Calvi, S., Bertelli, M., De Simone, S., Maita, F., Prili, S., Diaz Fattorini, A., et al. (2024). Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics. ADVANCED ELECTRONIC MATERIALS [10.1002/aelm.202400184].

Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics

Calvi, Sabrina
;
Prili, Simone;Diaz Fattorini, Adriano;De Matteis, Fabio;Righi Riva, Flavia;Longo, Massimo;Arciprete, Fabrizio
;
2024-01-01

2024
Online ahead of print
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03
English
Con Impact Factor ISI
Other ackoledgements: Italian Ministry of University and Research program “FSE-REACT EU – PON Research and Innovation 2014–2020” (FA, SC), National Recovery and Resilience Plan (NRRP), Mission 4 Component 2 Investment 1.5 (D.M 351, 2022) (FA, ADF), National Recovery and Resilience Plan (NRRP), Mission4 Component 2 Investment 1.5 – Call for tender No. 3277 of 30 December 2021 of the Italian Ministry of University and Research funded by the European Union – NextGenerationEU – Award Number: Project ECS 0000024 Rome Technopole (RC), and Italian Ministry of University and Research (MUR) through project PRIN2020 Emphasis CUP B87G20000160001 (RC,FA, ML, SDS), Grant MUR Dipartimento di Eccellenza 2023-27 X-CHEM project “eXpanding CHEMistry: implementing excellence in research and teaching” (ML).
Calvi, S., Bertelli, M., De Simone, S., Maita, F., Prili, S., Diaz Fattorini, A., et al. (2024). Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics. ADVANCED ELECTRONIC MATERIALS [10.1002/aelm.202400184].
Calvi, S; Bertelli, M; De Simone, S; Maita, F; Prili, S; Diaz Fattorini, A; De Matteis, F; Mussi, V; Righi Riva, F; Longo, M; Arciprete, F; Calarco, R...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/381863
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