FANFONI, MASSIMO
FANFONI, MASSIMO
Dipartimento di Fisica
2D Voronoi tessellation generated by lines and belts of dots
2016-01-01 Fanfoni, M; Filabozzi, A; Placidi, E; Patella, F; Balzarotti, A; Arciprete, F
A Highly Emissive Water-Soluble Phosphorus Corrole
2017-01-01 Naitana, Ml; Nardis, S; Pomarico, G; Raggio, M; Caroleo, F; Cicero, Do; Lentini, S; Prodi, L; Genovese, D; Mitta, S; Sgarlata, A; Fanfoni, M; Persichetti, L; Paolesse, R
A study of the pair distribution function of self-organized Ge quantum dots
2008-01-01 Bernardi, M; Sgarlata, A; Fanfoni, M; Balzarotti, A; Motta, N
A synchrotron radiation photoemission study of the oxidation of tin
1994-01-01 De Padova, P; Fanfoni, M; Larciprete, R; Mangiantini, M; Priori, S; Perfetti, P
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
2019-01-01 Persichetti, L; Di Gaspare, L; Fabbri, F; Scaparro, Am; Notargiacomo, A; Sgarlata, A; Fanfoni, M; Miseikis, V; Coletti, C; De Seta, M
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy
2006-01-01 Placidi, E; Hogan, C; Arciprete, F; Fanfoni, M; Patella, F; DEL SOLE, R; Balzarotti, A
Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces
1999-01-01 Volpe, M; Fanfoni, M; Tomellini, M; Sessa, V
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy
2003-01-01 Balzarotti, A; Placidi, E; Arciprete, F; Fanfoni, M; Patella, F
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)
2006-01-01 Patella, F; Arciprete, F; Fanfoni, M; Balzarotti, A; Placidi, E
ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission
1993-01-01 Larciprete, R; Borsella, E; De Padova, P; Fanfoni, M; Mangiantini, M; Perfetti, P
Atomi,Molecole e Solidi: Esercizi risolti
2004-01-01 Balzarotti, A; Cini, M; Fanfoni, M
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE
2005-01-01 Bute, O; Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Cimpoca, G
Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES
1995-01-01 Fanfoni, M; Tomellini, M
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
2014-01-01 Persichetti, L; Sgarlata, A; Mori, S; Notarianni, M; Cherubini, V; Fanfoni, M; Motta, N; Balzarotti, A
Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases
1996-01-01 Fanfoni, M; Fortunato, G
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws
2012-01-01 Tomellini, M; Fanfoni, M
Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation
2003-01-01 Fanfoni, M; Tomellini, M
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality
2011-01-01 Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A
Chiral porphyrin assemblies investigated by a modified reflectance anisotropy spectroscopy spectrometer
2023-04-14 Tomei, I; Bonanni, B; Sgarlata, A; Fanfoni, M; Martini, R; Di Filippo, I; Magna, G; Stefanelli, M; Monti, D; Paolesse, R; Goletti, C
Coarsening effect on island-size scaling: The model case InAs/GaAs(001)
2012-01-01 Fanfoni, M; Arciprete, F; Tirabassi, C; Del Gaudio, D; Filabozzi, A; Balzarotti, A; Patella, F; Placidi, E
| Data di pubblicazione | Titolo | Autore(i) | Tipo | File |
|---|---|---|---|---|
| 1-gen-2016 | 2D Voronoi tessellation generated by lines and belts of dots | Fanfoni, M; Filabozzi, A; Placidi, E; Patella, F; Balzarotti, A; Arciprete, F | Articolo su rivista | |
| 1-gen-2017 | A Highly Emissive Water-Soluble Phosphorus Corrole | Naitana, Ml; Nardis, S; Pomarico, G; Raggio, M; Caroleo, F; Cicero, Do; Lentini, S; Prodi, L; Genovese, D; Mitta, S; Sgarlata, A; Fanfoni, M; Persichetti, L; Paolesse, R | Articolo su rivista | |
| 1-gen-2008 | A study of the pair distribution function of self-organized Ge quantum dots | Bernardi, M; Sgarlata, A; Fanfoni, M; Balzarotti, A; Motta, N | Articolo su rivista | |
| 1-gen-1994 | A synchrotron radiation photoemission study of the oxidation of tin | De Padova, P; Fanfoni, M; Larciprete, R; Mangiantini, M; Priori, S; Perfetti, P | Articolo su rivista | |
| 1-gen-2019 | Abrupt changes in the graphene on Ge(001) system at the onset of surface melting | Persichetti, L; Di Gaspare, L; Fabbri, F; Scaparro, Am; Notargiacomo, A; Sgarlata, A; Fanfoni, M; Miseikis, V; Coletti, C; De Seta, M | Articolo su rivista | |
| 1-gen-2006 | Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy | Placidi, E; Hogan, C; Arciprete, F; Fanfoni, M; Patella, F; DEL SOLE, R; Balzarotti, A | Articolo su rivista | |
| 1-gen-1999 | Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces | Volpe, M; Fanfoni, M; Tomellini, M; Sessa, V | Articolo su rivista | |
| 1-gen-2003 | Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy | Balzarotti, A; Placidi, E; Arciprete, F; Fanfoni, M; Patella, F | Articolo su rivista | |
| 1-gen-2006 | Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) | Patella, F; Arciprete, F; Fanfoni, M; Balzarotti, A; Placidi, E | Articolo su rivista | |
| 1-gen-1993 | ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission | Larciprete, R; Borsella, E; De Padova, P; Fanfoni, M; Mangiantini, M; Perfetti, P | Articolo su rivista | |
| 1-gen-2004 | Atomi,Molecole e Solidi: Esercizi risolti | Balzarotti, A; Cini, M; Fanfoni, M | Contributo in libro | |
| 1-gen-2005 | Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE | Bute, O; Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Cimpoca, G | Intervento a convegno | |
| 1-gen-1995 | Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES | Fanfoni, M; Tomellini, M | Intervento a convegno | |
| 1-gen-2014 | Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires | Persichetti, L; Sgarlata, A; Mori, S; Notarianni, M; Cherubini, V; Fanfoni, M; Motta, N; Balzarotti, A | Articolo su rivista | |
| 1-gen-1996 | Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases | Fanfoni, M; Fortunato, G | Articolo su rivista | |
| 1-gen-2012 | Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws | Tomellini, M; Fanfoni, M | Articolo su rivista | |
| 1-gen-2003 | Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation | Fanfoni, M; Tomellini, M | Articolo su rivista | |
| 1-gen-2011 | Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality | Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A | Articolo su rivista | |
| 14-apr-2023 | Chiral porphyrin assemblies investigated by a modified reflectance anisotropy spectroscopy spectrometer | Tomei, I; Bonanni, B; Sgarlata, A; Fanfoni, M; Martini, R; Di Filippo, I; Magna, G; Stefanelli, M; Monti, D; Paolesse, R; Goletti, C | Articolo su rivista | |
| 1-gen-2012 | Coarsening effect on island-size scaling: The model case InAs/GaAs(001) | Fanfoni, M; Arciprete, F; Tirabassi, C; Del Gaudio, D; Filabozzi, A; Balzarotti, A; Patella, F; Placidi, E | Articolo su rivista |