IRIS
SERINO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 20.024
EU - Europa 1.774
AS - Asia 771
Continente sconosciuto - Info sul continente non disponibili 15
SA - Sud America 4
OC - Oceania 2
AF - Africa 1
Totale 22.591
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Nazione #
US - Stati Uniti d'America 20.014
SG - Singapore 390
DE - Germania 303
UA - Ucraina 298
CN - Cina 255
IT - Italia 250
IE - Irlanda 198
SE - Svezia 151
PL - Polonia 139
RU - Federazione Russa 128
FR - Francia 118
FI - Finlandia 69
GB - Regno Unito 63
KR - Corea 63
IN - India 29
NL - Olanda 23
BE - Belgio 18
EU - Europa 14
CA - Canada 7
JP - Giappone 6
ES - Italia 5
HK - Hong Kong 5
CL - Cile 4
CZ - Repubblica Ceca 3
ID - Indonesia 3
IL - Israele 3
TR - Turchia 3
CH - Svizzera 2
MX - Messico 2
RO - Romania 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AL - Albania 1
AM - Armenia 1
AT - Austria 1
AU - Australia 1
HU - Ungheria 1
IR - Iran 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PH - Filippine 1
PK - Pakistan 1
SI - Slovenia 1
TW - Taiwan 1
VN - Vietnam 1
ZA - Sudafrica 1
Totale 22.591
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Città #
Woodbridge 6.482
Wilmington 5.312
Houston 4.926
Ann Arbor 579
Fairfield 393
Singapore 354
Chandler 309
Jacksonville 291
Dublin 192
Ashburn 186
Seattle 149
Medford 140
Kraków 136
New York 115
Cambridge 113
Rome 104
Beijing 100
Santa Clara 74
Lawrence 66
Mülheim 58
Dearborn 55
Zhengzhou 52
Menlo Park 40
San Mateo 27
Moscow 23
Boardman 22
Milan 22
University Park 21
Brussels 18
San Diego 18
Shanghai 16
Saint Petersburg 14
Hefei 12
Nanjing 12
Verona 12
Amsterdam 11
Los Angeles 11
Helsinki 10
Redwood City 10
Selargius 9
Engelhard 8
Hangzhou 8
Paris 7
Norwalk 6
Creede 5
Hanover 5
London 5
Seoul 5
Toronto 5
Turin 5
Cedarhurst 4
Kunming 4
Mcallen 4
Nepi 4
Nürnberg 4
Xian 4
Andover 3
Ankara 3
Auburn Hills 3
Center 3
Chengdu 3
Frankfurt am Main 3
Jiaxing 3
Jinan 3
Latina 3
Nanchang 3
Naples 3
Newark 3
Ningbo 3
Nuremberg 3
Pisa 3
Poggio Mirteto 3
Salt Lake City 3
Shenyang 3
The Hague 3
Warsaw 3
Baotou 2
Bengaluru 2
Berlin 2
Casoria 2
Centrale 2
Changsha 2
Colorado Springs 2
Council Bluffs 2
Del Norte 2
Falls Church 2
Fratte 2
Fremont 2
Fuzhou 2
Hong Kong 2
Indiana 2
Jakarta 2
Kilburn 2
Lucca 2
Madrid 2
Mexico City 2
Monte Vista 2
Monteroni d'Arbia 2
Mountain View 2
Munich 2
Totale 20.685
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Nome #
GaN device technology: Manufacturing, characterization, modelling and verification 457
Beam forming network GaAs modules radioastronomy focal plane Arrays 452
X-Band multi-function GaAs MMIC for T/R modules in smart antenna applications 447
A 20 watt micro-strip x-band AlGaN/GaN HPA MMIC for advanced radar applications 434
Theoretical investigation and experimental verification of the nonanalytic form of the conversion equations in a frequency divider by two 434
A C-Band MMIC chipset for phase and amplitude modulation 426
A new test bench to measure dynamic output I/V Characteristics of FETs 420
GaAs cryo cooled LNA for C-Band radioastronomy applications 417
Evaluation of GaN HEMT technology development through nonlinear characterization 416
Large-signal modeling of power GaN HEMTs including thermal effects 413
A GaAs front-end receiver for radioastronomy applicationsx 411
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 411
GaAs MMIC chipset for focal-plane arrays 403
A medium-power low-noise amplifier for X-band applications 398
Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors 398
Microelettronica a radio frequenza per applicazioni spaziali 395
A Broadband Self-Biased Monolithic Frequency Doubler for X-Band Applications 385
Modeling of diamond field-effect transistors for RF IC development 384
Developments on PHAROS 378
Design and measurement of an active cold-load 375
Time-domain neural network characterization for dynamic behavioral models of power amplifiers 373
Novel input matching charts for microwave amplifier design 373
Neural-based nonlinear device models for intermodulation analysis 370
RF dynamic behavioural model suitable for GaN-HEMT devices 368
Neural network modeling of microwave FETs based on third-order distortion characterization 366
GaAs MMICs for a C-Band FPA 364
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 363
Determining optimum load impedance for a noisy active 2-port network 361
A C-Band second harmonic tuned hybrid power GaN-HEMT amplifier: design, fabrication and test 360
A new method for active device load equivalent circuit extraction for MMICs 359
Equivalent circuit of FET active loads for non-linear applications 357
Microelettronica a radiofrequenza per applicazioni spaziali 355
Design improvements in distributed amplifiers for optical receiver front ends 354
A Measurement-Based Approach to Model Scaling Properties of FETs 352
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 351
Time-delay neural networks for nonlinear dynamic behavioral models of power amplifiers 349
Field plate approach to AlGaN/GaN HEMTs for high voltage operation 349
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 344
Design of combined class F power amplifier for X-band applications 342
Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications 340
A C-Band MMIC chipset for phase and amplitude modulation 339
Design, fabrication and characterisation of gamma gate GaN HEMT for high-frequency/wideband applications 339
RC-Term correction in the evaluation of parasitic inductances for microwave transistor modelling 339
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 335
Neural networks and volterra series for time-domain PA behavioral models 334
A high gain-bandwidth product distributed transimpedance amplifier IC for high-speed optical transmission using low-cost GaAs technology 334
Reduction of the uncertainty on noise figure measurements 325
Broadband monolithic active frequency doubler for x-band satellite communications 318
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 314
Alternative approach to dynamic I/V characterisation of microwave FETs 310
GaAs MMIC chipset for focal plane array 308
Very high power, low-cost field-plate GaAs PHEMTs for X-band applications 305
Distortion characterization and neural network modeling for microwave devices 300
Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements 290
D-band LNA using a 40-nm GaAs mHEMT technology 276
Accurate microwave characterisation of power ld-mosfets 275
Fabrication and nonlinear characterisation of GaN HEMT on SiC and sapphire for high power applications 271
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 267
Charatterisation of active loads for MMIC’s 261
A novel noise model extraction technique for microwave and millimetre wave HEMT 260
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 218
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 207
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies 189
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices 170
Broadband amplifier design technique by dissipative matching networks 104
A Bound on the Scattering Parameters of Unconditionally Stable N-Ports 60
A Transmitter Protection Scheme through Reciprocal Elements 37
Source/load-pull noise measurements at ka band 35
New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter 34
The Stability Radius: A New Indicator of Unconditional Stability for N-Port Linear Networks 31
A C-Band Two-Stage MMIC GaN Power Amplifier for Radar Applications 31
On the Simultaneous Conjugate Match of N-Port Networks 30
Checking Rollett's Proviso for Degenerated Devices through S-Parameter Analysis 27
FET characterization and modeling targeting low-noise W-band applications 21
A Ka-Band Ultra-Low Power GaAs MMIC LNA 14
Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier with Gain Control at W-band 12
Additional findings on S‐parameter bounds valid for unconditionally stable N‐ports 11
A Ku-band MMIC two-stage GaAs-based Low Noise Amplifier for radar applications 11
On the fulfilment of the gain and matching specifications in the design of a single-stage high-frequency amplifier 3
High Sensitivity mm-Wave Front-End Design Approaches (Invited) 1
On the Equivalence of Network Representations in Relation to Stability Analysis 1
Totale 22.751
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Categoria #
all - tutte 43.334
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.334
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.195 0 0 0 0 0 557 461 516 444 435 335 447
2020/20213.281 359 408 401 418 328 365 408 286 81 52 135 40
2021/2022690 15 107 23 47 37 54 27 35 60 52 53 180
2022/2023887 97 54 34 98 78 214 70 72 60 12 77 21
2023/2024391 35 9 18 14 28 135 18 28 7 29 9 61
2024/2025828 94 376 194 87 23 54 0 0 0 0 0 0
Totale 22.751