IRIS
SERINO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 19.698
EU - Europa 1.621
AS - Asia 368
Continente sconosciuto - Info sul continente non disponibili 15
SA - Sud America 4
AF - Africa 1
Totale 21.707
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Nazione #
US - Stati Uniti d'America 19.690
UA - Ucraina 298
DE - Germania 296
CN - Cina 249
IT - Italia 221
IE - Irlanda 198
SE - Svezia 151
PL - Polonia 139
FR - Francia 117
FI - Finlandia 63
KR - Corea 63
GB - Regno Unito 62
RU - Federazione Russa 34
IN - India 29
BE - Belgio 18
EU - Europa 14
NL - Olanda 11
CA - Canada 6
JP - Giappone 6
ES - Italia 5
CL - Cile 4
HK - Hong Kong 3
IL - Israele 3
TR - Turchia 3
CZ - Repubblica Ceca 2
MX - Messico 2
RO - Romania 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AT - Austria 1
CH - Svizzera 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MY - Malesia 1
SI - Slovenia 1
TW - Taiwan 1
VN - Vietnam 1
ZA - Sudafrica 1
Totale 21.707
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Città #
Woodbridge 6.482
Wilmington 5.312
Houston 4.926
Ann Arbor 579
Fairfield 393
Chandler 309
Jacksonville 291
Dublin 192
Ashburn 169
Seattle 149
Medford 140
Kraków 136
New York 115
Cambridge 113
Beijing 100
Rome 95
Lawrence 66
Mülheim 58
Dearborn 55
Zhengzhou 52
Menlo Park 40
San Mateo 27
University Park 21
Milan 20
Brussels 18
San Diego 18
Shanghai 16
Saint Petersburg 14
Boardman 12
Hefei 12
Nanjing 12
Verona 12
Redwood City 10
Selargius 9
Hangzhou 8
Amsterdam 7
Paris 7
Norwalk 6
Creede 5
Engelhard 5
Hanover 5
Helsinki 5
London 5
Los Angeles 5
Seoul 5
Cedarhurst 4
Kunming 4
Mcallen 4
Nepi 4
Nürnberg 4
Toronto 4
Xian 4
Andover 3
Ankara 3
Auburn Hills 3
Center 3
Chengdu 3
Jinan 3
Latina 3
Nanchang 3
Ningbo 3
Pisa 3
Poggio Mirteto 3
Shenyang 3
Warsaw 3
Baotou 2
Bengaluru 2
Berlin 2
Casoria 2
Centrale 2
Changsha 2
Colorado Springs 2
Falls Church 2
Frankfurt am Main 2
Fratte 2
Fremont 2
Fuzhou 2
Indiana 2
Kilburn 2
Lucca 2
Madrid 2
Mexico City 2
Monte Vista 2
Monteroni d'Arbia 2
Mountain View 2
Palo Alto 2
Phoenix 2
Pune 2
Rehovot 2
Salt Lake City 2
San Francisco 2
Southend 2
Tappahannock 2
Turin 2
Wanchai 2
Witney 2
Almaty 1
Apo 1
Aquila 1
Bangkok 1
Totale 20.169
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Nome #
GaN device technology: Manufacturing, characterization, modelling and verification 449
X-Band multi-function GaAs MMIC for T/R modules in smart antenna applications 439
Beam forming network GaAs modules radioastronomy focal plane Arrays 426
A 20 watt micro-strip x-band AlGaN/GaN HPA MMIC for advanced radar applications 422
Theoretical investigation and experimental verification of the nonanalytic form of the conversion equations in a frequency divider by two 415
Evaluation of GaN HEMT technology development through nonlinear characterization 413
A new test bench to measure dynamic output I/V Characteristics of FETs 412
GaAs cryo cooled LNA for C-Band radioastronomy applications 404
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 403
A C-Band MMIC chipset for phase and amplitude modulation 403
A GaAs front-end receiver for radioastronomy applicationsx 397
Large-signal modeling of power GaN HEMTs including thermal effects 396
Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors 392
GaAs MMIC chipset for focal-plane arrays 388
Microelettronica a radio frequenza per applicazioni spaziali 386
Modeling of diamond field-effect transistors for RF IC development 378
A medium-power low-noise amplifier for X-band applications 377
A Broadband Self-Biased Monolithic Frequency Doubler for X-Band Applications 377
Time-domain neural network characterization for dynamic behavioral models of power amplifiers 369
Design and measurement of an active cold-load 367
Neural-based nonlinear device models for intermodulation analysis 364
Novel input matching charts for microwave amplifier design 363
Developments on PHAROS 361
Neural network modeling of microwave FETs based on third-order distortion characterization 360
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 358
Determining optimum load impedance for a noisy active 2-port network 357
RF dynamic behavioural model suitable for GaN-HEMT devices 357
A new method for active device load equivalent circuit extraction for MMICs 352
GaAs MMICs for a C-Band FPA 350
Equivalent circuit of FET active loads for non-linear applications 350
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 347
A Measurement-Based Approach to Model Scaling Properties of FETs 346
Microelettronica a radiofrequenza per applicazioni spaziali 345
Time-delay neural networks for nonlinear dynamic behavioral models of power amplifiers 343
A C-Band second harmonic tuned hybrid power GaN-HEMT amplifier: design, fabrication and test 338
Design improvements in distributed amplifiers for optical receiver front ends 337
Design of combined class F power amplifier for X-band applications 337
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 335
Field plate approach to AlGaN/GaN HEMTs for high voltage operation 335
RC-Term correction in the evaluation of parasitic inductances for microwave transistor modelling 334
Design, fabrication and characterisation of gamma gate GaN HEMT for high-frequency/wideband applications 330
Neural networks and volterra series for time-domain PA behavioral models 329
A C-Band MMIC chipset for phase and amplitude modulation 326
A high gain-bandwidth product distributed transimpedance amplifier IC for high-speed optical transmission using low-cost GaAs technology 326
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 324
Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications 321
Reduction of the uncertainty on noise figure measurements 316
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 306
Alternative approach to dynamic I/V characterisation of microwave FETs 305
Broadband monolithic active frequency doubler for x-band satellite communications 300
Very high power, low-cost field-plate GaAs PHEMTs for X-band applications 295
Distortion characterization and neural network modeling for microwave devices 293
Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements 285
GaAs MMIC chipset for focal plane array 284
Accurate microwave characterisation of power ld-mosfets 265
Fabrication and nonlinear characterisation of GaN HEMT on SiC and sapphire for high power applications 259
D-band LNA using a 40-nm GaAs mHEMT technology 258
Charatterisation of active loads for MMIC’s 254
A novel noise model extraction technique for microwave and millimetre wave HEMT 249
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 243
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 214
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 195
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies 181
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices 152
Broadband amplifier design technique by dissipative matching networks 96
A Bound on the Scattering Parameters of Unconditionally Stable N-Ports 36
New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter 27
Source/load-pull noise measurements at ka band 25
The Stability Radius: A New Indicator of Unconditional Stability for N-Port Linear Networks 20
A Transmitter Protection Scheme through Reciprocal Elements 16
On the Simultaneous Conjugate Match of N-Port Networks 13
Checking Rollett's Proviso for Degenerated Devices through S-Parameter Analysis 10
Additional findings on S‐parameter bounds valid for unconditionally stable N‐ports 7
Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier with Gain Control at W-band 6
A Ka-Band Ultra-Low Power GaAs MMIC LNA 2
Totale 21.850
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Categoria #
all - tutte 36.490
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 36.490
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.546 0 0 0 0 0 0 0 0 0 498 481 567
2019/20205.627 496 519 448 527 442 557 461 516 444 435 335 447
2020/20213.281 359 408 401 418 328 365 408 286 81 52 135 40
2021/2022690 15 107 23 47 37 54 27 35 60 52 53 180
2022/2023887 97 54 34 98 78 214 70 72 60 12 77 21
2023/2024318 35 9 18 14 28 135 18 28 7 26 0 0
Totale 21.850