This paper presents a Ku-band Low-Noise Amplifier (LNA) operating between 13-17 GHz. The two-stage topology design approach aims to optimize the trade-off among power consumption, overall gain and noise performances, leading to the achievement of a linear gain better than 23.2 dB and a Noise Figure lower than 2dB throughout the operative bandwidth. The LNA provides also a challenging OP1dB higher than 18 dBm and a very low power consumption of 400 mW when compared to the state of the art. The MMIC LNA has been designed and fabricated using the 0.15 ?m GaAs E-Mode HEMT process by WIN Semiconductor.
Forte, A., Longhi, P.e., Ciccognani, W., Colangeli, S., Serino, A., Limiti, E. (2024). A Ku-band MMIC two-stage GaAs-based Low Noise Amplifier for radar applications. In 2024 19th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2024 (pp.1-4). Piscataway : IEEE [10.1109/PRIME61930.2024.10559714].
A Ku-band MMIC two-stage GaAs-based Low Noise Amplifier for radar applications
Forte A.Writing – Original Draft Preparation
;Longhi P. E.;Ciccognani W.;Colangeli S.;Serino A.;Limiti E.
2024-01-01
Abstract
This paper presents a Ku-band Low-Noise Amplifier (LNA) operating between 13-17 GHz. The two-stage topology design approach aims to optimize the trade-off among power consumption, overall gain and noise performances, leading to the achievement of a linear gain better than 23.2 dB and a Noise Figure lower than 2dB throughout the operative bandwidth. The LNA provides also a challenging OP1dB higher than 18 dBm and a very low power consumption of 400 mW when compared to the state of the art. The MMIC LNA has been designed and fabricated using the 0.15 ?m GaAs E-Mode HEMT process by WIN Semiconductor.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
