Optimization of the structural and optical properties of ZnS epilayers grown on (100) GaAs by MOVPE

The achievement of efficient UV and blue light emitting diodes and lasers is one of the major chal lenges of todays optoelectronics technology. The use of wide bandgap II-VI semiconducting compounds based heterostructures is considered a viable techno logical route to the realization of such devices. Among II-VI materials, ZnS is a potential candidate for applications to devices emitting in the UV and deep-blue spectral region, its room temperature bandgap energy being 3.75 eV. Several attempts have been reported in the literature to the growth of high quality ZnS epilayers by metalorganic vapor phase epitaxy (MOVPE) [1-4].