Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence, and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.

Hugues, M., Shields, P., Sacconi, F.e., Mexis, M., AUF DER MAUR, M., Cooke, M., et al. (2013). Strain evolution in GaN nanowires: From free-surface objects to coalesced templates. JOURNAL OF APPLIED PHYSICS, 114(8) [10.1063/1.4818962].

Strain evolution in GaN nanowires: From free-surface objects to coalesced templates

SACCONI, FABIO ENRICO;AUF DER MAUR, MATTHIAS;DI CARLO, ALDO;
2013-01-01

Abstract

Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence, and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
English
Article n. 084307
Hugues, M., Shields, P., Sacconi, F.e., Mexis, M., AUF DER MAUR, M., Cooke, M., et al. (2013). Strain evolution in GaN nanowires: From free-surface objects to coalesced templates. JOURNAL OF APPLIED PHYSICS, 114(8) [10.1063/1.4818962].
Hugues, M; Shields, P; Sacconi, Fe; Mexis, M; AUF DER MAUR, M; Cooke, M; Dineen, M; DI CARLO, A; Allsopp, D; Zúñiga Pérez, J
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/95140
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