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EnglishThe inner composition, defect content and morphology of AlGaAs nanowires (NWs) grown on (111)B-GaAs by Au-catalyzed MOVPE is reported. The NWs grow tapered with their [111] axis normal to the substrate. The Raman spectra of single AlGaAs NWs were measured in non-resonant conditions with sub-μ-meter spatial resolution, allowing determination of the Al content. NWs consist of GaAs for TG<475°C, but show a two-fold compositional structure for TG >475°C, namely an AlxGa1-xAs core surrounded by an AlyGa1-yAs (y<x) shell, ascribed to the combination of Au-catalyzed (axial) and conventional (sidewall) growth. The cross-sectional shape of AlGaAs NWs changes from triangular (for TG=500÷525°C) to almost hexagonal (for TG=550°C), due to an exchange between and {110} planes as the slowest to grow. The NWs have free-electron concentrations ∼1018 cm-3, due to Si contamination of the Al source.
Prete, P., Buick, B., Speiser, E., Lovergine, N., & Richter, W. (2011). Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE. Paper presented at 2011 MRS Spring Meeting.
| Autori: | |
| Autori: | Prete, P; Buick, B; Speiser, E; Lovergine, N; Richter, W |
| Titolo: | Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE |
| Nome del convegno: | 2011 MRS Spring Meeting |
| Rilevanza: | Rilevanza internazionale |
| Data di pubblicazione: | 2011 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1557/opl.2011.1031 |
| Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
| Lingua: | English |
| Tipologia: | Intervento a convegno |
| Citazione: | Prete, P., Buick, B., Speiser, E., Lovergine, N., & Richter, W. (2011). Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE. Paper presented at 2011 MRS Spring Meeting. |
| Appare nelle tipologie: | 02 - Intervento a convegno |
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