We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers
Cesca, T., Verna, A., Gasparotto, A., Fraboni, B., Impellizzeri, G., Priolo, F., et al. (2005). High resistivity in GaInP/GaAs by high temperature Fe Ion implantation. In International Conference on Indium Phosphide and Related Materials, 2005 (pp.653-656). IEEE [10.1109/ICIPRM.2005.1517580].
High resistivity in GaInP/GaAs by high temperature Fe Ion implantation
Longo, M.
2005-01-01
Abstract
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layersFile in questo prodotto:
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