SERINO, ANTONIO
 Distribuzione geografica
Continente #
NA - Nord America 20.099
EU - Europa 1.809
AS - Asia 992
SA - Sud America 63
Continente sconosciuto - Info sul continente non disponibili 15
AF - Africa 5
OC - Oceania 2
Totale 22.985
Nazione #
US - Stati Uniti d'America 20.084
SG - Singapore 489
DE - Germania 310
UA - Ucraina 298
IT - Italia 267
CN - Cina 261
IE - Irlanda 198
SE - Svezia 151
PL - Polonia 139
RU - Federazione Russa 129
FR - Francia 118
HK - Hong Kong 113
FI - Finlandia 69
GB - Regno Unito 63
KR - Corea 63
BR - Brasile 52
IN - India 29
NL - Olanda 28
BE - Belgio 18
EU - Europa 14
CA - Canada 7
JP - Giappone 7
MX - Messico 6
ES - Italia 5
TR - Turchia 5
CL - Cile 4
AR - Argentina 3
CZ - Repubblica Ceca 3
ID - Indonesia 3
IL - Israele 3
AL - Albania 2
AT - Austria 2
CH - Svizzera 2
PK - Pakistan 2
RO - Romania 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
CO - Colombia 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
HU - Ungheria 1
IQ - Iraq 1
IR - Iran 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MD - Moldavia 1
MY - Malesia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PA - Panama 1
PE - Perù 1
PH - Filippine 1
PY - Paraguay 1
RS - Serbia 1
SA - Arabia Saudita 1
SI - Slovenia 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
VE - Venezuela 1
VN - Vietnam 1
ZA - Sudafrica 1
Totale 22.985
Città #
Woodbridge 6.482
Wilmington 5.312
Houston 4.926
Ann Arbor 579
Fairfield 393
Singapore 364
Chandler 309
Jacksonville 291
Dublin 192
Ashburn 187
Seattle 149
Medford 140
Kraków 136
New York 115
Cambridge 113
Rome 111
Hong Kong 110
Beijing 102
Santa Clara 74
Lawrence 66
Mülheim 58
Dearborn 55
Zhengzhou 52
Menlo Park 40
San Mateo 27
Council Bluffs 24
Moscow 23
Boardman 22
Milan 22
The Dalles 22
University Park 21
Brussels 18
San Diego 18
Shanghai 16
Saint Petersburg 14
Hefei 12
Nanjing 12
Verona 12
Amsterdam 11
Los Angeles 11
Helsinki 10
Redwood City 10
Selargius 9
Engelhard 8
Hangzhou 8
Nuremberg 8
Paris 7
North Bergen 6
Norwalk 6
Creede 5
Hanover 5
London 5
Naples 5
Rio de Janeiro 5
Seoul 5
Toronto 5
Turin 5
Cedarhurst 4
Guangzhou 4
Kunming 4
Mcallen 4
Nepi 4
Nürnberg 4
Xian 4
Andover 3
Ankara 3
Auburn Hills 3
Center 3
Chengdu 3
Frankfurt am Main 3
Jiaxing 3
Jinan 3
Latina 3
Nanchang 3
Newark 3
Ningbo 3
Pisa 3
Poggio Mirteto 3
Salt Lake City 3
Shenyang 3
São Paulo 3
The Hague 3
Warsaw 3
Baotou 2
Bari 2
Belo Horizonte 2
Bengaluru 2
Berlin 2
Caruaru 2
Casoria 2
Centrale 2
Changsha 2
Colorado Springs 2
Del Norte 2
Falls Church 2
Fratte 2
Fremont 2
Fuzhou 2
Indiana 2
Jakarta 2
Totale 20.872
Nome #
GaN device technology: Manufacturing, characterization, modelling and verification 461
Beam forming network GaAs modules radioastronomy focal plane Arrays 456
X-Band multi-function GaAs MMIC for T/R modules in smart antenna applications 451
A 20 watt micro-strip x-band AlGaN/GaN HPA MMIC for advanced radar applications 442
Theoretical investigation and experimental verification of the nonanalytic form of the conversion equations in a frequency divider by two 437
A C-Band MMIC chipset for phase and amplitude modulation 435
GaAs cryo cooled LNA for C-Band radioastronomy applications 429
A new test bench to measure dynamic output I/V Characteristics of FETs 427
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 426
Evaluation of GaN HEMT technology development through nonlinear characterization 421
Large-signal modeling of power GaN HEMTs including thermal effects 417
A GaAs front-end receiver for radioastronomy applicationsx 416
GaAs MMIC chipset for focal-plane arrays 404
Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors 403
Microelettronica a radio frequenza per applicazioni spaziali 402
A medium-power low-noise amplifier for X-band applications 398
A Broadband Self-Biased Monolithic Frequency Doubler for X-Band Applications 391
Modeling of diamond field-effect transistors for RF IC development 387
Developments on PHAROS 379
Time-domain neural network characterization for dynamic behavioral models of power amplifiers 378
Design and measurement of an active cold-load 378
Neural-based nonlinear device models for intermodulation analysis 377
Novel input matching charts for microwave amplifier design 376
RF dynamic behavioural model suitable for GaN-HEMT devices 371
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 369
Neural network modeling of microwave FETs based on third-order distortion characterization 369
A C-Band second harmonic tuned hybrid power GaN-HEMT amplifier: design, fabrication and test 367
GaAs MMICs for a C-Band FPA 367
Determining optimum load impedance for a noisy active 2-port network 366
A new method for active device load equivalent circuit extraction for MMICs 361
A Measurement-Based Approach to Model Scaling Properties of FETs 361
Microelettronica a radiofrequenza per applicazioni spaziali 360
Design improvements in distributed amplifiers for optical receiver front ends 359
Equivalent circuit of FET active loads for non-linear applications 358
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 356
Field plate approach to AlGaN/GaN HEMTs for high voltage operation 355
Time-delay neural networks for nonlinear dynamic behavioral models of power amplifiers 352
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 348
Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications 347
A C-Band MMIC chipset for phase and amplitude modulation 346
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 345
Design of combined class F power amplifier for X-band applications 345
Neural networks and volterra series for time-domain PA behavioral models 344
Design, fabrication and characterisation of gamma gate GaN HEMT for high-frequency/wideband applications 344
A high gain-bandwidth product distributed transimpedance amplifier IC for high-speed optical transmission using low-cost GaAs technology 341
RC-Term correction in the evaluation of parasitic inductances for microwave transistor modelling 341
Reduction of the uncertainty on noise figure measurements 328
Broadband monolithic active frequency doubler for x-band satellite communications 321
Alternative approach to dynamic I/V characterisation of microwave FETs 316
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 316
GaAs MMIC chipset for focal plane array 311
Very high power, low-cost field-plate GaAs PHEMTs for X-band applications 310
Distortion characterization and neural network modeling for microwave devices 307
Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements 293
Accurate microwave characterisation of power ld-mosfets 279
D-band LNA using a 40-nm GaAs mHEMT technology 278
Fabrication and nonlinear characterisation of GaN HEMT on SiC and sapphire for high power applications 276
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 272
Charatterisation of active loads for MMIC’s 265
A novel noise model extraction technique for microwave and millimetre wave HEMT 262
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 221
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 211
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies 196
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices 174
Broadband amplifier design technique by dissipative matching networks 110
A Bound on the Scattering Parameters of Unconditionally Stable N-Ports 67
New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter 42
Source/load-pull noise measurements at ka band 39
A Transmitter Protection Scheme through Reciprocal Elements 38
A C-Band Two-Stage MMIC GaN Power Amplifier for Radar Applications 36
On the Simultaneous Conjugate Match of N-Port Networks 34
Checking Rollett's Proviso for Degenerated Devices through S-Parameter Analysis 33
The Stability Radius: A New Indicator of Unconditional Stability for N-Port Linear Networks 32
FET characterization and modeling targeting low-noise W-band applications 23
A Ka-Band Ultra-Low Power GaAs MMIC LNA 22
Additional findings on S‐parameter bounds valid for unconditionally stable N‐ports 15
A Ku-band MMIC two-stage GaAs-based Low Noise Amplifier for radar applications 15
High sensitivity mm-wave front-end design approaches (invited) 14
Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier with Gain Control at W-band 14
On the equivalence of network representations in relation to stability analysis 9
On the fulfilment of the gain and matching specifications in the design of a single-stage high-frequency amplifier 7
Broadband low-noise amplifier based on unconventional matching networks 4
Totale 23.153
Categoria #
all - tutte 45.913
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 45.913


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.217 0 0 0 0 0 0 0 0 0 435 335 447
2020/20213.281 359 408 401 418 328 365 408 286 81 52 135 40
2021/2022690 15 107 23 47 37 54 27 35 60 52 53 180
2022/2023887 97 54 34 98 78 214 70 72 60 12 77 21
2023/2024391 35 9 18 14 28 135 18 28 7 29 9 61
2024/20251.230 94 376 194 87 23 110 141 69 117 19 0 0
Totale 23.153