This chapter reviews the various strategies for scaling down phase change materials to improve device performance. It reviews the advantages of phase change nanowires (PC-NWs), top-down and bottom-up fabrication processes and characterisation techniques; technological aspects are also considered. Special focus is placed on the self-assembly of NWs by the vapour-liquid-solid mechanisms, including metalorganic chemical vapour deposition. The compositional and structural analysis of NWs is reviewed.
Longo, M. (2014). Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques. In Yoshio Nishi (a cura di), Advances in Non-volatile Memory and Storage Technology (pp. 200-230). ABINGTON HALL ABINGTON, CAMBRIDGE CB1 6AH, CAMBS, ENGLAND : Woodhead Publishing ; Elsevier [10.1533/9780857098092.2.200].
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques
Longo M.
2014-01-01
Abstract
This chapter reviews the various strategies for scaling down phase change materials to improve device performance. It reviews the advantages of phase change nanowires (PC-NWs), top-down and bottom-up fabrication processes and characterisation techniques; technological aspects are also considered. Special focus is placed on the self-assembly of NWs by the vapour-liquid-solid mechanisms, including metalorganic chemical vapour deposition. The compositional and structural analysis of NWs is reviewed.| File | Dimensione | Formato | |
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