SACCONI, FABIO ENRICO
 Distribuzione geografica
Continente #
NA - Nord America 5.865
EU - Europa 324
AS - Asia 197
AF - Africa 5
SA - Sud America 2
Totale 6.393
Nazione #
US - Stati Uniti d'America 5.865
CN - Cina 91
UA - Ucraina 87
SG - Singapore 72
IE - Irlanda 49
DE - Germania 44
IT - Italia 44
SE - Svezia 35
GB - Regno Unito 21
KR - Corea 18
FI - Finlandia 17
FR - Francia 12
JP - Giappone 8
RU - Federazione Russa 5
TZ - Tanzania 5
HK - Hong Kong 3
CH - Svizzera 2
CZ - Repubblica Ceca 2
IN - India 2
NL - Olanda 2
TW - Taiwan 2
AL - Albania 1
AT - Austria 1
BR - Brasile 1
CL - Cile 1
MD - Moldavia 1
MN - Mongolia 1
PT - Portogallo 1
Totale 6.393
Città #
Woodbridge 1.825
Wilmington 1.651
Houston 1.433
Chandler 162
Fairfield 137
Jacksonville 80
Ann Arbor 77
Seattle 71
Singapore 56
Ashburn 53
Cambridge 51
Dublin 49
Medford 37
Dearborn 34
New York 30
Beijing 29
Zhengzhou 24
Falls Church 21
Lawrence 18
Menlo Park 16
Rome 16
San Diego 10
Mülheim 8
Milan 7
Santa Clara 7
Los Angeles 6
Hefei 5
Kunming 5
Nanjing 5
Verona 4
Guangzhou 3
London 3
Baotou 2
Brno 2
Hong Kong 2
Hsinchu 2
Nanchang 2
Redwood City 2
San Mateo 2
Seoul 2
University Park 2
Wuhan 2
Berlin 1
Boardman 1
Central 1
Chengdu 1
Chisinau 1
Chiswick 1
Eden Prairie 1
Fuzhou 1
Hebei 1
Helsinki 1
Hounslow 1
Jiaxing 1
Jinan 1
Lausanne 1
Lisbon 1
Moscow 1
Mountain View 1
Munich 1
Ningbo 1
Norwalk 1
Oklahoma City 1
Palo Alto 1
Phoenix 1
Provo 1
Pune 1
Riano 1
San Francisco 1
Shanghai 1
Shenyang 1
Southwark 1
São Paulo 1
Ulaanbaatar 1
Vienna 1
Xian 1
Zagarolo 1
Ürümqi 1
Totale 5.989
Nome #
Atomistic simulations of InGaN/GaN random alloy quantum well LEDs 415
Multiscale atomistic simulations of high-k mosfets 408
Strain evolution in GaN nanowires: From free-surface objects to coalesced templates 403
Atomistic simulation of InGaN/GaN quantum disk LEDs 398
Electronic and transport properties of GaN/ALGaN quantum dot based p-i-n diodes 396
Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties 396
The multiscale paradigm in electronic device simulation 395
Coupling atomistic and continuous media models for electronic device simulation 394
TiberCAD: the new multiscale simulator for electronic and optoelectronic devices 385
Full-Band Tunneling in High-κ Oxide MOS Structures 382
Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs 373
Electronic and transport properties of gan/algan quantum dot-based p-i-n diodes 371
A parametric study of InGaN/GaN nanorod core-shell LEDs 370
Optoelectronic properties of nanocolumn InGaN/GaN LEDs 353
New multiscale simulator for electronics and optoelectronics devices 343
TIBERCAD: A new multiscale simulator for electron and optoelectronic devices 262
Fibro-adipogenic progenitors of dystrophic mice are insensitive to NOTCH regulation of adipogenesis 191
Myo-REG: A portal for signaling interactions in muscle regeneration 185
Totale 6.420
Categoria #
all - tutte 11.244
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.244


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.523 0 0 119 153 148 167 161 190 168 153 124 140
2020/20211.021 119 135 113 126 114 103 131 97 28 10 39 6
2021/2022220 3 24 4 20 6 8 48 7 8 30 7 55
2022/2023290 19 36 2 62 17 68 17 23 24 1 15 6
2023/202495 15 6 4 1 7 31 0 9 3 3 1 15
2024/2025102 21 50 31 0 0 0 0 0 0 0 0 0
Totale 6.420