The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

Longo, M., Fallica, R., Wiemer, C., Salicio, O., Fanciulli, M., Rotunno, E., et al. (2012). Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires. NANO LETTERS, 12(3), 1509-1515 [10.1021/nl204301h].

Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires

Longo, M.
;
2012-01-01

Abstract

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.
2012
Pubblicato
Rilevanza internazionale
Lettera
Esperti anonimi
Settore FIS/03
English
Con Impact Factor ISI
Ge1Sb2Te4 nanowires; MOCVD; VLS; phase-change memory
Longo, M., Fallica, R., Wiemer, C., Salicio, O., Fanciulli, M., Rotunno, E., et al. (2012). Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires. NANO LETTERS, 12(3), 1509-1515 [10.1021/nl204301h].
Longo, M; Fallica, R; Wiemer, C; Salicio, O; Fanciulli, M; Rotunno, E; Lazzarini, L
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
Metal Organic Chemical Vapor Deposition of Phase Change Gs1Sb2Te4 nanowires.pdf

solo utenti autorizzati

Tipologia: Versione Editoriale (PDF)
Licenza: Copyright dell'editore
Dimensione 3.19 MB
Formato Adobe PDF
3.19 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/349211
Citazioni
  • ???jsp.display-item.citation.pmc??? 2
  • Scopus 32
  • ???jsp.display-item.citation.isi??? 31
social impact