LONGO, MASSIMO

LONGO, MASSIMO  

Dipartimento di Scienze e Tecnologie Chimiche  

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Risultati 1 - 20 di 93 (tempo di esecuzione: 0.028 secondi).
Data di pubblicazione Titolo Autore(i) Tipo File
1-gen-2015 A Novel Sb2Te3 Polymorph Stable at the Nanoscale Rotunno, E; Longo, M; Wiemer, C; Fallica, R; Campi, D; Bernasconi, M; Lupini, Ar; Pennycook, Sj; Lazzarini, L Articolo su rivista
1-gen-2008 Admittance spectroscopy of GaAs/InGaP MQW structures Gombia, E; Ghezzi, C; Parisini, A; Tarricone, L; Longo, M Articolo su rivista
1-gen-2019 Advances in nanowire PCM Longo, M Contributo in libro
1-gen-2020 ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 Longo, E; Mantovan, R; Cecchini, R; Overbeek, Md; Longo, M; Trevisi, G; Lazzarini, L; Tallarida, G; Fanciulli, M; Winter, Ch; Wiemer, C Articolo su rivista
1-gen-2017 Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films Mantovan, R; Fallica, R; Mokhles Gerami, A; Mølholt, Te; Wiemer, C; Longo, M; Gunnlaugsson, Hp; Johnston, K; Masenda, H; Naidoo, D; Ncube, M; Bharuth-Ram, K; Fanciulli, M; Gislason, Hp; Langouche, G; Ólafsson, S; Weyer, G Articolo su rivista
1-gen-2011 Au-catalyzed self assembly of GeTe nanowires by MOCVD Longo, M; Wiemer, C; Salicio, O; Fanciulli, M; Lazzarini, L; Rotunno, E Articolo su rivista
1-gen-2013 Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD Longo, M; Stoycheva, T; Fallica, R; Wiemer, C; Lazzarini, L; Rotunno, E Articolo su rivista
1-gen-2008 Chemical vapor deposition of chalcogenide materials for phase-change memories Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Longo, M; Pirovano, A; Siegel, J; Gawelda, W; Rushworth, S; Giesen, C Articolo su rivista
1-gen-2019 Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface Longo, E; Wiemer, C; Cecchini, R; Longo, M; Lamperti, A; Khanas, A; Zenkevich, A; Fanciulli, M; Mantovan, R Articolo su rivista
1-gen-2003 Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Carbognani, A; Bocchi, C; Gombia, E Articolo su rivista
1-gen-2013 Crystal structure assessment of Ge-Sb-Te phase change nanowires Rotunno, E; Lazzarini, L; Longo, M; Grillo, V Articolo su rivista
1-gen-2007 Deep levels controlling the electrical properties of Fe-implanted GaInPGaAs Fraboni, B; Piana, E; Cesca, T; Gasparotto, A; Longo, M; Jakomin, R; Tarricone, L Articolo su rivista
1-gen-2012 Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM Lazzarini, L; Rotunno, E; Grillo, V; Longo, M Intervento a convegno
1-gen-2008 Determination of the valence band offset of MOVPE-grown In0.48 Ga0.52 P/GaAs multiple quantum wells by admittance spectroscopy Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Gombia, E; Longo, M Articolo su rivista
1-gen-2013 Effect of nitrogen doping on the thermal conductivity of GeTe thin films Fallica, R; Varesi, E; Fumagalli, L; Spadoni, S; Longo, M; Wiemer, C Articolo su rivista
1-gen-2021 Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films Rimoldi, M; Cecchini, R; Wiemer, C; Longo, E; Cecchi, S; Mantovan, R; Longo, M Articolo su rivista
1-gen-2004 Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources Begotti, M; Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Bocchi, C; Germini, F; Lazzarini, L; Nasi, L; Geddo, M Articolo su rivista
1-gen-2000 Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells Traetta, G; Passaseo, A; Longo, M; Cannoletta, D; Cingolani, R; Lomascolo, M; Bonfiglio, A; Carlo, Ad; Sala, Fd; Lugli, P; Botchkarev, A; Morko?, H Articolo su rivista
1-gen-2007 Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, L; Longo, M Intervento a convegno
1-gen-2005 Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE Begotti, M; Longo, M; Magnanini, R; Tarricone, L; Gombia, E; Mosca, R; Lynch, M; Barnham, K; Mazzer, M; Hill, G Articolo su rivista