The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.
Longo, M., Fallica, R., Wiemer, C., Salicio, O., Fanciulli, M., Rotunno, E., et al. (2012). Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires. NANO LETTERS, 12(3), 1509-1515 [10.1021/nl204301h].
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires
Longo, M.
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2012-01-01
Abstract
The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.| File | Dimensione | Formato | |
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