In this paper, we present simulation results on the optical and transport properties of InGaN/GaN core-shell nanorod light-emitting diodes. The influence of contact position, surface recombination, and doping configuration on internal quantum efficiency is examined. The qualitative behavior when adding an electron blocking layer and the dependence on In content have been studied.

AUF DER MAUR, M., Sacconi, F.e., DI CARLO, A. (2013). A parametric study of InGaN/GaN nanorod core-shell LEDs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(1), 171-177 [10.1109/TED.2012.2226037].

A parametric study of InGaN/GaN nanorod core-shell LEDs

AUF DER MAUR, MATTHIAS;SACCONI, FABIO ENRICO;DI CARLO, ALDO
2013-01-01

Abstract

In this paper, we present simulation results on the optical and transport properties of InGaN/GaN core-shell nanorod light-emitting diodes. The influence of contact position, surface recombination, and doping configuration on internal quantum efficiency is examined. The qualitative behavior when adding an electron blocking layer and the dependence on In content have been studied.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
English
AUF DER MAUR, M., Sacconi, F.e., DI CARLO, A. (2013). A parametric study of InGaN/GaN nanorod core-shell LEDs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(1), 171-177 [10.1109/TED.2012.2226037].
AUF DER MAUR, M; Sacconi, Fe; DI CARLO, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/95134
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