IRIS

MOTTA, NUNZIO

MOTTA, NUNZIO  

Dipartimento di Fisica  

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Risultati 1 - 18 di 18 (tempo di esecuzione: 0.026 secondi).
Data di pubblicazione Titolo Autore(i) Tipo File
1-gen-2014 Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires Persichetti, L; Sgarlata, A; Mori, S; Notarianni, M; Cherubini, V; Fanfoni, M; Motta, N; Balzarotti, A Articolo su rivista
1-gen-2005 Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy Ratto, F; Rosei, F; Locatelli, A; Cherifi, S; Fontana, S; Heun, S; Szkutnik, P; Sgarlata, A; De Crescenzi, M; Motta, N Articolo su rivista
1-gen-2003 Controlling the quantum dot nucleation site Motta, N; Sgarlata, A; Rosei, F; Szkutnik, P; Nufris, S; Scarselli, M; Balzarotti, A Articolo su rivista
1-gen-2017 Diffusion and kinetics in epitaxial graphene growth on SiC Tomellini, M; Gupta, B; Sgarlata, A; Motta, N Contributo in libro
29-set-2004 DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA Motta, N; Sgarlata, A; Iannilli, M; Pecchi, D Brevetti
1-gen-2011 Driving Ge Island Ordering on Nanostructured Si surfaces Sgarlata, A; Persichetti, L; Capasso, A; Fanfoni, M; Motta, N; Balzarotti, A Articolo su rivista
1-gen-2022 Dynamical evolution of Ge quantum dots on Si(111): from island formation to high temperature decay Genesh, N; De Marchi, F; Heun, S; Fontana, S; Belkhou, R; Purandare, R; Motta, N; Sgarlata, A; Fanfoni, M; Macleod, J; Maclean, O; Rosei, F Articolo su rivista
1-gen-2000 Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS Rosei, F; Motta, N; Sgarlata, A; Capellini, G; Boscherini, F Articolo su rivista
1-gen-1995 Gallium Arsenide detectors for underground physics Balzarotti, A; Bernabei, R; Fanfoni, M; Motta, N; Paoluzi, L; Patella, F; Arciprete, F; Belli, P; Di Nicolantonio, W; Landoni, V Contributo in libro
1-gen-2014 Graphene ripples generated by grain boundaries in highly ordered pyrolytic graphite Capasso, A; Placidi, E; Zhan, H; Perfetto, E; Bell, J; Gu, Y; Motta, N Articolo su rivista
1-gen-2019 Group-IV 2D materials beyond graphene on nonmetal substrates: challenges, recent progress, and future perspectives Galbiati, M; Motta, N; De Crescenzi, M; Camilli, L Articolo su rivista
1-gen-2023 High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum Zebardastan, N; Bradford, J; Lipton-Duffin, J; Macleod, J; Ostrikov, K; Tomellini, M; Motta, N Articolo su rivista
1-gen-1999 Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films Goletti, C; Sgarlata, A; Motta, N; Chiaradia, P; Paolesse, R; Angelaccio, A; Drago, M; DI NATALE, C; D'Amico, A; Cocco, M; Troitsky, V Articolo su rivista
1-gen-2012 Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells Capasso, A; Salamandra, L; DI CARLO, A; Bell, J; Motta, N Articolo su rivista
1-gen-2001 Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) Arciprete, F; Balzarotti, A; Fanfoni, M; Motta, N; Patella, F; Sgarlata, A Contributo in libro
1-gen-2000 STM study of sapphyrin films deposited on gold substrates by the Langmuir-Blodgett technique Sgarlata, A; Angelaccio, A; Motta, N; Paolesse, R; Di Natale, C; D'Amico, A Articolo su rivista
1-gen-2000 STM/AFM study of Ge quantum dots grown on Si(111) Sgarlata, A; Rosei, F; Fanfoni, M; Motta, N; Balzarotti, A Articolo su rivista
1-gen-2016 Time evolution of graphene growth on SiC as a function of annealing temperature Zarotti, F; Gupta, B; Iacopi, F; Sgarlata, A; Tomellini, M; Motta, N Articolo su rivista