RICHTER, WOLFGANG
RICHTER, WOLFGANG
Dipartimento di Fisica
A reflectance anisotropy spectroscopy study of GaSb(100)c(2x6) surfaces prepared by Sb decapping
1996-01-01 Goletti, C; Resch Esser, U; Foeller, J; Esser, N; Richter, W; Brar, B; Kroemer, H
Adsorption structure of cyclopentene on InP(001)(2x4)
2009-01-01 Passmann, R; Favero, P; Schmidt, W; Miotto, R; Braun, W; Richter, W; Kneissl, M; Esser, N; Vogt, P
Adsorption structure of cyclopentene on InP(001)(2×4)
2008-01-01 Passman, R; Favero, P; Schmidt, W; Miotto, R; Braun, W; Richter, W
Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy
2001-01-01 Goletti, C; Arciprete, F; Almaviva, S; Chiaradia, P; Esser, N; Richter, W
Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy
2002-01-01 Emiliani, V; Frisch, A; Goletti, C; Esser, N; Richter, W; Fimland, B
Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy
1999-01-01 Emiliani, V; Shkrebtii, A; Goletti, C; Frisch, A; Fimland, B; Esser, N; Richter, W
Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase
2009-01-01 Cobet, C; Goldhahn, R; Richter, W; Esser, N
Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE
2011-01-01 Prete, P; Buick, B; Speiser, E; Lovergine, N; Richter, W
Large photocurrent generation in multiwall carbon nanotubes
2006-12-18 Castrucci, P; Tombolini, F; Scarselli, Ma; Speiser, E; Del Gobbo, S; Richter, W; DE CRESCENZI, M; Diociaiuti, M; Gatto, E; Venanzi, M
Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment
2010-01-01 Ibrahim, Z; Shkrebtii, A; Lee, M; Teatro, T; Drago, M; Trepk, T; Richter, W
Metal–insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy
2010-01-01 Speiser, E; Chandola, S; Hinrichs, K; Gensch, M; Cobet, C; Wippermann, S; Schmidt, Wg; Bechstedt, F; Richter, W; Fleischer, K; Mcgilp, Jf; Esser, N
Nearly 100 years of Raman scattering
2011-01-01 Richter, W
Optical anisotropies of InP(001) surfaces
1997-01-01 Goletti, C; Esser, N; Resch Esser, U; Wagner, V; Foeller, J; Pristovsek, M; Richter, W
Optical anisotropy of Cs nanostructures on III-V(110) surfaces
2004-01-01 Fleischer, K; Bussetti, G; Goletti, C; Richter, W; Chiaradia, P
Optical anisotropy of cyclopentene terminated GaAs(001) surfaces
2007-01-01 Passmann, R; Kropp, M; Bruhn, T; Fimland, B; Bloom, F; Gossard, A; Richter, W; Esser, N; Vogt, P
Optical characterization of indium-terminated GaAs(001) surfaces
2000-01-01 Goletti, C; Springer, C; Resch Esser, U; Esser, N; Richter, W; Fimland, B
Optical spectra of ZnO in the far UV: first principle calculations and ellipsometric measurements
2010-01-01 Gori, P; Rakel, M; Cobet, C; Richter, W; Esser, N; Hoffmann, A; DEL SOLE, R; Cricenti, A; Pulci, O
Sb-induced (1x1) reconstruction on Si(001)
2003-01-01 Power, J; Pulci, O; Shkrebtii, A; Galata, S; Astropekakis, A; Hinrichs, K; Esser, N; DEL SOLE, R; Richter, W
Single AlxGa1-xAs Nanowires Probed by Raman Spectroscopy
2010-01-01 Buick, B; Paiano, P; Prete, P; Speiser, E; Lovergine, N; Richter, W
Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)
2004-01-01 Pulci, O; Fleischer, K; Pristovsek, M; Tsukamoto, S; DEL SOLE, R; Richter, W
Data di pubblicazione | Titolo | Autore(i) | Tipo | File |
---|---|---|---|---|
1-gen-1996 | A reflectance anisotropy spectroscopy study of GaSb(100)c(2x6) surfaces prepared by Sb decapping | Goletti, C; Resch Esser, U; Foeller, J; Esser, N; Richter, W; Brar, B; Kroemer, H | Intervento a convegno | |
1-gen-2009 | Adsorption structure of cyclopentene on InP(001)(2x4) | Passmann, R; Favero, P; Schmidt, W; Miotto, R; Braun, W; Richter, W; Kneissl, M; Esser, N; Vogt, P | Articolo su rivista | |
1-gen-2008 | Adsorption structure of cyclopentene on InP(001)(2×4) | Passman, R; Favero, P; Schmidt, W; Miotto, R; Braun, W; Richter, W | Articolo su rivista | |
1-gen-2001 | Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy | Goletti, C; Arciprete, F; Almaviva, S; Chiaradia, P; Esser, N; Richter, W | Articolo su rivista | |
1-gen-2002 | Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy | Emiliani, V; Frisch, A; Goletti, C; Esser, N; Richter, W; Fimland, B | Articolo su rivista | |
1-gen-1999 | Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy | Emiliani, V; Shkrebtii, A; Goletti, C; Frisch, A; Fimland, B; Esser, N; Richter, W | Articolo su rivista | |
1-gen-2009 | Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase | Cobet, C; Goldhahn, R; Richter, W; Esser, N | Articolo su rivista | |
1-gen-2011 | Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE | Prete, P; Buick, B; Speiser, E; Lovergine, N; Richter, W | Intervento a convegno | |
18-dic-2006 | Large photocurrent generation in multiwall carbon nanotubes | Castrucci, P; Tombolini, F; Scarselli, Ma; Speiser, E; Del Gobbo, S; Richter, W; DE CRESCENZI, M; Diociaiuti, M; Gatto, E; Venanzi, M | Articolo su rivista | |
1-gen-2010 | Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment | Ibrahim, Z; Shkrebtii, A; Lee, M; Teatro, T; Drago, M; Trepk, T; Richter, W | Intervento a convegno | |
1-gen-2010 | Metal–insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy | Speiser, E; Chandola, S; Hinrichs, K; Gensch, M; Cobet, C; Wippermann, S; Schmidt, Wg; Bechstedt, F; Richter, W; Fleischer, K; Mcgilp, Jf; Esser, N | Articolo su rivista | |
1-gen-2011 | Nearly 100 years of Raman scattering | Richter, W | Intervento a convegno | |
1-gen-1997 | Optical anisotropies of InP(001) surfaces | Goletti, C; Esser, N; Resch Esser, U; Wagner, V; Foeller, J; Pristovsek, M; Richter, W | Articolo su rivista | |
1-gen-2004 | Optical anisotropy of Cs nanostructures on III-V(110) surfaces | Fleischer, K; Bussetti, G; Goletti, C; Richter, W; Chiaradia, P | Articolo su rivista | |
1-gen-2007 | Optical anisotropy of cyclopentene terminated GaAs(001) surfaces | Passmann, R; Kropp, M; Bruhn, T; Fimland, B; Bloom, F; Gossard, A; Richter, W; Esser, N; Vogt, P | Articolo su rivista | |
1-gen-2000 | Optical characterization of indium-terminated GaAs(001) surfaces | Goletti, C; Springer, C; Resch Esser, U; Esser, N; Richter, W; Fimland, B | Articolo su rivista | |
1-gen-2010 | Optical spectra of ZnO in the far UV: first principle calculations and ellipsometric measurements | Gori, P; Rakel, M; Cobet, C; Richter, W; Esser, N; Hoffmann, A; DEL SOLE, R; Cricenti, A; Pulci, O | Articolo su rivista | |
1-gen-2003 | Sb-induced (1x1) reconstruction on Si(001) | Power, J; Pulci, O; Shkrebtii, A; Galata, S; Astropekakis, A; Hinrichs, K; Esser, N; DEL SOLE, R; Richter, W | Articolo su rivista | |
1-gen-2010 | Single AlxGa1-xAs Nanowires Probed by Raman Spectroscopy | Buick, B; Paiano, P; Prete, P; Speiser, E; Lovergine, N; Richter, W | Articolo su rivista | |
1-gen-2004 | Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110) | Pulci, O; Fleischer, K; Pristovsek, M; Tsukamoto, S; DEL SOLE, R; Richter, W | Articolo su rivista |