IRIS
SERINO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 22.491
AS - Asia 2.472
EU - Europa 2.437
SA - Sud America 318
Continente sconosciuto - Info sul continente non disponibili 224
AF - Africa 39
OC - Oceania 6
Totale 27.987
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Nazione #
US - Stati Uniti d'America 22.384
SG - Singapore 1.028
CN - Cina 551
IT - Italia 444
DE - Germania 340
RU - Federazione Russa 305
UA - Ucraina 305
BR - Brasile 255
VN - Vietnam 213
IE - Irlanda 199
HK - Hong Kong 191
SE - Svezia 183
FR - Francia 167
PL - Polonia 156
BD - Bangladesh 124
GB - Regno Unito 119
JP - Giappone 104
FI - Finlandia 86
IN - India 67
KR - Corea 64
CA - Canada 54
NL - Olanda 45
ES - Italia 27
MX - Messico 23
AR - Argentina 19
BE - Belgio 18
TR - Turchia 18
TW - Taiwan 18
ZA - Sudafrica 15
EU - Europa 14
ID - Indonesia 13
IQ - Iraq 12
CL - Cile 11
EC - Ecuador 11
LT - Lituania 10
PK - Pakistan 9
CO - Colombia 8
JM - Giamaica 8
MA - Marocco 8
AE - Emirati Arabi Uniti 6
AT - Austria 6
CH - Svizzera 6
TH - Thailandia 6
HN - Honduras 5
NI - Nicaragua 5
PH - Filippine 5
SA - Arabia Saudita 5
UZ - Uzbekistan 5
AU - Australia 4
IL - Israele 4
MY - Malesia 4
PE - Perù 4
VE - Venezuela 4
CZ - Repubblica Ceca 3
DZ - Algeria 3
KE - Kenya 3
OM - Oman 3
TN - Tunisia 3
AL - Albania 2
AM - Armenia 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
CR - Costa Rica 2
CY - Cipro 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
GR - Grecia 2
HR - Croazia 2
IR - Iran 2
JO - Giordania 2
MD - Moldavia 2
NP - Nepal 2
PA - Panama 2
PY - Paraguay 2
RO - Romania 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
BY - Bielorussia 1
BZ - Belize 1
EG - Egitto 1
GA - Gabon 1
GE - Georgia 1
HU - Ungheria 1
KG - Kirghizistan 1
KH - Cambogia 1
KI - Kiribati 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
Totale 27.772
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Città #
Woodbridge 6.482
Wilmington 5.322
Houston 4.932
Singapore 613
Ann Arbor 580
San Jose 539
Ashburn 414
Fairfield 393
Chandler 309
Jacksonville 296
Beijing 237
Dublin 193
Hong Kong 185
New York 171
Seattle 155
Los Angeles 148
Council Bluffs 142
Medford 140
Rome 140
Kraków 136
Chicago 117
Cambridge 114
Santa Clara 108
Tokyo 97
The Dalles 86
Ho Chi Minh City 68
Lawrence 66
Buffalo 59
Mülheim 58
Dearborn 55
Hanoi 53
Zhengzhou 53
Salt Lake City 50
Dallas 43
Menlo Park 40
Milan 40
Moscow 39
São Paulo 34
San Mateo 28
Boardman 24
Phoenix 24
Tampa 24
Elk Grove Village 21
University Park 21
Brooklyn 20
Munich 20
Nanjing 20
Shanghai 20
San Diego 19
Suzhou 19
Atlanta 18
Brussels 18
London 18
Warsaw 18
Amsterdam 17
Helsinki 17
Miami 17
Montreal 15
Alamosa 14
Chennai 14
Naples 14
Saint Petersburg 14
Verona 14
Frankfurt am Main 13
Orem 13
Boston 12
Denver 12
Hefei 12
Lancaster 12
Hangzhou 11
Rio de Janeiro 11
Sterling 11
Taipei 11
Da Nang 10
Grottaferrata 10
Lauterbourg 10
Manchester 10
North Bergen 10
Paris 10
Redondo Beach 10
Redwood City 10
Toronto 10
Ankara 9
Johannesburg 9
Mexico City 9
Nuremberg 9
San Francisco 9
Selargius 9
Engelhard 8
Haiphong 8
Monte Vista 8
Philadelphia 8
Chongqing 7
Kingston 7
Madrid 7
Newark 7
Poplar 7
Stockholm 7
Cincinnati 6
Lappeenranta 6
Totale 23.523
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Nome #
Theoretical investigation and experimental verification of the nonanalytic form of the conversion equations in a frequency divider by two 507
Beam forming network GaAs modules radioastronomy focal plane Arrays 506
GaN device technology: Manufacturing, characterization, modelling and verification 494
A 20 watt micro-strip x-band AlGaN/GaN HPA MMIC for advanced radar applications 494
A C-Band MMIC chipset for phase and amplitude modulation 490
X-Band multi-function GaAs MMIC for T/R modules in smart antenna applications 490
A GaAs front-end receiver for radioastronomy applicationsx 486
GaAs cryo cooled LNA for C-Band radioastronomy applications 473
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 473
A new test bench to measure dynamic output I/V Characteristics of FETs 470
Evaluation of GaN HEMT technology development through nonlinear characterization 451
A medium-power low-noise amplifier for X-band applications 450
Large-signal modeling of power GaN HEMTs including thermal effects 450
GaAs MMIC chipset for focal-plane arrays 448
A Broadband Self-Biased Monolithic Frequency Doubler for X-Band Applications 444
Microelettronica a radio frequenza per applicazioni spaziali 437
Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors 437
Modeling of diamond field-effect transistors for RF IC development 430
Neural-based nonlinear device models for intermodulation analysis 429
Developments on PHAROS 422
A C-Band second harmonic tuned hybrid power GaN-HEMT amplifier: design, fabrication and test 421
Design and measurement of an active cold-load 417
Source/load-pull noise measurements at ka band 415
Time-domain neural network characterization for dynamic behavioral models of power amplifiers 411
A Measurement-Based Approach to Model Scaling Properties of FETs 409
Novel input matching charts for microwave amplifier design 408
Neural network modeling of microwave FETs based on third-order distortion characterization 407
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 404
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 402
Microelettronica a radiofrequenza per applicazioni spaziali 402
RF dynamic behavioural model suitable for GaN-HEMT devices 402
A C-Band MMIC chipset for phase and amplitude modulation 402
GaAs MMICs for a C-Band FPA 402
Determining optimum load impedance for a noisy active 2-port network 401
A new method for active device load equivalent circuit extraction for MMICs 401
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology 399
Field plate approach to AlGaN/GaN HEMTs for high voltage operation 399
A high gain-bandwidth product distributed transimpedance amplifier IC for high-speed optical transmission using low-cost GaAs technology 396
Design improvements in distributed amplifiers for optical receiver front ends 393
Design, fabrication and characterisation of gamma gate GaN HEMT for high-frequency/wideband applications 393
Equivalent circuit of FET active loads for non-linear applications 393
Time-delay neural networks for nonlinear dynamic behavioral models of power amplifiers 392
Neural networks and volterra series for time-domain PA behavioral models 391
Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications 390
Design of combined class F power amplifier for X-band applications 389
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 381
RC-Term correction in the evaluation of parasitic inductances for microwave transistor modelling 381
Reduction of the uncertainty on noise figure measurements 370
Broadband monolithic active frequency doubler for x-band satellite communications 356
Distortion characterization and neural network modeling for microwave devices 353
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 350
Alternative approach to dynamic I/V characterisation of microwave FETs 347
GaAs MMIC chipset for focal plane array 347
Very high power, low-cost field-plate GaAs PHEMTs for X-band applications 346
D-band LNA using a 40-nm GaAs mHEMT technology 342
A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match 341
Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements 329
Fabrication and nonlinear characterisation of GaN HEMT on SiC and sapphire for high power applications 328
Accurate microwave characterisation of power ld-mosfets 315
A novel noise model extraction technique for microwave and millimetre wave HEMT 311
Charatterisation of active loads for MMIC’s 290
Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements 269
MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art 264
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies 238
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices 225
Broadband amplifier design technique by dissipative matching networks 151
A Bound on the Scattering Parameters of Unconditionally Stable N-Ports 126
A Ku-band MMIC two-stage GaAs-based Low Noise Amplifier for radar applications 117
4.1-dB noise figure and 20-dB gain 92–115-GHz GaAs LNA with hot via interconnections 116
A Ka-Band Ultra-Low Power GaAs MMIC LNA 103
A C-Band Two-Stage MMIC GaN Power Amplifier for Radar Applications 103
On the Simultaneous Conjugate Match of N-Port Networks 93
A 10 W ultra-wideband MMIC HPA for EW applications 83
The Stability Radius: A New Indicator of Unconditional Stability for N-Port Linear Networks 81
Broadband low-noise amplifier based on unconventional matching networks 79
FET characterization and modeling targeting low-noise W-band applications 78
Temperature behaviour analysis of a GaN LNA under harsh environmental conditions for telecommunications 78
A Transmitter Protection Scheme through Reciprocal Elements 77
New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter 77
Design methodology and robustness analysis of a 13–15 GHz three-stage low-noise amplifier in pHEMT GaAs technology 74
Checking Rollett's Proviso for Degenerated Devices through S-Parameter Analysis 68
On the equivalence of network representations in relation to stability analysis 67
Frequency-bounded matching strategy for wideband LNA design utilising a relaxed SSNM approach 62
High sensitivity mm-wave front-end design approaches (invited) 62
High-efficiency C/X dual-band HPA in 250-nm gate length GaN HEMT technology with 10W Pout 62
Additional findings on S‐parameter bounds valid for unconditionally stable N‐ports 59
First demonstration of MMIC Low-Noise Amplifiers operating at Ka-band realized with Enhancement-mode Gallium Nitride HEMTs 57
Insight into optimally noise- and signal-matched three-stage LNAs and effect of inter-stage mismatch 54
Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier with Gain Control at W-band 52
A 0.4-2 GHz MMIC LNA with Integrated Limiter 51
On the fulfilment of the gain and matching specifications in the design of a single-stage high-frequency amplifier 44
Impact of incomplete conversion data extraction on large-signal stability analysis 42
Global convergence of a blind iterative algorithm for simultaneous conjugate match of N-ports 39
Gallium Nitride Switchless PALNA MMIC Operating at Ka-Band Showing Typical 31 dBm Output Power and 4.5 dB Noise Figure 24
On the Theoretical Limits of Gain and Matching in Single‐Stage High‐Frequency Amplifiers 5
Totale 27.987
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Categoria #
all - tutte 63.906
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 63.906
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022568 0 0 23 47 37 54 27 35 60 52 53 180
2022/2023887 97 54 34 98 78 214 70 72 60 12 77 21
2023/2024391 35 9 18 14 28 135 18 28 7 29 9 61
2024/20251.929 94 376 194 87 23 110 141 69 117 108 294 316
2025/20263.537 251 282 295 283 373 106 355 387 399 399 186 221
2026/2027598 199 233 166 0 0 0 0 0 0 0 0 0
Totale 27.987