An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure. The model is intended for applications to high-efficiency power amplifiers in the low microwave region. The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination. The model differs from the standard BSIM3 or MODEL9 models, ensuring accurate high-frequency performances.
Giannini, F., Graglia, F., Leuzzi, G., Serino, A. (2000). Accurate microwave characterisation of power ld-mosfets. In Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2000, Conference Proceedings (pp.165-168).
Accurate microwave characterisation of power ld-mosfets
GIANNINI, FRANCO;SERINO, ANTONIO
2000-10-01
Abstract
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure. The model is intended for applications to high-efficiency power amplifiers in the low microwave region. The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination. The model differs from the standard BSIM3 or MODEL9 models, ensuring accurate high-frequency performances.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.