The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, were measured using a PhotoThermal Radiometry experiment. The two phase-changes of the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the fcc crystalline state at 130 °C and then to the hcp crystalline state at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
Battaglia, J.-., Cappella, A., Varesi, E., Schick, V., Kusiak, A., Wiemer, C., et al. (2010). Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique. ??????? it.cilea.surplus.oa.citation.tipologie.CitationProceedings.prensentedAt ??????? 15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15), Leuven, Belgium [10.1088/1742-6596/214/1/012102].
Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique
Longo, M.;
2010-01-01
Abstract
The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, were measured using a PhotoThermal Radiometry experiment. The two phase-changes of the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the fcc crystalline state at 130 °C and then to the hcp crystalline state at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.File | Dimensione | Formato | |
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