We present calculated and measured reflectance anisotropy spectra (RAS) in the energy range from 1 to 6 eV of cleaved GaAs(110) surfaces covered with one monolayer of As and Sb in a (1 x 1) pattern. The spectral range and the accuracy of the data were improved and correlated for the first time with ab initio calculations of RAS spectra for the ECLS (epitaxial continued layer structure) and EOTS (epitaxial on top structure) surface models. The theoretical spectra for the two models completely differ and rule out the EOTS for both adsorbates. For Sb/GaAs(110) this finding agrees with the previous experimental and theoretical results reported on the structure. For As on GaAs(110) the ECLS structure was also suggested, but so far no direct proof for this model has been given. In this paper we show how RAS, thanks to its sensitivity to details of the surface structure and ab initio theoretical description, demonstrates its potential to conclusively determine surface structures.

Pulci, O., Fleischer, K., Pristovsek, M., Tsukamoto, S., Del Sole, R., & Richter, W. (2004). Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110). JOURNAL OF PHYSICS. CONDENSED MATTER, 16(39) [10.1088/0953-8984/16/39/011].

Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)

PULCI, OLIVIA;DEL SOLE, RODOLFO;RICHTER, WOLFGANG
2004

Abstract

We present calculated and measured reflectance anisotropy spectra (RAS) in the energy range from 1 to 6 eV of cleaved GaAs(110) surfaces covered with one monolayer of As and Sb in a (1 x 1) pattern. The spectral range and the accuracy of the data were improved and correlated for the first time with ab initio calculations of RAS spectra for the ECLS (epitaxial continued layer structure) and EOTS (epitaxial on top structure) surface models. The theoretical spectra for the two models completely differ and rule out the EOTS for both adsorbates. For Sb/GaAs(110) this finding agrees with the previous experimental and theoretical results reported on the structure. For As on GaAs(110) the ECLS structure was also suggested, but so far no direct proof for this model has been given. In this paper we show how RAS, thanks to its sensitivity to details of the surface structure and ab initio theoretical description, demonstrates its potential to conclusively determine surface structures.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
Antimony; Epitaxial growth; Monolayers; Semiconducting gallium arsenide; Spectroscopic analysis; Structural analysis; Surface structure; Adsorbates; Epitaxial on top structure (EOTS); Reflectance anisotropy spectra (RAS); Reflectance anisotropy spectroscopy; Anisotropy
Pulci, O., Fleischer, K., Pristovsek, M., Tsukamoto, S., Del Sole, R., & Richter, W. (2004). Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110). JOURNAL OF PHYSICS. CONDENSED MATTER, 16(39) [10.1088/0953-8984/16/39/011].
Pulci, O; Fleischer, K; Pristovsek, M; Tsukamoto, S; DEL SOLE, R; Richter, W
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/30691
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