fe Ion implantation 43
Novel near-infrared emission from crystal defects in MoS2 multilayer flakes 43
Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation 43
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 43
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires 43
Electrically detected magnetic resonance of donors and interfacial defects in silicon nanowires 43
Phase-Change Memories: Materials Science, Technological Applications and Perspectives 42
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 42
Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors 42
Evidence of Native Cs Impurities and Metal-Insulator Transition in MoS2 Natural Crystals 41
Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE 41
Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs 40
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 39
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 39
High-performance photothermal effect in MOCVD grown topological insulator Sb2Te3 nanograting 37
Structural study of (100) CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100) GaAs 37
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 37
Thermal conductivity measurement of a Sb2Te3 phase change nanowire 36
Admittance spectroscopy of GaAs/InGaP MQW structures 36
Electrical investigation of carbon intrinsically-doped GaAs layers grown by metalorganic vapour phase epitaxy from TMGa and TBAs 36
Totale 6.026
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Categoria #
all - tutte 27.690
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 27.690
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202330 0 0 0 0 0 5 20 0 1 0 4 0
2023/2024569 2 0 3 0 2 11 268 222 11 5 10 35
2024/20252.214 48 541 287 106 17 107 178 57 148 102 370 253
2025/20263.044 225 226 346 237 303 107 331 399 326 194 212 138
2026/2027169 96 73 0 0 0 0 0 0 0 0 0 0
Totale 6.026