Sfoglia per Autore
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy
1998-01-01 Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Motta, N; Sgarlata, A; Boselli, A; Onida, G; Shkrebtii, A; Del Sole, R
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots
1998-01-01 Motta, N; Sgarlata, A; Calarco, R; Castro Cal, Jnq; Prosposito, P; Balzarotti, A; De Crescenzi, M
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111)
1998-01-01 Contini, G; Di Castro, V; Motta, N; Sgarlata, A
Comparative study of Ag growth on GaAs(001) and (110) surfaces
1998-01-01 Fanfoni, M; Arciprete, F; Patella, F; Boselli, A; Sgarlata, A; Motta, N; Balzarotti, A
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films
1999-01-01 Goletti, C; Sgarlata, A; Motta, N; Chiaradia, P; Paolesse, R; Angelaccio, A; Drago, M; DI NATALE, C; D'Amico, A; Cocco, M; Troitsky, V
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique
1999-01-01 Paolesse, R; DI NATALE, C; Dall'Orto, V; Macagnano, A; Angelaccio, A; Motta, N; Sgarlata, A; Hurst, J; Rezzano, I; Mascini, M; D'Amico, A
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study
1999-01-01 Capellini, G; Motta, N; Sgarlata, A; Calarco, R
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS
2000-01-01 Rosei, F; Motta, N; Sgarlata, A; Capellini, G; Boscherini, F
STM/AFM study of Ge quantum dots grown on Si(111)
2000-01-01 Sgarlata, A; Rosei, F; Fanfoni, M; Motta, N; Balzarotti, A
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy
2000-01-01 Contini, G; Di Castro, V; Angelaccio, A; Motta, N; Sgarlata, A
STM study of sapphyrin films deposited on gold substrates by the Langmuir-Blodgett technique
2000-01-01 Sgarlata, A; Angelaccio, A; Motta, N; Paolesse, R; Di Natale, C; D'Amico, A
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111)
2001-01-01 Arciprete, F; Balzarotti, A; Fanfoni, M; Motta, N; Patella, F; Sgarlata, A
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294)
2001-01-01 Rosei, F; Motta, N; Sgarlata, A; Capellini, G; Boscherini, F
Growth and characterization of Ge nanostructures on Si(111)
2002-01-01 Rosei, F; Motta, N; Sgarlata, A; Balzarotti, A
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays
2002-01-01 Patella, F; Arciprete, F; Placidi, E; Nufris, S; Fanfoni, M; Sgarlata, A; Schiumarini, D; Balzarotti, A
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction
2003-01-01 Castrucci, P; Sgarlata, A; Scarselli, Ma; De Crescenzi, M
Structural study of the InAs quantum-dot nucleation on GaAs(001)
2003-01-01 Patella, F; Nufris, S; Arciprete, F; Fanfoni, M; Placidi, E; Sgarlata, A; Balzarotti, A
Self-ordering of Ge islands on step-bunched Si(111) surfaces
2003-01-01 Sgarlata, A; Szkutnik, Pd; Balzarotti, A; Motta, N; Rosei, F
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth
2003-01-01 Patella, F; Nufris, S; Arciprete, F; Fanfoni, M; Placidi, E; Sgarlata, A; Balzarotti, A
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth
2003-01-01 Patella, F; Nufris, S; Arciprete, F; Fanfoni, M; Placidi, E; Sgarlata, A; Balzarotti, A
Data di pubblicazione | Titolo | Autore(i) | Tipo | File |
---|---|---|---|---|
1-gen-1998 | Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy | Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Motta, N; Sgarlata, A; Boselli, A; Onida, G; Shkrebtii, A; Del Sole, R | Articolo su rivista | |
1-gen-1998 | Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots | Motta, N; Sgarlata, A; Calarco, R; Castro Cal, Jnq; Prosposito, P; Balzarotti, A; De Crescenzi, M | Intervento a convegno | |
1-gen-1998 | Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) | Contini, G; Di Castro, V; Motta, N; Sgarlata, A | Articolo su rivista | |
1-gen-1998 | Comparative study of Ag growth on GaAs(001) and (110) surfaces | Fanfoni, M; Arciprete, F; Patella, F; Boselli, A; Sgarlata, A; Motta, N; Balzarotti, A | Articolo su rivista | |
1-gen-1999 | Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films | Goletti, C; Sgarlata, A; Motta, N; Chiaradia, P; Paolesse, R; Angelaccio, A; Drago, M; DI NATALE, C; D'Amico, A; Cocco, M; Troitsky, V | Articolo su rivista | |
1-gen-1999 | Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique | Paolesse, R; DI NATALE, C; Dall'Orto, V; Macagnano, A; Angelaccio, A; Motta, N; Sgarlata, A; Hurst, J; Rezzano, I; Mascini, M; D'Amico, A | Articolo su rivista | |
1-gen-1999 | Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study | Capellini, G; Motta, N; Sgarlata, A; Calarco, R | Articolo su rivista | |
1-gen-2000 | Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS | Rosei, F; Motta, N; Sgarlata, A; Capellini, G; Boscherini, F | Articolo su rivista | |
1-gen-2000 | STM/AFM study of Ge quantum dots grown on Si(111) | Sgarlata, A; Rosei, F; Fanfoni, M; Motta, N; Balzarotti, A | Articolo su rivista | |
1-gen-2000 | Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy | Contini, G; Di Castro, V; Angelaccio, A; Motta, N; Sgarlata, A | Articolo su rivista | |
1-gen-2000 | STM study of sapphyrin films deposited on gold substrates by the Langmuir-Blodgett technique | Sgarlata, A; Angelaccio, A; Motta, N; Paolesse, R; Di Natale, C; D'Amico, A | Articolo su rivista | |
1-gen-2001 | Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) | Arciprete, F; Balzarotti, A; Fanfoni, M; Motta, N; Patella, F; Sgarlata, A | Contributo in libro | |
1-gen-2001 | Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) | Rosei, F; Motta, N; Sgarlata, A; Capellini, G; Boscherini, F | Articolo su rivista | |
1-gen-2002 | Growth and characterization of Ge nanostructures on Si(111) | Rosei, F; Motta, N; Sgarlata, A; Balzarotti, A | Articolo su rivista | |
1-gen-2002 | Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays | Patella, F; Arciprete, F; Placidi, E; Nufris, S; Fanfoni, M; Sgarlata, A; Schiumarini, D; Balzarotti, A | Articolo su rivista | |
1-gen-2003 | STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction | Castrucci, P; Sgarlata, A; Scarselli, Ma; De Crescenzi, M | Articolo su rivista | |
1-gen-2003 | Structural study of the InAs quantum-dot nucleation on GaAs(001) | Patella, F; Nufris, S; Arciprete, F; Fanfoni, M; Placidi, E; Sgarlata, A; Balzarotti, A | Intervento a convegno | |
1-gen-2003 | Self-ordering of Ge islands on step-bunched Si(111) surfaces | Sgarlata, A; Szkutnik, Pd; Balzarotti, A; Motta, N; Rosei, F | Articolo su rivista | |
1-gen-2003 | Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth | Patella, F; Nufris, S; Arciprete, F; Fanfoni, M; Placidi, E; Sgarlata, A; Balzarotti, A | Articolo su rivista | |
1-gen-2003 | Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth | Patella, F; Nufris, S; Arciprete, F; Fanfoni, M; Placidi, E; Sgarlata, A; Balzarotti, A | Articolo su rivista |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile