We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers

Cesca, T., Verna, A., Gasparotto, A., Fraboni, B., Impellizzeri, G., Priolo, F., et al. (2005). High resistivity in GaInP/GaAs by high temperature Fe Ion implantation. In International Conference on Indium Phosphide and Related Materials, 2005 (pp.653-656). IEEE [10.1109/ICIPRM.2005.1517580].

High resistivity in GaInP/GaAs by high temperature Fe Ion implantation

Longo, M.
2005-01-01

Abstract

We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers
2005 InternationalConference on Indium Phosphide and Related Materials
Glasgow, UK
2005
Rilevanza internazionale
2005
Settore FIS/03
English
Conductivity; Gallium arsenide; Temperature; Iron; Ion implantation; Epitaxial layers; Physics; Annealing; Epitaxial growth; Substrates
Intervento a convegno
Cesca, T., Verna, A., Gasparotto, A., Fraboni, B., Impellizzeri, G., Priolo, F., et al. (2005). High resistivity in GaInP/GaAs by high temperature Fe Ion implantation. In International Conference on Indium Phosphide and Related Materials, 2005 (pp.653-656). IEEE [10.1109/ICIPRM.2005.1517580].
Cesca, T; Verna, A; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, L; Longo, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/351096
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