An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure. The model is intended for applications to high-efficiency power amplifiers in the low microwave region. The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination. The model differs from the standard BSIM3 or MODEL9 models, ensuring accurate high-frequency performances.

Giannini, F., Graglia, F., Leuzzi, G., Serino, A. (2000). Accurate microwave characterisation of power ld-mosfets. In Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2000, Conference Proceedings (pp.165-168).

Accurate microwave characterisation of power ld-mosfets

GIANNINI, FRANCO;SERINO, ANTONIO
2000-10-01

Abstract

An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure. The model is intended for applications to high-efficiency power amplifiers in the low microwave region. The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination. The model differs from the standard BSIM3 or MODEL9 models, ensuring accurate high-frequency performances.
Gallium Arsenide and other semiconductors application symposium, GAAS 2000
Parigi
2000
Rilevanza internazionale
contributo
ott-2000
Settore ING-INF/01 - ELETTRONICA
English
Intervento a convegno
Giannini, F., Graglia, F., Leuzzi, G., Serino, A. (2000). Accurate microwave characterisation of power ld-mosfets. In Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2000, Conference Proceedings (pp.165-168).
Giannini, F; Graglia, F; Leuzzi, G; Serino, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/41062
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