In this paper, the design, fabrication, and test of highefficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The amplifier has been designed utilizing second-harmonic tuning for high-efficiency operation, thus exploiting the high-breakdown voltage peculiarity of GaN-based devices. Realized in a hybrid form, the amplifier has been characterized in terms of small-signal, power, and intermodulation (IMD) performance. An operating bandwidth over 20% around 5.5 GHz, with 33-dBm minimum output power, and 60% drain efficiency at center frequency is demonstrated, together with low IMD.
Colantonio, P., Giannini, F., Giofre', R., Limiti, E., Serino, A., Peroni, M., et al. (2006). A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 54(6), 2713-2722 [10.1109/TMTT.2006.874872].
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology
COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;LIMITI, ERNESTO;SERINO, ANTONIO;
2006-06-01
Abstract
In this paper, the design, fabrication, and test of highefficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The amplifier has been designed utilizing second-harmonic tuning for high-efficiency operation, thus exploiting the high-breakdown voltage peculiarity of GaN-based devices. Realized in a hybrid form, the amplifier has been characterized in terms of small-signal, power, and intermodulation (IMD) performance. An operating bandwidth over 20% around 5.5 GHz, with 33-dBm minimum output power, and 60% drain efficiency at center frequency is demonstrated, together with low IMD.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
