LONGO, MASSIMO
LONGO, MASSIMO
Dipartimento di Scienze e Tecnologie Chimiche
A Novel Sb2Te3 Polymorph Stable at the Nanoscale
2015-01-01 Rotunno, E; Longo, M; Wiemer, C; Fallica, R; Campi, D; Bernasconi, M; Lupini, Ar; Pennycook, Sj; Lazzarini, L
Admittance spectroscopy of GaAs/InGaP MQW structures
2008-01-01 Gombia, E; Ghezzi, C; Parisini, A; Tarricone, L; Longo, M
Advances in nanowire PCM
2019-01-01 Longo, M
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3
2020-01-01 Longo, E; Mantovan, R; Cecchini, R; Overbeek, Md; Longo, M; Trevisi, G; Lazzarini, L; Tallarida, G; Fanciulli, M; Winter, Ch; Wiemer, C
Applications for social security benefits related to diabetes in the working age in Italy between 2009 and 2019: a nationwide retrospective cohort study
2022-01-01 Aurilio, Mt; Maiorino, Mi; Mennini, Fs; Scappaticcio, L; Longo, M; Nardone, C; Coppeta, L; Gazzillo, S; Migliorini, R; Bellastella, G; Giugliano, D; Esposito, K
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films
2017-01-01 Mantovan, R; Fallica, R; Mokhles Gerami, A; Mølholt, Te; Wiemer, C; Longo, M; Gunnlaugsson, Hp; Johnston, K; Masenda, H; Naidoo, D; Ncube, M; Bharuth-Ram, K; Fanciulli, M; Gislason, Hp; Langouche, G; Ólafsson, S; Weyer, G
Au-catalyzed self assembly of GeTe nanowires by MOCVD
2011-01-01 Longo, M; Wiemer, C; Salicio, O; Fanciulli, M; Lazzarini, L; Rotunno, E
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD
2013-01-01 Longo, M; Stoycheva, T; Fallica, R; Wiemer, C; Lazzarini, L; Rotunno, E
Chemical vapor deposition of chalcogenide materials for phase-change memories
2008-01-01 Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Longo, M; Pirovano, A; Siegel, J; Gawelda, W; Rushworth, S; Giesen, C
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
2019-01-01 Longo, E; Wiemer, C; Cecchini, R; Longo, M; Lamperti, A; Khanas, A; Zenkevich, A; Fanciulli, M; Mantovan, R
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
2003-01-01 Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Carbognani, A; Bocchi, C; Gombia, E
Crystal structure assessment of Ge-Sb-Te phase change nanowires
2013-01-01 Rotunno, E; Lazzarini, L; Longo, M; Grillo, V
Deep levels controlling the electrical properties of Fe-implanted GaInPGaAs
2007-01-01 Fraboni, B; Piana, E; Cesca, T; Gasparotto, A; Longo, M; Jakomin, R; Tarricone, L
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM
2012-01-01 Lazzarini, L; Rotunno, E; Grillo, V; Longo, M
Determination of the valence band offset of MOVPE-grown In0.48 Ga0.52 P/GaAs multiple quantum wells by admittance spectroscopy
2008-01-01 Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Gombia, E; Longo, M
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
2013-01-01 Fallica, R; Varesi, E; Fumagalli, L; Spadoni, S; Longo, M; Wiemer, C
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films
2021-01-01 Rimoldi, M; Cecchini, R; Wiemer, C; Longo, E; Cecchi, S; Mantovan, R; Longo, M
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
2004-01-01 Begotti, M; Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Bocchi, C; Germini, F; Lazzarini, L; Nasi, L; Geddo, M
Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells
2000-01-01 Traetta, G; Passaseo, A; Longo, M; Cannoletta, D; Cingolani, R; Lomascolo, M; Bonfiglio, A; Carlo, Ad; Sala, Fd; Lugli, P; Botchkarev, A; Morko?, H
Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation
2007-01-01 Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, L; Longo, M
| Data di pubblicazione | Titolo | Autore(i) | Tipo | File |
|---|---|---|---|---|
| 1-gen-2015 | A Novel Sb2Te3 Polymorph Stable at the Nanoscale | Rotunno, E; Longo, M; Wiemer, C; Fallica, R; Campi, D; Bernasconi, M; Lupini, Ar; Pennycook, Sj; Lazzarini, L | Articolo su rivista | |
| 1-gen-2008 | Admittance spectroscopy of GaAs/InGaP MQW structures | Gombia, E; Ghezzi, C; Parisini, A; Tarricone, L; Longo, M | Articolo su rivista | |
| 1-gen-2019 | Advances in nanowire PCM | Longo, M | Contributo in libro | |
| 1-gen-2020 | ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 | Longo, E; Mantovan, R; Cecchini, R; Overbeek, Md; Longo, M; Trevisi, G; Lazzarini, L; Tallarida, G; Fanciulli, M; Winter, Ch; Wiemer, C | Articolo su rivista | |
| 1-gen-2022 | Applications for social security benefits related to diabetes in the working age in Italy between 2009 and 2019: a nationwide retrospective cohort study | Aurilio, Mt; Maiorino, Mi; Mennini, Fs; Scappaticcio, L; Longo, M; Nardone, C; Coppeta, L; Gazzillo, S; Migliorini, R; Bellastella, G; Giugliano, D; Esposito, K | Articolo su rivista | |
| 1-gen-2017 | Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films | Mantovan, R; Fallica, R; Mokhles Gerami, A; Mølholt, Te; Wiemer, C; Longo, M; Gunnlaugsson, Hp; Johnston, K; Masenda, H; Naidoo, D; Ncube, M; Bharuth-Ram, K; Fanciulli, M; Gislason, Hp; Langouche, G; Ólafsson, S; Weyer, G | Articolo su rivista | |
| 1-gen-2011 | Au-catalyzed self assembly of GeTe nanowires by MOCVD | Longo, M; Wiemer, C; Salicio, O; Fanciulli, M; Lazzarini, L; Rotunno, E | Articolo su rivista | |
| 1-gen-2013 | Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD | Longo, M; Stoycheva, T; Fallica, R; Wiemer, C; Lazzarini, L; Rotunno, E | Articolo su rivista | |
| 1-gen-2008 | Chemical vapor deposition of chalcogenide materials for phase-change memories | Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Longo, M; Pirovano, A; Siegel, J; Gawelda, W; Rushworth, S; Giesen, C | Articolo su rivista | |
| 1-gen-2019 | Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface | Longo, E; Wiemer, C; Cecchini, R; Longo, M; Lamperti, A; Khanas, A; Zenkevich, A; Fanciulli, M; Mantovan, R | Articolo su rivista | |
| 1-gen-2003 | Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs | Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Carbognani, A; Bocchi, C; Gombia, E | Articolo su rivista | |
| 1-gen-2013 | Crystal structure assessment of Ge-Sb-Te phase change nanowires | Rotunno, E; Lazzarini, L; Longo, M; Grillo, V | Articolo su rivista | |
| 1-gen-2007 | Deep levels controlling the electrical properties of Fe-implanted GaInPGaAs | Fraboni, B; Piana, E; Cesca, T; Gasparotto, A; Longo, M; Jakomin, R; Tarricone, L | Articolo su rivista | |
| 1-gen-2012 | Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM | Lazzarini, L; Rotunno, E; Grillo, V; Longo, M | Intervento a convegno | |
| 1-gen-2008 | Determination of the valence band offset of MOVPE-grown In0.48 Ga0.52 P/GaAs multiple quantum wells by admittance spectroscopy | Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Gombia, E; Longo, M | Articolo su rivista | |
| 1-gen-2013 | Effect of nitrogen doping on the thermal conductivity of GeTe thin films | Fallica, R; Varesi, E; Fumagalli, L; Spadoni, S; Longo, M; Wiemer, C | Articolo su rivista | |
| 1-gen-2021 | Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films | Rimoldi, M; Cecchini, R; Wiemer, C; Longo, E; Cecchi, S; Mantovan, R; Longo, M | Articolo su rivista | |
| 1-gen-2004 | Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources | Begotti, M; Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Bocchi, C; Germini, F; Lazzarini, L; Nasi, L; Geddo, M | Articolo su rivista | |
| 1-gen-2000 | Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells | Traetta, G; Passaseo, A; Longo, M; Cannoletta, D; Cingolani, R; Lomascolo, M; Bonfiglio, A; Carlo, Ad; Sala, Fd; Lugli, P; Botchkarev, A; Morko?, H | Articolo su rivista | |
| 1-gen-2007 | Electrical activation of fe impurities introduced in III-V semiconductors by high temperature ion implantation | Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, L; Longo, M | Intervento a convegno |