We performed structural and electrical investigations on high temperature Fe implanted InP in order to correlate the lattice position of the implanted atoms after annealing treatments to their electrical activation as compensating deep traps. The overall results demonstrate that the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the lattice location of the Fe atoms in substitutional sites, which in turn is controlled by the background doping density in the substrates.
Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., et al. (2007). Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation. In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 (pp.241-242). AIP Publishing [10.1063/1.2729858].
Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation
Longo, M.
2007-01-01
Abstract
We performed structural and electrical investigations on high temperature Fe implanted InP in order to correlate the lattice position of the implanted atoms after annealing treatments to their electrical activation as compensating deep traps. The overall results demonstrate that the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the lattice location of the Fe atoms in substitutional sites, which in turn is controlled by the background doping density in the substrates.| File | Dimensione | Formato | |
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Electrical Activation Of Fe Impurities Introduced In III‐V semiconductors by high temp ion implantation.pdf
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