In this paper a procedure to extract temperature dependent equivalent circuits for modeling the small and large signal behavior of GaN HEMTs is presented. The technique explained in this work uses pulsed I-V measurements to obtain the temperature dependence of the parameters describing the nonlinear drain current source behavior. The equivalent circuits extracted are capable of correctly modeling the DC, small signal and large signal characteristics of GaN HEMTs devices. Simulations and measurements carried out on three transistors developed by SELEX-SI are compared over a wide range of frequencies, bias and load conditions.
Torregrosa, G., Grajal, J., Peroni, M., Serino, A., Nanni, A., Cetronio, A. (2007). Large-signal modeling of power GaN HEMTs including thermal effects. In 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 (pp.36-39) [10.1109/EMICC.2007.4412641].
Large-signal modeling of power GaN HEMTs including thermal effects
SERINO, ANTONIO;
2007-10-01
Abstract
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the small and large signal behavior of GaN HEMTs is presented. The technique explained in this work uses pulsed I-V measurements to obtain the temperature dependence of the parameters describing the nonlinear drain current source behavior. The equivalent circuits extracted are capable of correctly modeling the DC, small signal and large signal characteristics of GaN HEMTs devices. Simulations and measurements carried out on three transistors developed by SELEX-SI are compared over a wide range of frequencies, bias and load conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
