Ge1-xSbxTey thin films, grown by metalorganic and hot-wire liquid injection chemical vapor deposition in different crystalline phases, are investigated to determine resistivity, carrier density, and carrier mobility in the 4.2–300 K temperature range. It is found that all these chalcogenides exhibit p-type conduction, high carrier density (>2 1020 cm 3 ), and no carrier freeze-out, regardless of composition. Low-temperature mobility data show that both chemical composition and growth technique affect the defect density and, in turn, the carrier scattering mechanisms. In this regard, charge carrier mobility is analyzed according to semi-empirical scattering models and an interpretation is provided.
Fallica, R., Volpe, F., Longo, M., Wiemer, C., Salicio, O., Abrutis, A. (2012). Electronic properties of crystalline Ge1-xSbxTey thin films. APPLIED PHYSICS LETTERS, 101(10) [10.1063/1.4749839].
Electronic properties of crystalline Ge1-xSbxTey thin films
Longo, M.;
2012-01-01
Abstract
Ge1-xSbxTey thin films, grown by metalorganic and hot-wire liquid injection chemical vapor deposition in different crystalline phases, are investigated to determine resistivity, carrier density, and carrier mobility in the 4.2–300 K temperature range. It is found that all these chalcogenides exhibit p-type conduction, high carrier density (>2 1020 cm 3 ), and no carrier freeze-out, regardless of composition. Low-temperature mobility data show that both chemical composition and growth technique affect the defect density and, in turn, the carrier scattering mechanisms. In this regard, charge carrier mobility is analyzed according to semi-empirical scattering models and an interpretation is provided.| File | Dimensione | Formato | |
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Electronic properties of crystalline Ge 1-xSb xTe y thin films.pdf
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