FET-based active loads have been fabricated and tested, and their equivalent circuit extracted for linear and non-linear applications. The extraction procedure requires the availability of an equivalent three-terminal FET device for accurate model identification. The model proves to be easy to extract, accurate and general.

Leuzzi, G., Serino, A., Giannini, F. (1998). Equivalent circuit of FET active loads for non-linear applications. In 1998 European Gallium Arsenide and Related III-V Compounds Application Symposium Proceedings (pp.313-317).

Equivalent circuit of FET active loads for non-linear applications

SERINO, ANTONIO;GIANNINI, FRANCO
1998-10-01

Abstract

FET-based active loads have been fabricated and tested, and their equivalent circuit extracted for linear and non-linear applications. The extraction procedure requires the availability of an equivalent three-terminal FET device for accurate model identification. The model proves to be easy to extract, accurate and general.
European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS 1998
Amsterdam
1998
Rilevanza internazionale
contributo
ott-1998
Settore ING-INF/01 - ELETTRONICA
English
Intervento a convegno
Leuzzi, G., Serino, A., Giannini, F. (1998). Equivalent circuit of FET active loads for non-linear applications. In 1998 European Gallium Arsenide and Related III-V Compounds Application Symposium Proceedings (pp.313-317).
Leuzzi, G; Serino, A; Giannini, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/41063
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