This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess the device performances in both backside and flip-chip configurations; results are shown both for conventional ceramic AIN flip-chip mountings, and for advanced (diamond) heatsinks.
Angelini, A., Camarchia, V., Cappelluti, F., Donati Guerrieri, S., Pirola, M., Bonani, F., et al. (2006). Evaluation of GaN HEMT technology development through nonlinear characterization. In Proceedings of the International symposium on power semiconductor devices and ICs (pp.1-4). IEEE.
Evaluation of GaN HEMT technology development through nonlinear characterization
SERINO, ANTONIO;
2006-06-01
Abstract
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess the device performances in both backside and flip-chip configurations; results are shown both for conventional ceramic AIN flip-chip mountings, and for advanced (diamond) heatsinks.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
