IRIS
SERINO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 19.998
EU - Europa 1.700
AS - Asia 730
Continente sconosciuto - Info sul continente non disponibili 15
SA - Sud America 4
AF - Africa 1
OC - Oceania 1
Totale 22.449
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Nazione #
US - Stati Uniti d'America 19.990
SG - Singapore 359
DE - Germania 301
UA - Ucraina 298
CN - Cina 252
IT - Italia 243
IE - Irlanda 198
SE - Svezia 151
PL - Polonia 139
FR - Francia 118
RU - Federazione Russa 74
FI - Finlandia 68
KR - Corea 63
GB - Regno Unito 62
IN - India 29
BE - Belgio 18
NL - Olanda 16
EU - Europa 14
CA - Canada 6
JP - Giappone 6
ES - Italia 5
CL - Cile 4
CZ - Repubblica Ceca 3
HK - Hong Kong 3
IL - Israele 3
TR - Turchia 3
MX - Messico 2
RO - Romania 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AT - Austria 1
AU - Australia 1
CH - Svizzera 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MY - Malesia 1
SI - Slovenia 1
TW - Taiwan 1
VN - Vietnam 1
ZA - Sudafrica 1
Totale 22.449
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Città #
Woodbridge 6.482
Wilmington 5.312
Houston 4.926
Ann Arbor 579
Fairfield 393
Singapore 323
Chandler 309
Jacksonville 291
Dublin 192
Ashburn 180
Seattle 149
Medford 140
Kraków 136
New York 115
Cambridge 113
Rome 104
Beijing 100
Santa Clara 74
Lawrence 66
Mülheim 58
Dearborn 55
Zhengzhou 52
Menlo Park 40
San Mateo 27
Moscow 23
Boardman 22
Milan 22
University Park 21
Brussels 18
San Diego 18
Shanghai 16
Saint Petersburg 14
Hefei 12
Nanjing 12
Verona 12
Helsinki 10
Redwood City 10
Amsterdam 9
Selargius 9
Engelhard 8
Hangzhou 8
Los Angeles 8
Paris 7
Norwalk 6
Creede 5
Hanover 5
London 5
Seoul 5
Turin 5
Cedarhurst 4
Kunming 4
Mcallen 4
Nepi 4
Nürnberg 4
Toronto 4
Xian 4
Andover 3
Ankara 3
Auburn Hills 3
Center 3
Chengdu 3
Jiaxing 3
Jinan 3
Latina 3
Nanchang 3
Naples 3
Ningbo 3
Nuremberg 3
Pisa 3
Poggio Mirteto 3
Salt Lake City 3
Shenyang 3
The Hague 3
Warsaw 3
Baotou 2
Bengaluru 2
Berlin 2
Casoria 2
Centrale 2
Changsha 2
Colorado Springs 2
Council Bluffs 2
Del Norte 2
Falls Church 2
Frankfurt am Main 2
Fratte 2
Fremont 2
Fuzhou 2
Indiana 2
Kilburn 2
Lucca 2
Madrid 2
Mexico City 2
Monte Vista 2
Monteroni d'Arbia 2
Mountain View 2
Munich 2
Novosibirsk 2
Palo Alto 2
Phoenix 2
Totale 20.640
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Nome #
GaN device technology: Manufacturing, characterization, modelling and verification 456
Beam forming network GaAs modules radioastronomy focal plane Arrays 447
X-Band multi-function GaAs MMIC for T/R modules in smart antenna applications 447
Theoretical investigation and experimental verification of the nonanalytic form of the conversion equations in a frequency divider by two 433
A 20 watt micro-strip x-band AlGaN/GaN HPA MMIC for advanced radar applications 432
A C-Band MMIC chipset for phase and amplitude modulation 422
A new test bench to measure dynamic output I/V Characteristics of FETs 417
Evaluation of GaN HEMT technology development through nonlinear characterization 415
GaAs cryo cooled LNA for C-Band radioastronomy applications 413
Large-signal modeling of power GaN HEMTs including thermal effects 412
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 409
A GaAs front-end receiver for radioastronomy applicationsx 408
GaAs MMIC chipset for focal-plane arrays 403
Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors 397
A medium-power low-noise amplifier for X-band applications 395
Microelettronica a radio frequenza per applicazioni spaziali 393
Modeling of diamond field-effect transistors for RF IC development 383
A Broadband Self-Biased Monolithic Frequency Doubler for X-Band Applications 382
Developments on PHAROS 377
Design and measurement of an active cold-load 374
Time-domain neural network characterization for dynamic behavioral models of power amplifiers 372
Novel input matching charts for microwave amplifier design 372
Neural-based nonlinear device models for intermodulation analysis 369
RF dynamic behavioural model suitable for GaN-HEMT devices 368
Neural network modeling of microwave FETs based on third-order distortion characterization 364
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 363
GaAs MMICs for a C-Band FPA 363
Determining optimum load impedance for a noisy active 2-port network 361
A new method for active device load equivalent circuit extraction for MMICs 357
Equivalent circuit of FET active loads for non-linear applications 357
A C-Band second harmonic tuned hybrid power GaN-HEMT amplifier: design, fabrication and test 356
Microelettronica a radiofrequenza per applicazioni spaziali 355
Design improvements in distributed amplifiers for optical receiver front ends 353
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 350
A Measurement-Based Approach to Model Scaling Properties of FETs 350
Time-delay neural networks for nonlinear dynamic behavioral models of power amplifiers 348
Field plate approach to AlGaN/GaN HEMTs for high voltage operation 345
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 343
Design of combined class F power amplifier for X-band applications 341
RC-Term correction in the evaluation of parasitic inductances for microwave transistor modelling 339
Design, fabrication and characterisation of gamma gate GaN HEMT for high-frequency/wideband applications 338
Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications 337
A C-Band MMIC chipset for phase and amplitude modulation 336
Neural networks and volterra series for time-domain PA behavioral models 332
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 331
A high gain-bandwidth product distributed transimpedance amplifier IC for high-speed optical transmission using low-cost GaAs technology 331
Reduction of the uncertainty on noise figure measurements 322
Broadband monolithic active frequency doubler for x-band satellite communications 316
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 313
Alternative approach to dynamic I/V characterisation of microwave FETs 309
GaAs MMIC chipset for focal plane array 308
Very high power, low-cost field-plate GaAs PHEMTs for X-band applications 304
Distortion characterization and neural network modeling for microwave devices 299
Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements 290
Accurate microwave characterisation of power ld-mosfets 275
D-band LNA using a 40-nm GaAs mHEMT technology 274
Fabrication and nonlinear characterisation of GaN HEMT on SiC and sapphire for high power applications 270
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 265
Charatterisation of active loads for MMIC’s 260
A novel noise model extraction technique for microwave and millimetre wave HEMT 257
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 218
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 205
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies 188
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices 168
Broadband amplifier design technique by dissipative matching networks 103
A Bound on the Scattering Parameters of Unconditionally Stable N-Ports 55
A Transmitter Protection Scheme through Reciprocal Elements 35
New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter 34
Source/load-pull noise measurements at ka band 31
The Stability Radius: A New Indicator of Unconditional Stability for N-Port Linear Networks 30
A C-Band Two-Stage MMIC GaN Power Amplifier for Radar Applications 29
On the Simultaneous Conjugate Match of N-Port Networks 28
Checking Rollett's Proviso for Degenerated Devices through S-Parameter Analysis 24
FET characterization and modeling targeting low-noise W-band applications 13
A Ka-Band Ultra-Low Power GaAs MMIC LNA 11
Additional findings on S‐parameter bounds valid for unconditionally stable N‐ports 10
Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier with Gain Control at W-band 10
Totale 22.600
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Categoria #
all - tutte 41.196
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 41.196
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.164 0 0 0 527 442 557 461 516 444 435 335 447
2020/20213.281 359 408 401 418 328 365 408 286 81 52 135 40
2021/2022690 15 107 23 47 37 54 27 35 60 52 53 180
2022/2023887 97 54 34 98 78 214 70 72 60 12 77 21
2023/2024391 35 9 18 14 28 135 18 28 7 29 9 61
2024/2025677 94 376 194 13 0 0 0 0 0 0 0 0
Totale 22.600