The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, were measured using a PhotoThermal Radiometry experiment. The two phase-changes of the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the fcc crystalline state at 130 °C and then to the hcp crystalline state at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.

Battaglia, J.-., Cappella, A., Varesi, E., Schick, V., Kusiak, A., Wiemer, C., et al. (2010). Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique. ??????? it.cilea.surplus.oa.citation.tipologie.CitationProceedings.prensentedAt ??????? 15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15), Leuven, Belgium [10.1088/1742-6596/214/1/012102].

Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique

Longo, M.;
2010-01-01

Abstract

The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, were measured using a PhotoThermal Radiometry experiment. The two phase-changes of the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the fcc crystalline state at 130 °C and then to the hcp crystalline state at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15)
Leuven, Belgium
2009
15
Rilevanza internazionale
2010
Settore FIS/03
English
Intervento a convegno
Battaglia, J.-., Cappella, A., Varesi, E., Schick, V., Kusiak, A., Wiemer, C., et al. (2010). Temperature-dependent thermal characterization of Ge2Sb 2Te5 and related interfaces by the photothermal radiometry technique. ??????? it.cilea.surplus.oa.citation.tipologie.CitationProceedings.prensentedAt ??????? 15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15), Leuven, Belgium [10.1088/1742-6596/214/1/012102].
Battaglia, J-; Cappella, A; Varesi, E; Schick, V; Kusiak, A; Wiemer, C; Longo, M; Gotti, A; Hay, B
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/351087
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