MBE-grown samples capped with a protective Sb layer were used to study clean (100) surfaces in UHV. By thermal desorption of the Sb cap layer GaSb surfaces exhibiting c(2 X 6) reconstruction were prepared, then studied by reflectance anisotropy spectroscopy, low energy electron diffraction and Auger electron spectroscopy. The results of this experimental analysis allowed us to determine for the first time the surface related optical anisotropy of the c(2 X 6) reconstruction of GaSb(100) in the range 1.5-5.5 eV, Reflectance anisotropy spectroscopy features related to optical transitions of surface Sb dimers are identified and discussed. Moreover, the appearance of an optical anisotropy related to the linear electro-optic effect at the E(1) bulk critical point shows the existence of band bending at GaSb decapped surfaces.
Goletti, C., Resch Esser, U., Foeller, J., Esser, N., Richter, W., Brar, B., et al. (1996). A reflectance anisotropy spectroscopy study of GaSb(100)c(2x6) surfaces prepared by Sb decapping. In Surface Science (pp.771-775). AMSTERDAM : ELSEVIER SCIENCE BV [10.1016/0039-6028(95)01226-5].
A reflectance anisotropy spectroscopy study of GaSb(100)c(2x6) surfaces prepared by Sb decapping
GOLETTI, CLAUDIO;RICHTER, WOLFGANG;
1996-01-01
Abstract
MBE-grown samples capped with a protective Sb layer were used to study clean (100) surfaces in UHV. By thermal desorption of the Sb cap layer GaSb surfaces exhibiting c(2 X 6) reconstruction were prepared, then studied by reflectance anisotropy spectroscopy, low energy electron diffraction and Auger electron spectroscopy. The results of this experimental analysis allowed us to determine for the first time the surface related optical anisotropy of the c(2 X 6) reconstruction of GaSb(100) in the range 1.5-5.5 eV, Reflectance anisotropy spectroscopy features related to optical transitions of surface Sb dimers are identified and discussed. Moreover, the appearance of an optical anisotropy related to the linear electro-optic effect at the E(1) bulk critical point shows the existence of band bending at GaSb decapped surfaces.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
