A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the Y-parameters and two equivalent noise temperatures, is presented. The method requires only the measured small-signal parameters and 50Ω noise figure, thus avoiding the extraction of the small-signal equivalent circuit. It is particularly suitable for noise characterization of coplanar devices. Good agreement with the results of more conventional methods is demonstrated in a wide frequency range.
De Dominicis, M., Giannini, F., Limiti, E., Serino, A. (2005). Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 44(6), 565-569 [10.1002/mop.20698].
Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements
GIANNINI, FRANCO;LIMITI, ERNESTO;SERINO, ANTONIO
2005-03-20
Abstract
A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the Y-parameters and two equivalent noise temperatures, is presented. The method requires only the measured small-signal parameters and 50Ω noise figure, thus avoiding the extraction of the small-signal equivalent circuit. It is particularly suitable for noise characterization of coplanar devices. Good agreement with the results of more conventional methods is demonstrated in a wide frequency range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
